CA2353496C - Scalable data processing apparatus - Google Patents

Scalable data processing apparatus Download PDF

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Publication number
CA2353496C
CA2353496C CA002353496A CA2353496A CA2353496C CA 2353496 C CA2353496 C CA 2353496C CA 002353496 A CA002353496 A CA 002353496A CA 2353496 A CA2353496 A CA 2353496A CA 2353496 C CA2353496 C CA 2353496C
Authority
CA
Canada
Prior art keywords
thin
film
interface
memory
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002353496A
Other languages
English (en)
French (fr)
Other versions
CA2353496A1 (en
Inventor
Hans Gude Gudesen
Per-Erik Nordal
Geirr I. Leistad
Rolf Magnus Berggren
Johan Roger Axel Karlsson
Bengt Goran Gustafsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics ASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO985707A external-priority patent/NO985707L/no
Application filed by Thin Film Electronics ASA filed Critical Thin Film Electronics ASA
Publication of CA2353496A1 publication Critical patent/CA2353496A1/en
Application granted granted Critical
Publication of CA2353496C publication Critical patent/CA2353496C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
CA002353496A 1998-12-04 1999-12-03 Scalable data processing apparatus Expired - Fee Related CA2353496C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO19985707 1998-12-04
NO985707A NO985707L (no) 1998-06-02 1998-12-04 Skalerbar datalagringsinnretning
PCT/NO1999/000365 WO2000038234A1 (en) 1998-12-04 1999-12-03 Scalable data processing apparatus

Publications (2)

Publication Number Publication Date
CA2353496A1 CA2353496A1 (en) 2000-06-29
CA2353496C true CA2353496C (en) 2007-11-13

Family

ID=19902694

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002353496A Expired - Fee Related CA2353496C (en) 1998-12-04 1999-12-03 Scalable data processing apparatus

Country Status (10)

Country Link
US (1) US6541869B1 (enExample)
EP (1) EP1135807A1 (enExample)
JP (1) JP3825257B2 (enExample)
KR (1) KR100437925B1 (enExample)
CN (1) CN1160792C (enExample)
AU (1) AU764850B2 (enExample)
CA (1) CA2353496C (enExample)
HK (1) HK1041982B (enExample)
RU (1) RU2201639C1 (enExample)
WO (1) WO2000038234A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6950129B1 (en) 2000-11-22 2005-09-27 Hewlett-Packard Development Company, L.P. One-time-use digital camera
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
EP1302441B1 (en) * 2001-10-10 2007-01-03 Rohm And Haas Company An improved method for making lithium borohydride
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
EP1548833A4 (en) * 2002-08-19 2007-03-21 Seiko Epson Corp FERROELECTRIC STORAGE AND METHOD FOR THE PRODUCTION THEREOF
DE10308323B4 (de) * 2003-02-26 2007-10-11 Infineon Technologies Ag Halbleiterchipanordnung mit ROM
JP4411598B2 (ja) * 2004-09-30 2010-02-10 セイコーエプソン株式会社 転写元基板及び半導体装置の製造方法
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7898893B2 (en) * 2007-09-12 2011-03-01 Samsung Electronics Co., Ltd. Multi-layered memory devices
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
SG10201605470SA (en) 2012-01-23 2016-08-30 Semiconductor Energy Lab Co Ltd Semiconductor device
CN105632545B (zh) * 2015-03-27 2018-04-06 上海磁宇信息科技有限公司 一种3d内存芯片
WO2019132994A1 (en) * 2017-12-29 2019-07-04 Intel Corporation Memory arrays
CN109523921B (zh) * 2018-12-12 2021-07-23 上海天马有机发光显示技术有限公司 柔性显示面板和显示装置
WO2021070281A1 (ja) * 2019-10-09 2021-04-15 ウルトラメモリ株式会社 積層半導体、ウェハ積層体、積層半導体の製造方法、支援装置、及びプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186457A (ja) * 1987-01-29 1988-08-02 Hitachi Ltd 半導体装置及びその製造方法
JPH07112811B2 (ja) 1989-12-15 1995-12-06 美和ロック株式会社 車輌の盗難防止装置
RU2029391C1 (ru) * 1991-06-28 1995-02-20 Тимошков Юрий Викторович Элемент памяти
US5383269A (en) 1991-09-03 1995-01-24 Microelectronics And Computer Technology Corporation Method of making three dimensional integrated circuit interconnect module
US5375085A (en) 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
EP0721662A1 (en) * 1993-09-30 1996-07-17 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JPH088389A (ja) * 1994-04-20 1996-01-12 Fujitsu Ltd 半導体装置及び半導体装置ユニット
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
CA2218307C (en) * 1997-10-10 2006-01-03 Gennum Corporation Three dimensional packaging configuration for multi-chip module assembly
JP3876088B2 (ja) * 1999-01-29 2007-01-31 ローム株式会社 半導体チップおよびマルチチップ型半導体装置

Also Published As

Publication number Publication date
RU2001118285A (ru) 2004-03-10
KR20010080691A (ko) 2001-08-22
RU2201639C1 (ru) 2003-03-27
AU764850B2 (en) 2003-09-04
KR100437925B1 (ko) 2004-06-30
JP2002533928A (ja) 2002-10-08
CN1334963A (zh) 2002-02-06
WO2000038234A1 (en) 2000-06-29
CA2353496A1 (en) 2000-06-29
JP3825257B2 (ja) 2006-09-27
CN1160792C (zh) 2004-08-04
US6541869B1 (en) 2003-04-01
AU1699200A (en) 2000-07-12
HK1041982B (zh) 2005-04-29
EP1135807A1 (en) 2001-09-26
HK1041982A1 (en) 2002-07-26

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Effective date: 20091203