SE366227B - - Google Patents
Info
- Publication number
- SE366227B SE366227B SE216671A SE216671A SE366227B SE 366227 B SE366227 B SE 366227B SE 216671 A SE216671 A SE 216671A SE 216671 A SE216671 A SE 216671A SE 366227 B SE366227 B SE 366227B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702007752 DE2007752B2 (de) | 1970-02-19 | 1970-02-19 | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
SE366227B true SE366227B (de) | 1974-04-22 |
Family
ID=5762769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE216671A SE366227B (de) | 1970-02-19 | 1971-02-19 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5338597B1 (de) |
AT (1) | AT338335B (de) |
CH (1) | CH519249A (de) |
DE (1) | DE2007752B2 (de) |
FR (1) | FR2080610B1 (de) |
GB (1) | GB1289432A (de) |
NL (1) | NL7102176A (de) |
SE (1) | SE366227B (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2262021C2 (de) * | 1972-12-19 | 1982-12-30 | Degussa Ag, 6000 Frankfurt | Verfahren zur Dotierung von Halbleitersilicium |
DE3375253D1 (de) * | 1982-09-23 | 1988-02-11 | Allied Corp | Polymeric boron-nitrogen dopant |
JPH01135017A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
DE4013929C2 (de) * | 1989-05-02 | 1995-12-07 | Toshiba Kawasaki Kk | Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
US3355291A (en) * | 1963-10-08 | 1967-11-28 | Texas Instruments Inc | Application of glass to semiconductor devices |
US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
JPS4822536B1 (de) * | 1969-03-20 | 1973-07-06 |
-
1970
- 1970-02-19 DE DE19702007752 patent/DE2007752B2/de active Granted
-
1971
- 1971-02-01 AT AT82571A patent/AT338335B/de not_active IP Right Cessation
- 1971-02-03 CH CH158671A patent/CH519249A/de not_active IP Right Cessation
- 1971-02-16 FR FR7105142A patent/FR2080610B1/fr not_active Expired
- 1971-02-18 NL NL7102176A patent/NL7102176A/xx unknown
- 1971-02-19 JP JP790471A patent/JPS5338597B1/ja active Pending
- 1971-02-19 SE SE216671A patent/SE366227B/xx unknown
- 1971-04-19 GB GB1289432D patent/GB1289432A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1289432A (de) | 1972-09-20 |
DE2007752B2 (de) | 1978-07-27 |
NL7102176A (de) | 1971-08-23 |
AT338335B (de) | 1977-08-25 |
DE2007752C3 (de) | 1979-04-05 |
DE2007752A1 (de) | 1971-08-26 |
JPS5338597B1 (de) | 1978-10-16 |
CH519249A (de) | 1972-02-15 |
ATA82571A (de) | 1976-12-15 |
FR2080610A1 (de) | 1971-11-19 |
FR2080610B1 (de) | 1976-04-16 |