CN102282682B - 增加晶片薄层电阻和/或光电池功率密度水平的溶液 - Google Patents

增加晶片薄层电阻和/或光电池功率密度水平的溶液 Download PDF

Info

Publication number
CN102282682B
CN102282682B CN201080004496.XA CN201080004496A CN102282682B CN 102282682 B CN102282682 B CN 102282682B CN 201080004496 A CN201080004496 A CN 201080004496A CN 102282682 B CN102282682 B CN 102282682B
Authority
CN
China
Prior art keywords
solution
weight
oxide etch
buffered oxide
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080004496.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102282682A (zh
Inventor
乔安妮斯.T.V.胡格布姆
约翰尼斯.A.E.奥斯特霍尔特
萨布里纳.里特梅杰
卢卡斯.M.H.格罗尼伍德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials BV
Original Assignee
Mallinckrodt Baker BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker BV filed Critical Mallinckrodt Baker BV
Publication of CN102282682A publication Critical patent/CN102282682A/zh
Application granted granted Critical
Publication of CN102282682B publication Critical patent/CN102282682B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN201080004496.XA 2009-01-14 2010-01-11 增加晶片薄层电阻和/或光电池功率密度水平的溶液 Active CN102282682B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14447909P 2009-01-14 2009-01-14
US61/144,479 2009-01-14
US22568509P 2009-07-15 2009-07-15
US61/225,685 2009-07-15
PCT/EP2010/000076 WO2010081661A2 (fr) 2009-01-14 2010-01-11 Solution destinee a augmenter la resistance de couche de plaquette et/ou le niveau de densite de puissance de cellule photovoltaïque

Publications (2)

Publication Number Publication Date
CN102282682A CN102282682A (zh) 2011-12-14
CN102282682B true CN102282682B (zh) 2016-07-06

Family

ID=42272664

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080004496.XA Active CN102282682B (zh) 2009-01-14 2010-01-11 增加晶片薄层电阻和/或光电池功率密度水平的溶液

Country Status (14)

Country Link
EP (1) EP2387801A2 (fr)
JP (1) JP2012515444A (fr)
KR (1) KR20110105396A (fr)
CN (1) CN102282682B (fr)
AU (1) AU2010205945A1 (fr)
BR (1) BRPI1006176A2 (fr)
CA (1) CA2749836A1 (fr)
IL (1) IL213936A0 (fr)
MX (1) MX2011007413A (fr)
RU (1) RU2011134068A (fr)
SG (1) SG172973A1 (fr)
TW (1) TW201036058A (fr)
WO (1) WO2010081661A2 (fr)
ZA (1) ZA201105863B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
EP2514799A1 (fr) 2011-04-21 2012-10-24 Rohm and Haas Electronic Materials LLC Composition de texturation polycristalline améliorée et procédé
DE102011103538A1 (de) 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat und Verwendung
CN113980580B (zh) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 一种单晶硅片的碱刻蚀抛光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113551A (en) * 1976-11-19 1978-09-12 International Business Machines Corporation Polycrystalline silicon etching with tetramethylammonium hydroxide
US5705089A (en) * 1992-03-11 1998-01-06 Mitsubishi Gas Chemical Company, Inc. Cleaning fluid for semiconductor substrate
CN1659480A (zh) * 2002-06-07 2005-08-24 马林克罗特贝克公司 用于微电子基底的清洁组合物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010066769A (ko) * 1999-04-20 2001-07-11 가네꼬 히사시 세정액
JP2003152176A (ja) * 2001-11-14 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置の洗浄方法及びその製造方法
JP4319006B2 (ja) * 2003-10-23 2009-08-26 シャープ株式会社 太陽電池セルの製造方法
JP4553597B2 (ja) * 2004-01-30 2010-09-29 シャープ株式会社 シリコン基板の製造方法および太陽電池セルの製造方法
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
TW200918664A (en) * 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113551A (en) * 1976-11-19 1978-09-12 International Business Machines Corporation Polycrystalline silicon etching with tetramethylammonium hydroxide
US5705089A (en) * 1992-03-11 1998-01-06 Mitsubishi Gas Chemical Company, Inc. Cleaning fluid for semiconductor substrate
CN1659480A (zh) * 2002-06-07 2005-08-24 马林克罗特贝克公司 用于微电子基底的清洁组合物

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PERFORMANCE IMPROVEMENT IN SIMPLIFIED PROCESSING FOR SCREEN-PRINTED mc-Si SOLAR CELLS;M.S. Jeon;《Photovoltaic Specialists Conference,2005. Conference Record of the Thirty-first IEEE》;20051231;第1096页左栏倒数第11行至第1099页右栏第8行 *

Also Published As

Publication number Publication date
CN102282682A (zh) 2011-12-14
ZA201105863B (en) 2012-04-25
AU2010205945A1 (en) 2011-09-01
TW201036058A (en) 2010-10-01
WO2010081661A2 (fr) 2010-07-22
MX2011007413A (es) 2011-07-21
JP2012515444A (ja) 2012-07-05
BRPI1006176A2 (pt) 2019-09-24
SG172973A1 (en) 2011-08-29
CA2749836A1 (fr) 2010-07-22
KR20110105396A (ko) 2011-09-26
WO2010081661A3 (fr) 2010-10-07
EP2387801A2 (fr) 2011-11-23
IL213936A0 (en) 2011-07-31
RU2011134068A (ru) 2013-02-20

Similar Documents

Publication Publication Date Title
US8366954B2 (en) Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
US8883543B2 (en) Method of producing wafer for solar cell, method of producing solar cell, and method of producing solar cell module
CN102181935B (zh) 一种制作单晶硅绒面的方法及腐蚀液
US9537037B2 (en) Wet etching method for an N-type bifacial cell
CN104562011B (zh) 多晶硅片的制绒辅助剂及制绒工艺
US10217893B2 (en) Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices
TWI573859B (zh) 紋理蝕刻液組成物及結晶狀矽晶圓之紋理蝕刻方法
CN102282682B (zh) 增加晶片薄层电阻和/或光电池功率密度水平的溶液
TWI542664B (zh) 紋理蝕刻液組成物及結晶狀矽晶圓之紋理蝕刻方法
US9324899B2 (en) Emitter diffusion conditions for black silicon
Yadav et al. Comparative study of different silicon oxides used as interfacial passivation layer (SiNy: H/SiOx/n+-Si) in industrial monocrystalline silicon solar cells
CN108447944A (zh) 一种n型pert双面电池制备方法
CN107170846A (zh) 单晶硅太阳能电池的表面绒面制备方法
CN106133916B (zh) 太阳能电池光接收表面的钝化
CN102716867B (zh) 一种用于太阳能电池的晶体硅片的清洗方法
CN112812776A (zh) 一种腐蚀液及其制备方法和应用
WO2013153950A1 (fr) Composition de dispersant de revêtement, procédé de fabrication de composition de dispersant de revêtement, cellule solaire et procédé de fabrication de cellule solaire
CN116004233A (zh) 一种提升硅片绒面均整度的刻蚀添加剂及使用方法
CN103510160A (zh) 一种晶体硅太阳能电池制绒添加剂
CN104278330A (zh) 一种晶硅太阳能电池用制绒液及其制备方法
CN102181936A (zh) 一种制作多晶硅绒面的方法及腐蚀液
WO2018043523A1 (fr) Procédé de formation d'une couche de diffusion de bore et d'une couche de diffusion de phosphore
JP5880055B2 (ja) 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法
JP2015162661A (ja) シリコン太陽電池用塗布型リンドーピング材料
JP2013016631A (ja) エッチング液

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant