FR1343740A - Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames - Google Patents

Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames

Info

Publication number
FR1343740A
FR1343740A FR912052A FR912052A FR1343740A FR 1343740 A FR1343740 A FR 1343740A FR 912052 A FR912052 A FR 912052A FR 912052 A FR912052 A FR 912052A FR 1343740 A FR1343740 A FR 1343740A
Authority
FR
France
Prior art keywords
plates
manufacturing silicon
photodiodes
photodiodes obtained
silicon plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR912052A
Other languages
English (en)
Inventor
Jean-Jacques Brissot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee filed Critical Electronique & Physique
Priority to FR912052A priority Critical patent/FR1343740A/fr
Application granted granted Critical
Publication of FR1343740A publication Critical patent/FR1343740A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR912052A 1962-10-12 1962-10-12 Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames Expired FR1343740A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR912052A FR1343740A (fr) 1962-10-12 1962-10-12 Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR912052A FR1343740A (fr) 1962-10-12 1962-10-12 Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames

Publications (1)

Publication Number Publication Date
FR1343740A true FR1343740A (fr) 1963-11-22

Family

ID=8788574

Family Applications (1)

Application Number Title Priority Date Filing Date
FR912052A Expired FR1343740A (fr) 1962-10-12 1962-10-12 Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames

Country Status (1)

Country Link
FR (1) FR1343740A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2604351A1 (de) * 1975-02-07 1976-08-19 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem eine halbleitermaterialschicht auf einem substrat angebracht wird, vorrichtung zum durchfuehren dieses verfahrens und durch dieses verfahren hergestellte halbleiteranordnungen
FR2500768A1 (fr) * 1981-02-27 1982-09-03 Labo Electronique Physique Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues
FR2757182A1 (fr) * 1996-12-17 1998-06-19 Saint Gobain Norton Ind Cerami Procede et dispositif pour la croissance de cristal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2604351A1 (de) * 1975-02-07 1976-08-19 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem eine halbleitermaterialschicht auf einem substrat angebracht wird, vorrichtung zum durchfuehren dieses verfahrens und durch dieses verfahren hergestellte halbleiteranordnungen
FR2500768A1 (fr) * 1981-02-27 1982-09-03 Labo Electronique Physique Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues
FR2757182A1 (fr) * 1996-12-17 1998-06-19 Saint Gobain Norton Ind Cerami Procede et dispositif pour la croissance de cristal

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