CA2709718A1 - Large area nanopatterning method and apparatus - Google Patents
Large area nanopatterning method and apparatus Download PDFInfo
- Publication number
- CA2709718A1 CA2709718A1 CA2709718A CA2709718A CA2709718A1 CA 2709718 A1 CA2709718 A1 CA 2709718A1 CA 2709718 A CA2709718 A CA 2709718A CA 2709718 A CA2709718 A CA 2709718A CA 2709718 A1 CA2709718 A1 CA 2709718A1
- Authority
- CA
- Canada
- Prior art keywords
- cylinder
- accordance
- radiation
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1186108P | 2008-01-22 | 2008-01-22 | |
US61/011,861 | 2008-01-22 | ||
PCT/US2008/012901 WO2009094009A1 (en) | 2008-01-22 | 2008-11-18 | Large area nanopatterning method and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2709718A1 true CA2709718A1 (en) | 2009-07-30 |
Family
ID=40901352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2709718A Abandoned CA2709718A1 (en) | 2008-01-22 | 2008-11-18 | Large area nanopatterning method and apparatus |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP2238608A4 (zh) |
JP (1) | JP5102879B2 (zh) |
KR (1) | KR20110008159A (zh) |
CN (2) | CN105171985A (zh) |
AU (1) | AU2008348353A1 (zh) |
CA (1) | CA2709718A1 (zh) |
MX (1) | MX2010007954A (zh) |
RU (1) | RU2488188C2 (zh) |
TW (1) | TWI518027B (zh) |
WO (1) | WO2009094009A1 (zh) |
Families Citing this family (40)
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FR2871366A1 (fr) | 2004-06-09 | 2005-12-16 | Ceravic Soc Par Actions Simpli | Implant expansible prothetique osseux |
WO2008153674A1 (en) | 2007-06-09 | 2008-12-18 | Boris Kobrin | Method and apparatus for anisotropic etching |
US8518633B2 (en) | 2008-01-22 | 2013-08-27 | Rolith Inc. | Large area nanopatterning method and apparatus |
US8192920B2 (en) | 2008-04-26 | 2012-06-05 | Rolith Inc. | Lithography method |
US8334217B2 (en) | 2008-06-09 | 2012-12-18 | Rolith Inc. | Material deposition over template |
CN101692151B (zh) * | 2009-09-17 | 2011-12-28 | 复旦大学 | 一种基于软模板纳米压印技术的硅纳米线制作方法 |
AU2011205582A1 (en) * | 2010-01-12 | 2012-08-30 | Rolith, Inc. | Nanopatterning method and apparatus |
US9465296B2 (en) * | 2010-01-12 | 2016-10-11 | Rolith, Inc. | Nanopatterning method and apparatus |
CN101846880B (zh) * | 2010-05-12 | 2012-05-30 | 上海交通大学 | 激发表面等离子体的纳米光刻方法 |
AT510217B1 (de) * | 2010-08-13 | 2013-12-15 | Hueck Folien Gmbh | Verfahren zur partiellen mattierung von uv-lackschichten |
RU2544280C2 (ru) * | 2010-08-23 | 2015-03-20 | Ролит, Инк. | Маска для ближнепольной литографии и ее изготовление |
US9187839B2 (en) * | 2010-10-07 | 2015-11-17 | Michael Sheehy | Process for the manufacture of sealed anodized aluminum components |
CN102169819B (zh) * | 2011-01-14 | 2013-01-30 | 中国科学院物理研究所 | 一种制备纳米金属结构的方法 |
WO2013049367A2 (en) * | 2011-09-30 | 2013-04-04 | Rolith, Inc. | Plasmonic lithography using phase mask |
KR101260221B1 (ko) * | 2011-12-01 | 2013-05-06 | 주식회사 엘지화학 | 마스크 |
WO2013158543A1 (en) * | 2012-04-17 | 2013-10-24 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
CN104412165B (zh) * | 2012-05-02 | 2018-06-19 | 超材料技术美国公司 | 圆筒形聚合物掩膜和制造方法 |
US9481112B2 (en) | 2013-01-31 | 2016-11-01 | Metamaterial Technologies Usa, Inc. | Cylindrical master mold assembly for casting cylindrical masks |
US20150336301A1 (en) | 2012-05-02 | 2015-11-26 | Rolith, Inc. | Cylindrical polymer mask and method of fabrication |
US9782917B2 (en) | 2013-01-31 | 2017-10-10 | Metamaterial Technologies Usa, Inc. | Cylindrical master mold and method of fabrication |
CN102759855A (zh) * | 2012-07-17 | 2012-10-31 | 西安交通大学 | 一种单码道绝对式光栅尺辊压印模具制造方法 |
TWI474432B (zh) * | 2012-11-15 | 2015-02-21 | Lextar Electronics Corp | 晶粒定位裝置、具有晶粒定位裝置的晶粒定位系統與發光二極體顯示板的晶粒定位方法 |
