CA2749836A1 - Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaique - Google Patents

Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaique Download PDF

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Publication number
CA2749836A1
CA2749836A1 CA2749836A CA2749836A CA2749836A1 CA 2749836 A1 CA2749836 A1 CA 2749836A1 CA 2749836 A CA2749836 A CA 2749836A CA 2749836 A CA2749836 A CA 2749836A CA 2749836 A1 CA2749836 A1 CA 2749836A1
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CA
Canada
Prior art keywords
solution
boe
water
oxidizer
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2749836A
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English (en)
Inventor
Joannes T.V. Hoogboom
Johannes A.E. Oosterholt
Sabrina Ritmeijer
Lucas M.H. Groenewoud
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Avantor Performance Materials BV
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Avantor Performance Materials BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avantor Performance Materials BV filed Critical Avantor Performance Materials BV
Publication of CA2749836A1 publication Critical patent/CA2749836A1/fr
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne le traitement d'un substrat de plaquette de silicium, amorphe, monocristallin ou polycristallin, en couches minces, destiné à être utilisé dans une cellule photovoltaïque. Ce substrat comprend au moins une jonction pn ou np et une couche de verre de phosphosilicate ou de borosilicate partielle sur la surface supérieure du substrat de plaquette, ce qui permet d'augmenter au moins (a) la résistance de couche de la plaquette ou (b) le niveau de densité de puissance de la cellule photovoltaïque fabriquée à partir de ladite plaquette. La solution de traitement selon l'invention est une solution acide constituée d'une solution de gravure oxyde tamponnée contenant au moins un hydroxyde de tétraalkylammonium, de l'acide acétique, au moins un tensioactif non ionique, au moins un chélateur métallique, une source d'ammoniac exempte de métal, une source d'ions fluorure exempte de métal et de l'eau, mélangée à une solution d'oxydant et facultativement à de l'eau.
CA2749836A 2009-01-14 2010-01-11 Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaique Abandoned CA2749836A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14447909P 2009-01-14 2009-01-14
US61/144,479 2009-01-14
US22568509P 2009-07-15 2009-07-15
US61/225,685 2009-07-15
PCT/EP2010/000076 WO2010081661A2 (fr) 2009-01-14 2010-01-11 Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaïque

Publications (1)

Publication Number Publication Date
CA2749836A1 true CA2749836A1 (fr) 2010-07-22

Family

ID=42272664

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2749836A Abandoned CA2749836A1 (fr) 2009-01-14 2010-01-11 Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaique

Country Status (14)

Country Link
EP (1) EP2387801A2 (fr)
JP (1) JP2012515444A (fr)
KR (1) KR20110105396A (fr)
CN (1) CN102282682B (fr)
AU (1) AU2010205945A1 (fr)
BR (1) BRPI1006176A2 (fr)
CA (1) CA2749836A1 (fr)
IL (1) IL213936A0 (fr)
MX (1) MX2011007413A (fr)
RU (1) RU2011134068A (fr)
SG (1) SG172973A1 (fr)
TW (1) TW201036058A (fr)
WO (1) WO2010081661A2 (fr)
ZA (1) ZA201105863B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
JP2012238849A (ja) 2011-04-21 2012-12-06 Rohm & Haas Electronic Materials Llc 改良された多結晶テクスチャ化組成物および方法
DE102011103538A1 (de) 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat und Verwendung
CN113980580B (zh) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 一种单晶硅片的碱刻蚀抛光方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
TW263531B (fr) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
KR20010066769A (ko) * 1999-04-20 2001-07-11 가네꼬 히사시 세정액
JP2003152176A (ja) * 2001-11-14 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置の洗浄方法及びその製造方法
TWI330766B (en) * 2002-06-07 2010-09-21 Mallinckrodt Bader Inc Microelectronic cleaning and arc remover compositions
JP4319006B2 (ja) * 2003-10-23 2009-08-26 シャープ株式会社 太陽電池セルの製造方法
JP4553597B2 (ja) * 2004-01-30 2010-09-29 シャープ株式会社 シリコン基板の製造方法および太陽電池セルの製造方法
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
TW200918664A (en) * 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods

Also Published As

Publication number Publication date
WO2010081661A3 (fr) 2010-10-07
TW201036058A (en) 2010-10-01
WO2010081661A2 (fr) 2010-07-22
KR20110105396A (ko) 2011-09-26
CN102282682B (zh) 2016-07-06
RU2011134068A (ru) 2013-02-20
IL213936A0 (en) 2011-07-31
SG172973A1 (en) 2011-08-29
CN102282682A (zh) 2011-12-14
EP2387801A2 (fr) 2011-11-23
BRPI1006176A2 (pt) 2019-09-24
MX2011007413A (es) 2011-07-21
JP2012515444A (ja) 2012-07-05
AU2010205945A1 (en) 2011-09-01
ZA201105863B (en) 2012-04-25

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FZDE Discontinued

Effective date: 20140113

FZDE Discontinued

Effective date: 20140113