CH447126A - Verfahren zur Herstellung einkristalliner, homogen bordotierter, aus Halbleitermaterial, insbesondere aus Silicium oder Germanium, bestehender Aufwachsschichten auf einkristallinen Grundkörpern - Google Patents

Verfahren zur Herstellung einkristalliner, homogen bordotierter, aus Halbleitermaterial, insbesondere aus Silicium oder Germanium, bestehender Aufwachsschichten auf einkristallinen Grundkörpern

Info

Publication number
CH447126A
CH447126A CH888965A CH888965A CH447126A CH 447126 A CH447126 A CH 447126A CH 888965 A CH888965 A CH 888965A CH 888965 A CH888965 A CH 888965A CH 447126 A CH447126 A CH 447126A
Authority
CH
Switzerland
Prior art keywords
monocrystalline
homogeneously
germanium
doped
boron
Prior art date
Application number
CH888965A
Other languages
German (de)
English (en)
Inventor
Seiter Hartmut Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH447126A publication Critical patent/CH447126A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CH888965A 1964-06-26 1965-06-24 Verfahren zur Herstellung einkristalliner, homogen bordotierter, aus Halbleitermaterial, insbesondere aus Silicium oder Germanium, bestehender Aufwachsschichten auf einkristallinen Grundkörpern CH447126A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES91724A DE1245335B (de) 1964-06-26 1964-06-26 Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern

Publications (1)

Publication Number Publication Date
CH447126A true CH447126A (de) 1967-11-30

Family

ID=7516699

Family Applications (1)

Application Number Title Priority Date Filing Date
CH888965A CH447126A (de) 1964-06-26 1965-06-24 Verfahren zur Herstellung einkristalliner, homogen bordotierter, aus Halbleitermaterial, insbesondere aus Silicium oder Germanium, bestehender Aufwachsschichten auf einkristallinen Grundkörpern

Country Status (5)

Country Link
US (1) US3488712A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH447126A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1245335B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1035810A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6507006A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874920A (en) * 1973-06-28 1975-04-01 Ibm Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity
US5891242A (en) * 1997-06-13 1999-04-06 Seh America, Inc. Apparatus and method for determining an epitaxial layer thickness and transition width

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
AT199701B (de) * 1953-10-26 1958-09-25 Siemens Ag Verfahren zur Herstellung reinster kristalliner Stoffe, vorzugsweise Leiter oder Halbleiter
DE1147567B (de) * 1960-01-15 1963-04-25 Siemens Ag Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium
DE1155098B (de) * 1960-06-10 1963-10-03 Siemens Ag Verfahren zur Gewinnung von reinstem Silicium
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
US3321278A (en) * 1961-12-11 1967-05-23 Bell Telephone Labor Inc Process for controlling gas phase composition
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
US3318814A (en) * 1962-07-24 1967-05-09 Siemens Ag Doped semiconductor process and products produced thereby
DE1224279B (de) * 1964-01-03 1966-09-08 Siemens Ag Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial

Also Published As

Publication number Publication date
NL6507006A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-12-27
US3488712A (en) 1970-01-06
GB1035810A (en) 1966-07-13
DE1245335B (de) 1967-07-27

Similar Documents

Publication Publication Date Title
CH421913A (de) Verfahren zur Herstellung einkristalliner Aufwachsschichten auf einkristallinen Grundkörpern aus Halbleitermaterial
CH409887A (de) Verfahren zur Herstellung von Halbleitervorrichtungen aus monokristallinen Halbleiterelementen
CH458747A (de) Verfahren zur Herstellung geformter Gebilde
AT310253B (de) Verfahren zur Herstellung von Halbleitern, insbesondere Halbleiterdioden
CH372760A (de) Halbleitervorrichtung mit einem halbleitenden Körper aus Siliciumcarbid und Verfahren zur Herstellung derselben
AT305376B (de) Verfahren zur Herstellung von Hohlkörpern aus Halbleitermaterial
CH528301A (de) Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise aus Silicium oder Germanium
AT281122B (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
AT266219B (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH443670A (de) Kunststoffmasse und Verfahren zur Herstellung derselben
CH485595A (de) Verfahren zur Herstellung von kubischem Bornitrid
CH447126A (de) Verfahren zur Herstellung einkristalliner, homogen bordotierter, aus Halbleitermaterial, insbesondere aus Silicium oder Germanium, bestehender Aufwachsschichten auf einkristallinen Grundkörpern
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH404966A (de) Verfahren zur Herstellung von Einkristallen, insbesondere aus Halbleitermaterial
CH500147A (de) Verfahren zur gleichzeitigen Herstellung von Alkoholen und Äthern durch Direkthydratisierung von Olefinen
CH428675A (de) Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium
CH461639A (de) Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes
CH519788A (de) Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium
CH544576A (de) Verfahren und Vorrichtung zur Herstellung von epitaxialen III-V-Halbleiterschichten des Galliums
CH439743A (de) Verfahren zur Herstellung von Formgebilden aus Polyglykolid
AT251649B (de) Verfahren zur Herstellung von Halbleiteranordnungen, wie Transistoren und Dioden
CH414570A (de) Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium
CH420389A (de) Verfahren zur Herstellung von Halbleitereinrichtungen
CH398797A (de) Verfahren zur Herstellung eines p-dotierten Bereiches in Körpern aus einkristallinem Halbleitermaterial
CH510328A (de) Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden