GB936868A - Improvements in or relating to methods of manufacturing photo-electric semi-conductor devices - Google Patents

Improvements in or relating to methods of manufacturing photo-electric semi-conductor devices

Info

Publication number
GB936868A
GB936868A GB1821662A GB1821662A GB936868A GB 936868 A GB936868 A GB 936868A GB 1821662 A GB1821662 A GB 1821662A GB 1821662 A GB1821662 A GB 1821662A GB 936868 A GB936868 A GB 936868A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
photo
conductor
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1821662A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB936868A publication Critical patent/GB936868A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

936,868. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 11, 1962 [May 16, 1961], No. 18216/62. Class 37. A photo-electric semi-conductor device, especially for use in solar cells, comprises a body of semi-conductor material of one conductivity type into which is diffused material of the opposite conductivity type characterized in that the diffusion treatment occurs in two separate stages whereby the thickness of the diffused layer in the portion of the surface to be irradiated is made less than that in the remainder of the surface. The body 1 may be of Ge, Si, GaAs, AlSb, or CdTe but in the embodiment described it is B doped Si of resistivity 0.1 ohm cm. This is heated to 1100� C. in a quartz tube through which oxygen is passed, the oxygen before reaching the body passing over a boat containing P 2 O 5 heated to 220� C. An N-type layer 2, 6� thick, is thereby formed in the surface of the body which is also covered by a transparent vitreous layer 3 of phosphorus silicate. All of the body except its upper surface is coated with a polystyrene resist and is etched in a H.F., HNO 3 bath to remove the N-type layer from said upper surface (which is the surface to be irradiated), the resist being subsequently removed with toluene. A second diffusion treatment follows whereby an N-type layer 5, 0.3� thick, is obtained. An annular ohmic contact 7 of Ag is then attached to the layer 2 and an ohmic contact 8 of Ag containing 2% of Al is attached to the body 1. Contact 8 may be rectifying if it is desired to produce a photo-transistor.
GB1821662A 1961-05-16 1962-05-11 Improvements in or relating to methods of manufacturing photo-electric semi-conductor devices Expired GB936868A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR861867A FR1297206A (en) 1961-05-16 1961-05-16 Manufacturing process of a semiconductor barrier layer photoelectric system

Publications (1)

Publication Number Publication Date
GB936868A true GB936868A (en) 1963-09-18

Family

ID=8755219

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1821662A Expired GB936868A (en) 1961-05-16 1962-05-11 Improvements in or relating to methods of manufacturing photo-electric semi-conductor devices

Country Status (3)

Country Link
DE (1) DE1202912B (en)
FR (1) FR1297206A (en)
GB (1) GB936868A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3340874A1 (en) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn METHOD FOR PRODUCING A SOLAR CELL

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2966720A (en) * 1959-03-10 1961-01-03 Texas Instruments Inc Method of forming semiconductive devices

Also Published As

Publication number Publication date
FR1297206A (en) 1962-06-29
DE1202912B (en) 1965-10-14

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