RU2593463C2 (ru) * | 2013-12-23 | 2016-08-10 | Станислав Викторович Хартов | Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации |
US9244356B1 (en) | 2014-04-03 | 2016-01-26 | Rolith, Inc. | Transparent metal mesh and method of manufacture |
KR101636696B1 (ko) | 2014-05-23 | 2016-07-06 | 연세대학교 산학협력단 | 플렉서블 나노박막 광구조를 이용하는 가변 대면적 나노이미징 광학헤드 및 이미징 장치 |
WO2015183243A1 (en) | 2014-05-27 | 2015-12-03 | Rolith, Inc. | Anti-counterfeiting features and methods of fabrication and detection |
KR102252049B1 (ko) * | 2014-08-04 | 2021-05-18 | 삼성디스플레이 주식회사 | 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법 |
KR102240761B1 (ko) | 2015-01-29 | 2021-04-15 | 삼성디스플레이 주식회사 | 가변 마스크 |
WO2017030151A1 (ja) * | 2015-08-19 | 2017-02-23 | 国立大学法人 東京大学 | 母型の製造方法 |
TWI579640B (zh) * | 2015-10-15 | 2017-04-21 | 許銘案 | 薄膜光罩、貼合輔具、貼合與曝光輔助裝置及將一薄膜光罩貼合於一曲面基板的方法 |
CN106773531B (zh) * | 2017-01-03 | 2020-06-16 | 京东方科技集团股份有限公司 | 一种纳米压印装置中的压印滚轮及纳米压印装置 |
CN106547044B (zh) * | 2017-01-24 | 2019-03-01 | 深圳市华星光电技术有限公司 | 一种偏光片的加工设备及制造方法 |
CN106647192A (zh) * | 2017-03-10 | 2017-05-10 | 深圳市华星光电技术有限公司 | 曝光设备 |
US10510287B2 (en) * | 2017-08-07 | 2019-12-17 | Industrial Technology Research Institute | Transfer method of expanding pitches of device and an apparatus for performing the same |
CN109901362B (zh) * | 2017-12-11 | 2022-04-19 | 中国科学院光电技术研究所 | 二次成像光学光刻方法和设备 |
CN111526990B (zh) * | 2017-12-29 | 2022-09-27 | 3M创新有限公司 | 非平面图案化纳米结构表面及用于其制造的印刷方法 |
KR102096606B1 (ko) * | 2018-08-29 | 2020-04-02 | 부산대학교 산학협력단 | 실린더 표면의 나노구조 임프린트를 위한 소프트 몰드 제조 및 이를 이용한 나노임프린트 공정 방법 |
GB2576922B (en) * | 2018-09-06 | 2021-10-27 | Stensborg As | An optical engine for an imprinter |
CN109668631B (zh) * | 2018-12-11 | 2021-06-01 | 中国科学院光电技术研究所 | 一种大面积、低成本的超导纳米线单光子探测器的制备方法 |
TWI765276B (zh) * | 2020-06-12 | 2022-05-21 | 光群雷射科技股份有限公司 | 透鏡的轉印式製造方法及透鏡轉印層的製造方法 |
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JPS59200419A (ja) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | 大面積露光装置 |
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CN1201532A (zh) * | 1995-09-29 | 1998-12-09 | 纽罗姆技术股份有限公司 | 数字光学媒体录制和复制系统 |
US5865978A (en) * | 1997-05-09 | 1999-02-02 | Cohen; Adam E. | Near-field photolithographic masks and photolithography; nanoscale patterning techniques; apparatus and method therefor |
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-
2008
- 2008-11-18 CN CN201510644135.6A patent/CN105171985A/zh active Pending
- 2008-11-18 TW TW097144514A patent/TWI518027B/zh active
- 2008-11-18 AU AU2008348353A patent/AU2008348353A1/en not_active Abandoned
- 2008-11-18 WO PCT/US2008/012901 patent/WO2009094009A1/en active Application Filing
- 2008-11-18 MX MX2010007954A patent/MX2010007954A/es not_active Application Discontinuation
- 2008-11-18 CN CN2008801245193A patent/CN101911249A/zh active Pending
- 2008-11-18 CA CA2709718A patent/CA2709718A1/en not_active Abandoned
- 2008-11-18 EP EP08871196A patent/EP2238608A4/en not_active Withdrawn
- 2008-11-18 RU RU2010134893/28A patent/RU2488188C2/ru not_active IP Right Cessation
- 2008-11-18 JP JP2010543093A patent/JP5102879B2/ja active Active
- 2008-11-18 KR KR1020107018711A patent/KR20110008159A/ko active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
CN105171985A (zh) | 2015-12-23 |
TWI518027B (zh) | 2016-01-21 |
WO2009094009A1 (en) | 2009-07-30 |
JP2011526069A (ja) | 2011-09-29 |
RU2488188C2 (ru) | 2013-07-20 |
TW200932666A (en) | 2009-08-01 |
MX2010007954A (es) | 2010-11-05 |
CN101911249A (zh) | 2010-12-08 |
EP2238608A1 (en) | 2010-10-13 |
EP2238608A4 (en) | 2012-02-22 |
RU2010134893A (ru) | 2012-02-27 |
JP5102879B2 (ja) | 2012-12-19 |
KR20110008159A (ko) | 2011-01-26 |
AU2008348353A1 (en) | 2009-07-30 |
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