CH501998A - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
CH501998A
CH501998A CH930369A CH930369A CH501998A CH 501998 A CH501998 A CH 501998A CH 930369 A CH930369 A CH 930369A CH 930369 A CH930369 A CH 930369A CH 501998 A CH501998 A CH 501998A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH930369A
Other languages
German (de)
English (en)
Inventor
Kerr George
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH501998A publication Critical patent/CH501998A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • H10D84/125BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH930369A 1968-06-21 1969-06-18 Halbleitervorrichtung CH501998A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6808722.A NL164703C (nl) 1968-06-21 1968-06-21 Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.

Publications (1)

Publication Number Publication Date
CH501998A true CH501998A (de) 1971-01-15

Family

ID=19803953

Family Applications (1)

Application Number Title Priority Date Filing Date
CH930369A CH501998A (de) 1968-06-21 1969-06-18 Halbleitervorrichtung

Country Status (8)

Country Link
JP (1) JPS5513587B1 (en, 2012)
AT (1) AT320025B (en, 2012)
BR (1) BR6909999D0 (en, 2012)
CH (1) CH501998A (en, 2012)
FR (1) FR2011431A1 (en, 2012)
GB (2) GB1278442A (en, 2012)
NL (1) NL164703C (en, 2012)
SE (1) SE342113B (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002117A (en, 2012) * 1970-02-14 1971-08-17
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
NL8403111A (nl) * 1984-10-12 1986-05-01 Philips Nv Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
JPH0320953U (en, 2012) * 1989-07-11 1991-02-28
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9331642B2 (en) 2014-06-27 2016-05-03 Freescale Semiconductor, Inc. Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (en, 2012) * 1962-10-04
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
FR1475075A (fr) * 1965-03-08 1967-03-31 Int Standard Electric Corp Dispositif semi-conducteur à haute puissance
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly

Also Published As

Publication number Publication date
GB1278442A (en) 1972-06-21
NL6808722A (en, 2012) 1969-12-23
GB1278443A (en) 1972-06-21
JPS5513587B1 (en, 2012) 1980-04-10
AT320025B (de) 1975-01-27
SE342113B (en, 2012) 1972-01-24
NL164703B (nl) 1980-08-15
BR6909999D0 (pt) 1973-01-02
NL164703C (nl) 1981-01-15
DE1802899A1 (de) 1970-02-26
FR2011431A1 (en, 2012) 1970-02-27
DE1802899B2 (de) 1975-04-24

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Legal Events

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PL Patent ceased