GB1289432A - - Google Patents
Info
- Publication number
- GB1289432A GB1289432A GB1289432DA GB1289432A GB 1289432 A GB1289432 A GB 1289432A GB 1289432D A GB1289432D A GB 1289432DA GB 1289432 A GB1289432 A GB 1289432A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lacquer
- oxide
- dopant
- mixture
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004922 lacquer Substances 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 3
- 239000012876 carrier material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 2
- 239000000020 Nitrocellulose Substances 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920001220 nitrocellulos Polymers 0.000 abstract 1
- 239000000075 oxide glass Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702007752 DE2007752B2 (de) | 1970-02-19 | 1970-02-19 | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1289432A true GB1289432A (de) | 1972-09-20 |
Family
ID=5762769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1289432D Expired GB1289432A (de) | 1970-02-19 | 1971-04-19 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5338597B1 (de) |
| AT (1) | AT338335B (de) |
| CH (1) | CH519249A (de) |
| DE (1) | DE2007752B2 (de) |
| FR (1) | FR2080610B1 (de) |
| GB (1) | GB1289432A (de) |
| NL (1) | NL7102176A (de) |
| SE (1) | SE366227B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2262021C2 (de) * | 1972-12-19 | 1982-12-30 | Degussa Ag, 6000 Frankfurt | Verfahren zur Dotierung von Halbleitersilicium |
| DE3375253D1 (de) * | 1982-09-23 | 1988-02-11 | Allied Corp | Polymeric boron-nitrogen dopant |
| JPH01135017A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE4013929C2 (de) * | 1989-05-02 | 1995-12-07 | Toshiba Kawasaki Kk | Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
| US3355291A (en) * | 1963-10-08 | 1967-11-28 | Texas Instruments Inc | Application of glass to semiconductor devices |
| US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
| JPS4822536B1 (de) * | 1969-03-20 | 1973-07-06 |
-
1970
- 1970-02-19 DE DE19702007752 patent/DE2007752B2/de active Granted
-
1971
- 1971-02-01 AT AT82571A patent/AT338335B/de not_active IP Right Cessation
- 1971-02-03 CH CH158671A patent/CH519249A/de not_active IP Right Cessation
- 1971-02-16 FR FR7105142A patent/FR2080610B1/fr not_active Expired
- 1971-02-18 NL NL7102176A patent/NL7102176A/xx unknown
- 1971-02-19 JP JP790471A patent/JPS5338597B1/ja active Pending
- 1971-02-19 SE SE216671A patent/SE366227B/xx unknown
- 1971-04-19 GB GB1289432D patent/GB1289432A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT338335B (de) | 1977-08-25 |
| JPS5338597B1 (de) | 1978-10-16 |
| DE2007752A1 (de) | 1971-08-26 |
| FR2080610A1 (de) | 1971-11-19 |
| DE2007752C3 (de) | 1979-04-05 |
| CH519249A (de) | 1972-02-15 |
| ATA82571A (de) | 1976-12-15 |
| SE366227B (de) | 1974-04-22 |
| FR2080610B1 (de) | 1976-04-16 |
| DE2007752B2 (de) | 1978-07-27 |
| NL7102176A (de) | 1971-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |