CH519249A - Verfahren zum Herstellen von diffundierten Halbleiterbauelementen unter Verwendung von festen Dotierstoffquellen - Google Patents

Verfahren zum Herstellen von diffundierten Halbleiterbauelementen unter Verwendung von festen Dotierstoffquellen

Info

Publication number
CH519249A
CH519249A CH158671A CH158671A CH519249A CH 519249 A CH519249 A CH 519249A CH 158671 A CH158671 A CH 158671A CH 158671 A CH158671 A CH 158671A CH 519249 A CH519249 A CH 519249A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor components
dopant sources
solid dopant
diffused semiconductor
Prior art date
Application number
CH158671A
Other languages
English (en)
Inventor
Rosenberger Georg
Heinrich Dr Soehlbrand
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH519249A publication Critical patent/CH519249A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
CH158671A 1970-02-19 1971-02-03 Verfahren zum Herstellen von diffundierten Halbleiterbauelementen unter Verwendung von festen Dotierstoffquellen CH519249A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007752 DE2007752B2 (de) 1970-02-19 1970-02-19 Verfahren zum Herstellen von dotiertem Halbleitermaterial

Publications (1)

Publication Number Publication Date
CH519249A true CH519249A (de) 1972-02-15

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
CH158671A CH519249A (de) 1970-02-19 1971-02-03 Verfahren zum Herstellen von diffundierten Halbleiterbauelementen unter Verwendung von festen Dotierstoffquellen

Country Status (8)

Country Link
JP (1) JPS5338597B1 (de)
AT (1) AT338335B (de)
CH (1) CH519249A (de)
DE (1) DE2007752B2 (de)
FR (1) FR2080610B1 (de)
GB (1) GB1289432A (de)
NL (1) NL7102176A (de)
SE (1) SE366227B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4013929A1 (de) * 1989-05-02 1990-11-08 Toshiba Kawasaki Kk Verfahren zum herstellen eines halbleiterbauelements

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (de) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Verfahren zur Dotierung von Halbleitersilicium
EP0104412B1 (de) * 1982-09-23 1988-01-07 Allied Corporation Polymeres Bor und Stickstoff enthaltendes Dotiermaterial
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
JPS4822536B1 (de) * 1969-03-20 1973-07-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4013929A1 (de) * 1989-05-02 1990-11-08 Toshiba Kawasaki Kk Verfahren zum herstellen eines halbleiterbauelements

Also Published As

Publication number Publication date
GB1289432A (de) 1972-09-20
FR2080610B1 (de) 1976-04-16
ATA82571A (de) 1976-12-15
FR2080610A1 (de) 1971-11-19
AT338335B (de) 1977-08-25
DE2007752A1 (de) 1971-08-26
JPS5338597B1 (de) 1978-10-16
SE366227B (de) 1974-04-22
DE2007752C3 (de) 1979-04-05
NL7102176A (de) 1971-08-23
DE2007752B2 (de) 1978-07-27

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Legal Events

Date Code Title Description
PL Patent ceased