FR1200735A - Système semi-conducteur à couche d'arrêt, en particulier transistron, et son procédé de fabrication - Google Patents

Système semi-conducteur à couche d'arrêt, en particulier transistron, et son procédé de fabrication

Info

Publication number
FR1200735A
FR1200735A FR1200735DA FR1200735A FR 1200735 A FR1200735 A FR 1200735A FR 1200735D A FR1200735D A FR 1200735DA FR 1200735 A FR1200735 A FR 1200735A
Authority
FR
France
Prior art keywords
transistron
manufacture
barrier layer
semiconductor system
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1200735A publication Critical patent/FR1200735A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
FR1200735D 1956-08-10 1957-08-08 Système semi-conducteur à couche d'arrêt, en particulier transistron, et son procédé de fabrication Expired FR1200735A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24559/56A GB852904A (en) 1956-08-10 1956-08-10 Improvements in and relating to methods of manufacturing semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1200735A true FR1200735A (fr) 1959-12-23

Family

ID=10213541

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1200735D Expired FR1200735A (fr) 1956-08-10 1957-08-08 Système semi-conducteur à couche d'arrêt, en particulier transistron, et son procédé de fabrication

Country Status (8)

Country Link
US (1) US3512055A (fr)
BE (1) BE559921A (fr)
CH (1) CH361058A (fr)
DE (1) DE1289190B (fr)
ES (1) ES237031A1 (fr)
FR (1) FR1200735A (fr)
GB (1) GB852904A (fr)
NL (2) NL113003C (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5069907A (en) * 1990-03-23 1991-12-03 Phoenix Medical Technology Surgical drape having incorporated therein a broad spectrum antimicrobial agent

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
FR1103544A (fr) * 1953-05-25 1955-11-03 Rca Corp Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci
BE531626A (fr) * 1953-09-04
BE532474A (fr) * 1953-10-13
BE550586A (fr) * 1955-12-02
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors

Also Published As

Publication number Publication date
CH361058A (de) 1962-03-31
US3512055A (en) 1970-05-12
NL113003C (fr)
BE559921A (fr)
GB852904A (en) 1960-11-02
NL219673A (fr)
ES237031A1 (es) 1958-03-01
DE1289190B (de) 1969-02-13

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