JP2002533928A5 - - Google Patents

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Publication number
JP2002533928A5
JP2002533928A5 JP2000590213A JP2000590213A JP2002533928A5 JP 2002533928 A5 JP2002533928 A5 JP 2002533928A5 JP 2000590213 A JP2000590213 A JP 2000590213A JP 2000590213 A JP2000590213 A JP 2000590213A JP 2002533928 A5 JP2002533928 A5 JP 2002533928A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000590213A
Other languages
Japanese (ja)
Other versions
JP2002533928A (ja
JP3825257B2 (ja
Filing date
Publication date
Priority claimed from NO985707A external-priority patent/NO985707L/no
Application filed filed Critical
Priority claimed from PCT/NO1999/000365 external-priority patent/WO2000038234A1/en
Publication of JP2002533928A publication Critical patent/JP2002533928A/ja
Publication of JP2002533928A5 publication Critical patent/JP2002533928A5/ja
Application granted granted Critical
Publication of JP3825257B2 publication Critical patent/JP3825257B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000590213A 1998-12-04 1999-12-03 容量増大化可能なデータ処理装置 Expired - Fee Related JP3825257B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO19985707 1998-12-04
NO985707A NO985707L (no) 1998-06-02 1998-12-04 Skalerbar datalagringsinnretning
PCT/NO1999/000365 WO2000038234A1 (en) 1998-12-04 1999-12-03 Scalable data processing apparatus

Publications (3)

Publication Number Publication Date
JP2002533928A JP2002533928A (ja) 2002-10-08
JP2002533928A5 true JP2002533928A5 (enExample) 2006-07-13
JP3825257B2 JP3825257B2 (ja) 2006-09-27

Family

ID=19902694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000590213A Expired - Fee Related JP3825257B2 (ja) 1998-12-04 1999-12-03 容量増大化可能なデータ処理装置

Country Status (10)

Country Link
US (1) US6541869B1 (enExample)
EP (1) EP1135807A1 (enExample)
JP (1) JP3825257B2 (enExample)
KR (1) KR100437925B1 (enExample)
CN (1) CN1160792C (enExample)
AU (1) AU764850B2 (enExample)
CA (1) CA2353496C (enExample)
HK (1) HK1041982B (enExample)
RU (1) RU2201639C1 (enExample)
WO (1) WO2000038234A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6950129B1 (en) 2000-11-22 2005-09-27 Hewlett-Packard Development Company, L.P. One-time-use digital camera
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
EP1302441B1 (en) * 2001-10-10 2007-01-03 Rohm And Haas Company An improved method for making lithium borohydride
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
EP1548833A4 (en) * 2002-08-19 2007-03-21 Seiko Epson Corp FERROELECTRIC STORAGE AND METHOD FOR THE PRODUCTION THEREOF
DE10308323B4 (de) * 2003-02-26 2007-10-11 Infineon Technologies Ag Halbleiterchipanordnung mit ROM
JP4411598B2 (ja) * 2004-09-30 2010-02-10 セイコーエプソン株式会社 転写元基板及び半導体装置の製造方法
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7898893B2 (en) * 2007-09-12 2011-03-01 Samsung Electronics Co., Ltd. Multi-layered memory devices
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
SG10201605470SA (en) 2012-01-23 2016-08-30 Semiconductor Energy Lab Co Ltd Semiconductor device
CN105632545B (zh) * 2015-03-27 2018-04-06 上海磁宇信息科技有限公司 一种3d内存芯片
WO2019132994A1 (en) * 2017-12-29 2019-07-04 Intel Corporation Memory arrays
CN109523921B (zh) * 2018-12-12 2021-07-23 上海天马有机发光显示技术有限公司 柔性显示面板和显示装置
WO2021070281A1 (ja) * 2019-10-09 2021-04-15 ウルトラメモリ株式会社 積層半導体、ウェハ積層体、積層半導体の製造方法、支援装置、及びプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186457A (ja) * 1987-01-29 1988-08-02 Hitachi Ltd 半導体装置及びその製造方法
JPH07112811B2 (ja) 1989-12-15 1995-12-06 美和ロック株式会社 車輌の盗難防止装置
RU2029391C1 (ru) * 1991-06-28 1995-02-20 Тимошков Юрий Викторович Элемент памяти
US5383269A (en) 1991-09-03 1995-01-24 Microelectronics And Computer Technology Corporation Method of making three dimensional integrated circuit interconnect module
US5375085A (en) 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
EP0721662A1 (en) * 1993-09-30 1996-07-17 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JPH088389A (ja) * 1994-04-20 1996-01-12 Fujitsu Ltd 半導体装置及び半導体装置ユニット
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
CA2218307C (en) * 1997-10-10 2006-01-03 Gennum Corporation Three dimensional packaging configuration for multi-chip module assembly
JP3876088B2 (ja) * 1999-01-29 2007-01-31 ローム株式会社 半導体チップおよびマルチチップ型半導体装置

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