CA2658210A1 - Methode et dispositif permettant de revetir et de traiter la surface des substrats au moyen d'un faisceau plasma - Google Patents
Methode et dispositif permettant de revetir et de traiter la surface des substrats au moyen d'un faisceau plasma Download PDFInfo
- Publication number
- CA2658210A1 CA2658210A1 CA002658210A CA2658210A CA2658210A1 CA 2658210 A1 CA2658210 A1 CA 2658210A1 CA 002658210 A CA002658210 A CA 002658210A CA 2658210 A CA2658210 A CA 2658210A CA 2658210 A1 CA2658210 A1 CA 2658210A1
- Authority
- CA
- Canada
- Prior art keywords
- plasma
- accordance
- layer
- mbar
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 238000000576 coating method Methods 0.000 title claims abstract description 72
- 239000011248 coating agent Substances 0.000 title claims abstract description 64
- 238000004381 surface treatment Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 70
- 238000007750 plasma spraying Methods 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000011343 solid material Substances 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 6
- 239000011224 oxide ceramic Substances 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 239000007789 gas Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000011282 treatment Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 6
- 238000007751 thermal spraying Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 208000036366 Sensation of pressure Diseases 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B16/00—Spray booths
- B05B16/90—Spray booths comprising conveying means for moving objects or other work to be sprayed in and out of the booth, e.g. through the booth
- B05B16/95—Spray booths comprising conveying means for moving objects or other work to be sprayed in and out of the booth, e.g. through the booth the objects or other work to be sprayed lying on, or being held above the conveying means, i.e. not hanging from the conveying means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Coating By Spraying Or Casting (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08154091 | 2008-04-04 | ||
| EP08154091.6 | 2008-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2658210A1 true CA2658210A1 (fr) | 2009-10-04 |
Family
ID=39684287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002658210A Abandoned CA2658210A1 (fr) | 2008-04-04 | 2009-03-12 | Methode et dispositif permettant de revetir et de traiter la surface des substrats au moyen d'un faisceau plasma |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090252945A1 (fr) |
| EP (1) | EP2107131A1 (fr) |
| JP (1) | JP2009249741A (fr) |
| KR (1) | KR20170038778A (fr) |
| CN (1) | CN101550527A (fr) |
| CA (1) | CA2658210A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111111961A (zh) * | 2019-12-29 | 2020-05-08 | 苏州路之遥科技股份有限公司 | 一种马桶圈用ptc加热材料的喷涂装置及喷涂方法 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110086462A1 (en) * | 2009-10-08 | 2011-04-14 | Ovshinsky Stanford R | Process for Manufacturing Solar Cells including Ambient Pressure Plasma Torch Step |
| CA2754458A1 (fr) * | 2010-10-11 | 2012-04-11 | Sulzer Metco Ag | Methode de fabrication d'une structure d'enduction de barriere thermique |
| CA2760005A1 (fr) * | 2010-12-21 | 2012-06-21 | Sulzer Metco Ag | Methode de fabrication d'une structure d'enduction de barriere thermique |
| EP2524973A1 (fr) * | 2011-05-18 | 2012-11-21 | Sulzer Metco AG | Procédé d'injection à arc lumineux pour la fabrication d'une couche poreuse |
| CN104136651A (zh) * | 2011-12-09 | 2014-11-05 | 乔治费歇尔汽车产品(苏州)有限公司 | 用于对基质进行涂覆的方法 |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| CA2803728A1 (fr) * | 2012-02-23 | 2013-08-23 | Forschungszentrum Juelich Gmbh | Procede d'application d'un revetement de barriere thermique au moyen d'un depot physique en phase vapeur par pulverisation de plasma |
| CA2813159A1 (fr) * | 2012-05-24 | 2013-11-24 | Sulzer Metco Ag | Procede de modification d'une region frontiere d'un substrat |
| US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
| US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| US20150079370A1 (en) | 2013-09-18 | 2015-03-19 | Applied Materials, Inc. | Coating architecture for plasma sprayed chamber components |
| JP6272072B2 (ja) * | 2014-02-19 | 2018-01-31 | 小島プレス工業株式会社 | プラズマｃｖｄ装置 |
| US10196728B2 (en) * | 2014-05-16 | 2019-02-05 | Applied Materials, Inc. | Plasma spray coating design using phase and stress control |
| KR102052869B1 (ko) | 2017-05-15 | 2019-12-10 | 강인준 | 당첨 예상번호 범위의 지표데이터로부터 당첨예상심벌을 추출하는 시스템 및 방법 |
| CN107570345A (zh) * | 2017-09-07 | 2018-01-12 | 昆山世铭金属塑料制品有限公司 | 一种标牌喷粉生产线 |
| CN111511965A (zh) * | 2017-09-08 | 2020-08-07 | 各星有限公司 | 用于提拉晶体生长的混合坩埚组件 |
| WO2019133525A1 (fr) * | 2017-12-29 | 2019-07-04 | Corner Star Limited | Ensemble creuset à revêtement synthétique pour croissance de cristaux de czochralski |
| US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
| IT201900001321A1 (it) * | 2019-01-30 | 2020-07-30 | Ima Spa | Metodo per la realizzazione di un dispositivo operatore automatico articolato e relativo dispositivo operatore automatico articolato. |
| CN109805249B (zh) * | 2019-02-21 | 2022-06-14 | 华南理工大学 | 电磁感应耦合射频放电等离子体装置及对果蔬进行清洗保鲜的方法 |
| CN114849948A (zh) * | 2022-06-27 | 2022-08-05 | 上海英雄金笔厂有限公司 | 一种办公用具生产用喷涂装置 |
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| BE766345A (fr) * | 1971-04-27 | 1971-09-16 | Universitaire De L Etat A Mons | Dispositif pour fabriquer des couches minces de substances minerales. |
| DE3513892A1 (de) * | 1985-04-17 | 1986-10-23 | Plasmainvent AG, Zug | Cr(pfeil abwaerts)2(pfeil abwaerts)o(pfeil abwaerts)3(pfeil abwaerts)-schutzschicht und verfahren zu deren herstellung |
| US4788077A (en) * | 1987-06-22 | 1988-11-29 | Union Carbide Corporation | Thermal spray coating having improved addherence, low residual stress and improved resistance to spalling and methods for producing same |
| NL8701530A (nl) | 1987-06-30 | 1989-01-16 | Stichting Fund Ond Material | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
| JP2628601B2 (ja) * | 1988-07-12 | 1997-07-09 | 富士通株式会社 | ダイアモンド被覆超硬合金および超硬合金のダイアモンド被覆方法 |
| JP2938552B2 (ja) * | 1990-10-17 | 1999-08-23 | 富士通株式会社 | コーティング膜の製造方法およびコーティング膜の製造装置 |
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| EP1034843A1 (fr) * | 1999-03-10 | 2000-09-13 | Sulzer Metco AG | Procédé de préparation d'une structure revêtue, utilisable comme catalyseur |
| DE19958474A1 (de) * | 1999-12-04 | 2001-06-21 | Bosch Gmbh Robert | Verfahren zur Erzeugung von Funktionsschichten mit einer Plasmastrahlquelle |
| DE19958473A1 (de) * | 1999-12-04 | 2001-06-07 | Bosch Gmbh Robert | Verfahren zur Herstellung von Kompositschichten mit einer Plasmastrahlquelle |
| JP4743730B2 (ja) * | 2000-08-07 | 2011-08-10 | 吉田 豊信 | 熱プラズマｃｖｄによるシリコン薄膜の堆積方法 |
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| DE10104614A1 (de) * | 2001-02-02 | 2002-08-22 | Bosch Gmbh Robert | Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung |
| DE10104615A1 (de) * | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Verfahren zur Erzeugung einer Funktionsbeschichtung mit einer HF-ICP-Plasmastrahlquelle |
| JP4549553B2 (ja) * | 2001-02-19 | 2010-09-22 | 吉田 豊信 | 熱プラズマを用いた成膜装置 |
| DE10230847B3 (de) * | 2002-07-04 | 2004-02-05 | Universität Stuttgart Institut für Fertigungstechnologie keramischer Bauteile | Verfahren und Vorrichtung zur Innenbeschichtung von Hohlräumen durch thermisches Spritzen |
| EP1479788B1 (fr) | 2003-05-23 | 2007-11-28 | Sulzer Metco AG | Procédé hybride thermique pour le dépôt d'un revêtment sur un substrat |
| CA2460296C (fr) * | 2003-05-23 | 2012-02-14 | Sulzer Metco Ag | Methode hybride de revetement de substrat par enduction thermique |
| US20050009373A1 (en) * | 2003-07-11 | 2005-01-13 | Tien-I Bao | Semiconductor device and method for preventing damage to anti-reflective structure during removing an overlying photoresist layer |
| DE102004013306A1 (de) * | 2004-03-17 | 2005-10-06 | Behr Gmbh & Co. Kg | Beschichtungsverfahren |
| JP4983091B2 (ja) * | 2006-05-02 | 2012-07-25 | 東京エレクトロン株式会社 | 電解質膜の形成方法、成膜装置及び固体燃料電池 |
| CA2750789C (fr) * | 2009-02-05 | 2018-12-04 | Sulzer Metco Ag | Installation de revetement au plasma, et procede de revetement ou de traitement de surface d'un substrat |
-
2009
- 2009-03-12 CA CA002658210A patent/CA2658210A1/fr not_active Abandoned
- 2009-03-17 EP EP09155381A patent/EP2107131A1/fr not_active Withdrawn
- 2009-03-24 JP JP2009071395A patent/JP2009249741A/ja active Pending
- 2009-04-03 US US12/418,014 patent/US20090252945A1/en not_active Abandoned
- 2009-04-03 CN CNA2009101304107A patent/CN101550527A/zh active Pending
-
2017
- 2017-03-29 KR KR1020170040089A patent/KR20170038778A/ko not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111111961A (zh) * | 2019-12-29 | 2020-05-08 | 苏州路之遥科技股份有限公司 | 一种马桶圈用ptc加热材料的喷涂装置及喷涂方法 |
| CN111111961B (zh) * | 2019-12-29 | 2021-07-16 | 苏州路之遥科技股份有限公司 | 一种马桶圈用ptc加热材料的喷涂装置及喷涂方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009249741A (ja) | 2009-10-29 |
| US20090252945A1 (en) | 2009-10-08 |
| CN101550527A (zh) | 2009-10-07 |
| KR20170038778A (ko) | 2017-04-07 |
| EP2107131A1 (fr) | 2009-10-07 |
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Legal Events
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| EEER | Examination request |
Effective date: 20140304 |
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| FZDE | Discontinued |
Effective date: 20181224 |