FR2011431A1 - - Google Patents

Info

Publication number
FR2011431A1
FR2011431A1 FR6920810A FR6920810A FR2011431A1 FR 2011431 A1 FR2011431 A1 FR 2011431A1 FR 6920810 A FR6920810 A FR 6920810A FR 6920810 A FR6920810 A FR 6920810A FR 2011431 A1 FR2011431 A1 FR 2011431A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR6920810A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2011431A1 publication Critical patent/FR2011431A1/fr
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • H10D84/125BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR6920810A 1968-06-21 1969-06-20 Pending FR2011431A1 (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6808722.A NL164703C (nl) 1968-06-21 1968-06-21 Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.

Publications (1)

Publication Number Publication Date
FR2011431A1 true FR2011431A1 (en, 2012) 1970-02-27

Family

ID=19803953

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6920810A Pending FR2011431A1 (en, 2012) 1968-06-21 1969-06-20

Country Status (8)

Country Link
JP (1) JPS5513587B1 (en, 2012)
AT (1) AT320025B (en, 2012)
BR (1) BR6909999D0 (en, 2012)
CH (1) CH501998A (en, 2012)
FR (1) FR2011431A1 (en, 2012)
GB (2) GB1278442A (en, 2012)
NL (1) NL164703C (en, 2012)
SE (1) SE342113B (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071161A3 (en) * 1981-07-28 1983-11-16 Fujitsu Limited A transistor having the mesh emitter structure
EP0141075A1 (de) * 1983-08-12 1985-05-15 Siemens Aktiengesellschaft Leistungstransistor
FR2615326A1 (fr) * 1987-05-15 1988-11-18 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
EP0439163A3 (en) * 1990-01-25 1992-03-04 Kabushiki Kaisha Toshiba High-frequency semiconductor device
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002117A (en, 2012) * 1970-02-14 1971-08-17
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
NL8403111A (nl) * 1984-10-12 1986-05-01 Philips Nv Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
JPH0320953U (en, 2012) * 1989-07-11 1991-02-28
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9331642B2 (en) 2014-06-27 2016-05-03 Freescale Semiconductor, Inc. Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1358189A (fr) * 1962-10-04 1964-04-10 Intermetall Dispositif de branchement de l'émetteur d'un transistor de puissance et transistor pourvu d'un émetteur conforme ou similaire au précédent
FR1475075A (fr) * 1965-03-08 1967-03-31 Int Standard Electric Corp Dispositif semi-conducteur à haute puissance
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
GB1109211A (en) * 1965-03-08 1968-04-10 Int Standard Electric Corp High power transistor assembly

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1358189A (fr) * 1962-10-04 1964-04-10 Intermetall Dispositif de branchement de l'émetteur d'un transistor de puissance et transistor pourvu d'un émetteur conforme ou similaire au précédent
GB1044469A (en) * 1962-10-04 1966-09-28 Intermetall Ges Fur Metallurg Power transistor
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
FR1475075A (fr) * 1965-03-08 1967-03-31 Int Standard Electric Corp Dispositif semi-conducteur à haute puissance
GB1109211A (en) * 1965-03-08 1968-04-10 Int Standard Electric Corp High power transistor assembly

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071161A3 (en) * 1981-07-28 1983-11-16 Fujitsu Limited A transistor having the mesh emitter structure
EP0141075A1 (de) * 1983-08-12 1985-05-15 Siemens Aktiengesellschaft Leistungstransistor
FR2615326A1 (fr) * 1987-05-15 1988-11-18 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5053847A (en) * 1987-05-15 1991-10-01 Fuji Electric Co., Ltd. Semiconductor device
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
EP0439163A3 (en) * 1990-01-25 1992-03-04 Kabushiki Kaisha Toshiba High-frequency semiconductor device

Also Published As

Publication number Publication date
GB1278442A (en) 1972-06-21
NL6808722A (en, 2012) 1969-12-23
GB1278443A (en) 1972-06-21
JPS5513587B1 (en, 2012) 1980-04-10
AT320025B (de) 1975-01-27
SE342113B (en, 2012) 1972-01-24
CH501998A (de) 1971-01-15
NL164703B (nl) 1980-08-15
BR6909999D0 (pt) 1973-01-02
NL164703C (nl) 1981-01-15
DE1802899A1 (de) 1970-02-26
DE1802899B2 (de) 1975-04-24

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