CH370165A - Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors

Info

Publication number
CH370165A
CH370165A CH6825259A CH6825259A CH370165A CH 370165 A CH370165 A CH 370165A CH 6825259 A CH6825259 A CH 6825259A CH 6825259 A CH6825259 A CH 6825259A CH 370165 A CH370165 A CH 370165A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH6825259A
Other languages
German (de)
English (en)
Inventor
Anthony Beale Julian Robert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH370165A publication Critical patent/CH370165A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CH6825259A 1958-01-16 1959-01-13 Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors CH370165A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1561/58A GB911292A (en) 1958-01-16 1958-01-16 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
CH370165A true CH370165A (de) 1963-06-30

Family

ID=9724105

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6825259A CH370165A (de) 1958-01-16 1959-01-13 Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors

Country Status (7)

Country Link
US (1) US3069297A (it)
BE (1) BE574814A (it)
CH (1) CH370165A (it)
DE (1) DE1090770B (it)
FR (1) FR1225692A (it)
GB (1) GB911292A (it)
NL (2) NL235051A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252855A (it) * 1959-06-23
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
NL258921A (it) * 1959-12-14
BE627004A (it) * 1962-01-12
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
GB1074285A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone
DE1215754B (de) * 1964-02-24 1966-05-05 Danfoss As Elektronischer Schalter
DE1614861C3 (de) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL91651C (it) * 1953-12-09
BE548647A (it) * 1955-06-28
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
NL218192A (it) * 1956-06-18

Also Published As

Publication number Publication date
GB911292A (en) 1962-11-21
BE574814A (it)
FR1225692A (fr) 1960-07-04
NL235051A (it)
DE1090770B (de) 1960-10-13
NL121250C (it)
US3069297A (en) 1962-12-18

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