FR1297206A - Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt - Google Patents

Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt

Info

Publication number
FR1297206A
FR1297206A FR861867A FR861867A FR1297206A FR 1297206 A FR1297206 A FR 1297206A FR 861867 A FR861867 A FR 861867A FR 861867 A FR861867 A FR 861867A FR 1297206 A FR1297206 A FR 1297206A
Authority
FR
France
Prior art keywords
manufacturing process
barrier layer
semiconductor barrier
photoelectric system
layer photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR861867A
Other languages
English (en)
Inventor
Claude Beauzee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee filed Critical Electronique & Physique
Priority to FR861867A priority Critical patent/FR1297206A/fr
Priority to GB1821662A priority patent/GB936868A/en
Priority to DEN21570A priority patent/DE1202912B/de
Application granted granted Critical
Publication of FR1297206A publication Critical patent/FR1297206A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
FR861867A 1961-05-16 1961-05-16 Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt Expired FR1297206A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR861867A FR1297206A (fr) 1961-05-16 1961-05-16 Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt
GB1821662A GB936868A (en) 1961-05-16 1962-05-11 Improvements in or relating to methods of manufacturing photo-electric semi-conductor devices
DEN21570A DE1202912B (de) 1961-05-16 1962-05-12 Verfahren zum Herstellen eines photoelektrischen halbleitenden Sperrschichtsystems

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR861867A FR1297206A (fr) 1961-05-16 1961-05-16 Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt

Publications (1)

Publication Number Publication Date
FR1297206A true FR1297206A (fr) 1962-06-29

Family

ID=8755219

Family Applications (1)

Application Number Title Priority Date Filing Date
FR861867A Expired FR1297206A (fr) 1961-05-16 1961-05-16 Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt

Country Status (3)

Country Link
DE (1) DE1202912B (fr)
FR (1) FR1297206A (fr)
GB (1) GB936868A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142114A2 (fr) * 1983-11-11 1985-05-22 TELEFUNKEN electronic GmbH Procédé de fabrication d'une cellule solaire

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2966720A (en) * 1959-03-10 1961-01-03 Texas Instruments Inc Method of forming semiconductive devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142114A2 (fr) * 1983-11-11 1985-05-22 TELEFUNKEN electronic GmbH Procédé de fabrication d'une cellule solaire
EP0142114A3 (en) * 1983-11-11 1986-12-10 Telefunken Electronic Gmbh Method of manufacturing a solar cell

Also Published As

Publication number Publication date
DE1202912B (de) 1965-10-14
GB936868A (en) 1963-09-18

Similar Documents

Publication Publication Date Title
CH465065A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1364466A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1293869A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1297206A (fr) Procédé de fabrication d'un système photo-électrique semi-conducteur à couche d'arrêt
FR1210353A (fr) Système semi-conducteur à couche d'arrêt et son procédé de fabrication
BE609491A (fr) Procédé de fabrication d'un système à couche d'arrêt semi-conducteur muni d'un corps semi-conducteur en silicium
FR1213335A (fr) Procédé de fabrication d'un système d'électrodes à semi-conducteur
FR1206897A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1343740A (fr) Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames
CH474151A (fr) Procédé de fabrication d'un composant semiconducteur
FR1374096A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1348733A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1340091A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1313817A (fr) Procédé de fabrication d'un système semi-conducteur à couche d'arrêt comportant un corps semi-conducteur en silicium
FR1522201A (fr) Procédé de fabrication de dispositifs semi-conducteurs à jonction
FR1478042A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1326261A (fr) Procédé de fabrication d'un composant à semi-conducteur
FR1375673A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1321984A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1200735A (fr) Système semi-conducteur à couche d'arrêt, en particulier transistron, et son procédé de fabrication
BE613931A (fr) Procédé de fabrication d'une couche aimantable
FR1406461A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1330436A (fr) Procédé de fabrication d'un semi-conducteur
FR1137408A (fr) Procédé de fabrication d'un système d'électrodes à couche d'arrêt
FR1336812A (fr) Diode à semi-conducteur et procédé de fabrication