CH361058A - Verfahren zur Herstellung einer mindestens zwei p-n-Übergänge aufweisenden Halbleiteranordnung, insbesondere eines Transistors - Google Patents
Verfahren zur Herstellung einer mindestens zwei p-n-Übergänge aufweisenden Halbleiteranordnung, insbesondere eines TransistorsInfo
- Publication number
- CH361058A CH361058A CH361058DA CH361058A CH 361058 A CH361058 A CH 361058A CH 361058D A CH361058D A CH 361058DA CH 361058 A CH361058 A CH 361058A
- Authority
- CH
- Switzerland
- Prior art keywords
- junctions
- transistor
- producing
- semiconductor arrangement
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24559/56A GB852904A (en) | 1956-08-10 | 1956-08-10 | Improvements in and relating to methods of manufacturing semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH361058A true CH361058A (de) | 1962-03-31 |
Family
ID=10213541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH361058D CH361058A (de) | 1956-08-10 | 1957-08-08 | Verfahren zur Herstellung einer mindestens zwei p-n-Übergänge aufweisenden Halbleiteranordnung, insbesondere eines Transistors |
Country Status (8)
Country | Link |
---|---|
US (1) | US3512055A (de) |
BE (1) | BE559921A (de) |
CH (1) | CH361058A (de) |
DE (1) | DE1289190B (de) |
ES (1) | ES237031A1 (de) |
FR (1) | FR1200735A (de) |
GB (1) | GB852904A (de) |
NL (2) | NL113003C (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5069907A (en) * | 1990-03-23 | 1991-12-03 | Phoenix Medical Technology | Surgical drape having incorporated therein a broad spectrum antimicrobial agent |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
FR1103544A (fr) * | 1953-05-25 | 1955-11-03 | Rca Corp | Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci |
BE531626A (de) * | 1953-09-04 | |||
BE532474A (de) * | 1953-10-13 | |||
NL109817C (de) * | 1955-12-02 | |||
US2805370A (en) * | 1956-04-26 | 1957-09-03 | Bell Telephone Labor Inc | Alloyed connections to semiconductors |
-
0
- NL NL219673D patent/NL219673A/xx unknown
- BE BE559921D patent/BE559921A/xx unknown
- NL NL113003D patent/NL113003C/xx active
-
1956
- 1956-08-10 GB GB24559/56A patent/GB852904A/en not_active Expired
-
1957
- 1957-08-07 DE DEN13978A patent/DE1289190B/de active Pending
- 1957-08-07 ES ES0237031A patent/ES237031A1/es not_active Expired
- 1957-08-08 CH CH361058D patent/CH361058A/de unknown
- 1957-08-08 FR FR1200735D patent/FR1200735A/fr not_active Expired
-
1967
- 1967-08-06 US US676563A patent/US3512055A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB852904A (en) | 1960-11-02 |
NL219673A (de) | |
ES237031A1 (es) | 1958-03-01 |
NL113003C (de) | |
FR1200735A (fr) | 1959-12-23 |
US3512055A (en) | 1970-05-12 |
BE559921A (de) | |
DE1289190B (de) | 1969-02-13 |
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