JP3825257B2 - 容量増大化可能なデータ処理装置 - Google Patents

容量増大化可能なデータ処理装置 Download PDF

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Publication number
JP3825257B2
JP3825257B2 JP2000590213A JP2000590213A JP3825257B2 JP 3825257 B2 JP3825257 B2 JP 3825257B2 JP 2000590213 A JP2000590213 A JP 2000590213A JP 2000590213 A JP2000590213 A JP 2000590213A JP 3825257 B2 JP3825257 B2 JP 3825257B2
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Prior art keywords
thin film
data processing
memory
film device
interface
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Expired - Fee Related
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JP2000590213A
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English (en)
Japanese (ja)
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JP2002533928A (ja
JP2002533928A5 (enExample
Inventor
グデセン、ハンス、グデ
− エリク ノルダル、ペル
レイスタド、ゲイル、アイ
ベルグレン、ロルフ、マグヌス
カールソン、ヨハン、ロジャー、アクセル
グスタフソン、ベングト、ゴーラン
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シン フイルム エレクトロニクス エイエスエイ
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Priority claimed from NO985707A external-priority patent/NO985707L/no
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Publication of JP2002533928A publication Critical patent/JP2002533928A/ja
Publication of JP2002533928A5 publication Critical patent/JP2002533928A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP2000590213A 1998-12-04 1999-12-03 容量増大化可能なデータ処理装置 Expired - Fee Related JP3825257B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO19985707 1998-12-04
NO985707A NO985707L (no) 1998-06-02 1998-12-04 Skalerbar datalagringsinnretning
PCT/NO1999/000365 WO2000038234A1 (en) 1998-12-04 1999-12-03 Scalable data processing apparatus

Publications (3)

Publication Number Publication Date
JP2002533928A JP2002533928A (ja) 2002-10-08
JP2002533928A5 JP2002533928A5 (enExample) 2006-07-13
JP3825257B2 true JP3825257B2 (ja) 2006-09-27

Family

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Application Number Title Priority Date Filing Date
JP2000590213A Expired - Fee Related JP3825257B2 (ja) 1998-12-04 1999-12-03 容量増大化可能なデータ処理装置

Country Status (10)

Country Link
US (1) US6541869B1 (enExample)
EP (1) EP1135807A1 (enExample)
JP (1) JP3825257B2 (enExample)
KR (1) KR100437925B1 (enExample)
CN (1) CN1160792C (enExample)
AU (1) AU764850B2 (enExample)
CA (1) CA2353496C (enExample)
HK (1) HK1041982B (enExample)
RU (1) RU2201639C1 (enExample)
WO (1) WO2000038234A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device

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US6950129B1 (en) 2000-11-22 2005-09-27 Hewlett-Packard Development Company, L.P. One-time-use digital camera
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
EP1302441B1 (en) * 2001-10-10 2007-01-03 Rohm And Haas Company An improved method for making lithium borohydride
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
EP1548833A4 (en) * 2002-08-19 2007-03-21 Seiko Epson Corp FERROELECTRIC STORAGE AND METHOD FOR THE PRODUCTION THEREOF
DE10308323B4 (de) * 2003-02-26 2007-10-11 Infineon Technologies Ag Halbleiterchipanordnung mit ROM
JP4411598B2 (ja) * 2004-09-30 2010-02-10 セイコーエプソン株式会社 転写元基板及び半導体装置の製造方法
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7898893B2 (en) * 2007-09-12 2011-03-01 Samsung Electronics Co., Ltd. Multi-layered memory devices
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
SG10201605470SA (en) 2012-01-23 2016-08-30 Semiconductor Energy Lab Co Ltd Semiconductor device
CN105632545B (zh) * 2015-03-27 2018-04-06 上海磁宇信息科技有限公司 一种3d内存芯片
WO2019132994A1 (en) * 2017-12-29 2019-07-04 Intel Corporation Memory arrays
CN109523921B (zh) * 2018-12-12 2021-07-23 上海天马有机发光显示技术有限公司 柔性显示面板和显示装置
WO2021070281A1 (ja) * 2019-10-09 2021-04-15 ウルトラメモリ株式会社 積層半導体、ウェハ積層体、積層半導体の製造方法、支援装置、及びプログラム

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JPS63186457A (ja) * 1987-01-29 1988-08-02 Hitachi Ltd 半導体装置及びその製造方法
JPH07112811B2 (ja) 1989-12-15 1995-12-06 美和ロック株式会社 車輌の盗難防止装置
RU2029391C1 (ru) * 1991-06-28 1995-02-20 Тимошков Юрий Викторович Элемент памяти
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US5375085A (en) 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
EP0721662A1 (en) * 1993-09-30 1996-07-17 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JPH088389A (ja) * 1994-04-20 1996-01-12 Fujitsu Ltd 半導体装置及び半導体装置ユニット
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device

Also Published As

Publication number Publication date
RU2001118285A (ru) 2004-03-10
KR20010080691A (ko) 2001-08-22
RU2201639C1 (ru) 2003-03-27
AU764850B2 (en) 2003-09-04
KR100437925B1 (ko) 2004-06-30
JP2002533928A (ja) 2002-10-08
CN1334963A (zh) 2002-02-06
WO2000038234A1 (en) 2000-06-29
CA2353496A1 (en) 2000-06-29
CN1160792C (zh) 2004-08-04
US6541869B1 (en) 2003-04-01
AU1699200A (en) 2000-07-12
HK1041982B (zh) 2005-04-29
CA2353496C (en) 2007-11-13
EP1135807A1 (en) 2001-09-26
HK1041982A1 (en) 2002-07-26

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