GB935484A - A process for use in the production of a semi-conductor device - Google Patents

A process for use in the production of a semi-conductor device

Info

Publication number
GB935484A
GB935484A GB4002660A GB4002660A GB935484A GB 935484 A GB935484 A GB 935484A GB 4002660 A GB4002660 A GB 4002660A GB 4002660 A GB4002660 A GB 4002660A GB 935484 A GB935484 A GB 935484A
Authority
GB
United Kingdom
Prior art keywords
region
layer
semi
conductor
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4002660A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB935484A publication Critical patent/GB935484A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

935,484. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Nov. 21, 1960 [Nov. 21, 1959], No. 40026/60. Class 37. During manufacture of a semi-conductor device a semi-conductor body is so doped that a doping layer extends into and over an entire surface of the body, the rest of the body being substantially unaffected by the doping, and a marginal region of the layer is subsequently removed so that a portion of the body surrounding the layer is left unexposed. In the construction shown in Fig. 4 a body of silicon of resistivity 200 ohm cms. has a layer 4 of goldantimony alloyed to it, the resistivity of this region being 80 ohm cms. and in the centre of the region is a more heavily doped (0.01 ohm cms.) N-type region 2. The edge of layer 4 is removed where shown dotted by centrifugal etching before or after the production of region 2, and this is said to maintain the width of the space charge zone even though negative ions are adsorbed on the surface. A P region 7 may be alloyed to the opposite face of the device. The conductivity type of the various regions may be reversed.
GB4002660A 1959-11-21 1960-11-21 A process for use in the production of a semi-conductor device Expired GB935484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65923A DE1208413B (en) 1959-11-21 1959-11-21 Process for the production of planar pn junctions on semiconductor components

Publications (1)

Publication Number Publication Date
GB935484A true GB935484A (en) 1963-08-28

Family

ID=7498409

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4002660A Expired GB935484A (en) 1959-11-21 1960-11-21 A process for use in the production of a semi-conductor device

Country Status (3)

Country Link
CH (1) CH396214A (en)
DE (1) DE1208413B (en)
GB (1) GB935484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012004147A1 (en) * 2010-07-06 2012-01-12 Infineon Technologies Bipolar Gmbh & Co. Kg Method and device for producing an edge structure of a semiconductor component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
DE1170555B (en) * 1956-07-23 1964-05-21 Siemens Ag Method for manufacturing a semiconductor component with three zones of alternating conductivity types
AT202600B (en) * 1956-12-13 1959-03-10 Philips Nv Field effect transistor and method of making such a transistor
BE552928A (en) * 1957-03-18
DE1056474B (en) * 1957-03-23 1959-04-30 Dresden Feinmess Fuse for the trigger in photographic cameras

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012004147A1 (en) * 2010-07-06 2012-01-12 Infineon Technologies Bipolar Gmbh & Co. Kg Method and device for producing an edge structure of a semiconductor component

Also Published As

Publication number Publication date
DE1208413B (en) 1966-01-05
CH396214A (en) 1965-07-31

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