CA2322714A1 - Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe - Google Patents

Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe Download PDF

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Publication number
CA2322714A1
CA2322714A1 CA002322714A CA2322714A CA2322714A1 CA 2322714 A1 CA2322714 A1 CA 2322714A1 CA 002322714 A CA002322714 A CA 002322714A CA 2322714 A CA2322714 A CA 2322714A CA 2322714 A1 CA2322714 A1 CA 2322714A1
Authority
CA
Canada
Prior art keywords
article
alloy
noble metal
metal elements
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002322714A
Other languages
English (en)
Inventor
Ainissa G. Ramirez
Jungsang Kim
Robert Bruce Van Dover
David John Bishop
Sungho Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of CA2322714A1 publication Critical patent/CA2322714A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material
    • H01H1/023—Composite material having a noble metal as the basic material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material
    • H01H1/027—Composite material containing carbon particles or fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H2300/00—Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
    • H01H2300/036—Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale
CA002322714A 1999-10-25 2000-10-10 Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe Abandoned CA2322714A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US16129199P 1999-10-25 1999-10-25
US16129099P 1999-10-25 1999-10-25
US60/161,290 1999-10-25
US60/161,291 1999-10-25
US48462700A 2000-01-18 2000-01-18
US09/484,627 2000-01-18

Publications (1)

Publication Number Publication Date
CA2322714A1 true CA2322714A1 (fr) 2001-04-25

Family

ID=27388589

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002322714A Abandoned CA2322714A1 (fr) 1999-10-25 2000-10-10 Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe

Country Status (5)

Country Link
US (1) US20010008157A1 (fr)
EP (1) EP1096523A3 (fr)
JP (1) JP2001158926A (fr)
KR (1) KR20010040170A (fr)
CA (1) CA2322714A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110976887A (zh) * 2019-12-17 2020-04-10 哈尔滨东大高新材料股份有限公司 AgWC（T）/CuC（X）触头材料及其制备方法

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071520B2 (en) 2000-08-23 2006-07-04 Reflectivity, Inc MEMS with flexible portions made of novel materials
US7057246B2 (en) 2000-08-23 2006-06-06 Reflectivity, Inc Transition metal dielectric alloy materials for MEMS
US7057251B2 (en) * 2001-07-20 2006-06-06 Reflectivity, Inc MEMS device made of transition metal-dielectric oxide materials
EP1320111A1 (fr) * 2001-12-11 2003-06-18 Abb Research Ltd. Contact de nanotube en carbon pour un MEMS
US7244367B2 (en) 2001-12-11 2007-07-17 Jds Uniphase Corporation Metal alloy elements in micromachined devices
JP3955795B2 (ja) * 2002-06-12 2007-08-08 株式会社ルネサステクノロジ 半導体装置の製造方法
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
DE10245343A1 (de) * 2002-09-27 2004-04-08 Robert Bosch Gmbh Elektrischer Kontakt
JP2004319410A (ja) * 2003-04-21 2004-11-11 Mitsubishi Materials Corp マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット
JP2004319411A (ja) * 2003-04-21 2004-11-11 Mitsubishi Materials Corp マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット
JP2004319409A (ja) * 2003-04-21 2004-11-11 Mitsubishi Materials Corp マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット
JP2004362801A (ja) * 2003-06-02 2004-12-24 Aisan Ind Co Ltd 粉末組成物、粉末組成物の製造方法及び製造装置
US7081647B2 (en) * 2003-09-29 2006-07-25 Matsushita Electric Industrial Co., Ltd. Microelectromechanical system and method for fabricating the same
US7959830B2 (en) * 2003-12-31 2011-06-14 The Regents Of The University Of California Articles comprising high-electrical-conductivity nanocomposite material and method for fabricating same
JP4044926B2 (ja) * 2004-12-20 2008-02-06 株式会社エルグ 表面処理方法及び接点部材
JP4438685B2 (ja) * 2005-05-23 2010-03-24 セイコーエプソン株式会社 透明導電膜とその形成方法、電気光学装置、及び電子機器
DE102005044522B4 (de) * 2005-09-16 2010-02-11 Schott Ag Verfahren zum Aufbringen einer porösen Glasschicht, sowie Verbundmaterial und dessen Verwendung
CA2560030C (fr) * 2005-11-24 2013-11-12 Sulzer Metco Ag Materiel et methode de metallisation au pistolet, et revetement et piece metallises au pistolet
US20070135552A1 (en) * 2005-12-09 2007-06-14 General Atomics Gas barrier
WO2007118337A1 (fr) * 2006-04-13 2007-10-25 Abb Research Ltd Ensemble de contacts électriques
DE102006027821A1 (de) * 2006-06-16 2007-12-27 Siemens Ag Elektrischer Schaltkontakt
US20080294372A1 (en) * 2007-01-26 2008-11-27 Herbert Dennis Hunt Projection facility within an analytic platform
JP4906165B2 (ja) * 2007-07-31 2012-03-28 株式会社デンソー 内燃機関用のスパークプラグ
FR2930370B1 (fr) * 2008-04-18 2011-08-26 Thales Sa Composants microsystemes comportant une membrane comprenant des nanotubes.
US8845867B2 (en) * 2008-12-09 2014-09-30 Tdk Corporation Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO
KR101803554B1 (ko) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR20170076818A (ko) * 2009-11-13 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
WO2011058882A1 (fr) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Cible de pulvérisation cathodique et procédé pour fabriquer celle-ci, et transistor
WO2012076281A1 (fr) * 2010-12-06 2012-06-14 Abb Research Ltd Élément de contact électrique et contact électrique
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US20140319432A1 (en) * 2013-04-24 2014-10-30 Sandia Corporation Wear-Resistant Nanocrystalline Hard Noble Metal Coating
EP3070182B1 (fr) * 2015-03-17 2017-08-30 The Swatch Group Research and Development Ltd. Alliage d'or gris
WO2018157160A1 (fr) 2017-02-27 2018-08-30 Nanovation Partners LLC Systèmes d'implant nanostructuré à durée de vie améliorée et procédés
US10763000B1 (en) * 2017-05-03 2020-09-01 National Technology & Engineering Solutions Of Sandia, Llc Stable nanocrystalline metal alloy coatings with ultra-low wear
CN108754212A (zh) * 2018-05-15 2018-11-06 雷山县弘悦银饰有限责任公司 一种银饰补口材料及其制备方法
CN112366107B (zh) * 2020-11-11 2021-12-10 福达合金材料股份有限公司 一种银金属氧化物片状电触头制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2272063A (en) * 1939-06-05 1942-02-03 Mallory & Co Inc P R Electric contacting member
GB534407A (en) * 1940-01-02 1941-03-06 Mallory & Co Inc P R Improvements in and relating to silver-base alloys or mixtures and make-and-break contacts thereof
DE1077435B (de) * 1957-02-13 1960-03-10 Heraeus Gmbh W C Verwendung von Rhodium-Nickel-Legierungen als Werkstoff fuer elektrische Kontakte
US4911769A (en) * 1987-03-25 1990-03-27 Matsushita Electric Works, Ltd. Composite conductive material
US4826808A (en) * 1987-03-27 1989-05-02 Massachusetts Institute Of Technology Preparation of superconducting oxides and oxide-metal composites
US5139891A (en) * 1991-07-01 1992-08-18 Olin Corporation Palladium alloys having utility in electrical applications
US5833774A (en) * 1997-04-10 1998-11-10 The J. M. Ney Company High strength silver palladium alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110976887A (zh) * 2019-12-17 2020-04-10 哈尔滨东大高新材料股份有限公司 AgWC（T）/CuC（X）触头材料及其制备方法

Also Published As

Publication number Publication date
US20010008157A1 (en) 2001-07-19
JP2001158926A (ja) 2001-06-12
EP1096523A2 (fr) 2001-05-02
KR20010040170A (ko) 2001-05-15
EP1096523A3 (fr) 2003-06-18

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