CA2119547A1 - Semiconductor device capacitor and method for manufacturing the same - Google Patents

Semiconductor device capacitor and method for manufacturing the same

Info

Publication number
CA2119547A1
CA2119547A1 CA002119547A CA2119547A CA2119547A1 CA 2119547 A1 CA2119547 A1 CA 2119547A1 CA 002119547 A CA002119547 A CA 002119547A CA 2119547 A CA2119547 A CA 2119547A CA 2119547 A1 CA2119547 A1 CA 2119547A1
Authority
CA
Canada
Prior art keywords
capacitor
semiconductor device
manufacturing
storage electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002119547A
Other languages
English (en)
French (fr)
Inventor
Yong-Jin Choi
Tae-Woo Lee
Yong-Chul Oh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Yong-Jin Choi
Tae-Woo Lee
Yong-Chul Oh
Samsung Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yong-Jin Choi, Tae-Woo Lee, Yong-Chul Oh, Samsung Electronics Co., Ltd. filed Critical Yong-Jin Choi
Publication of CA2119547A1 publication Critical patent/CA2119547A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
    • C07D417/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings
    • C07D417/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings linked by a chain containing hetero atoms as chain links

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA002119547A 1993-03-22 1994-03-21 Semiconductor device capacitor and method for manufacturing the same Abandoned CA2119547A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR93-4396 1993-03-22
KR1019930004396A KR940022841A (ko) 1993-03-22 1993-03-22 반도체장치의 커패시터 및 그 제조방법

Publications (1)

Publication Number Publication Date
CA2119547A1 true CA2119547A1 (en) 1994-09-23

Family

ID=19352552

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002119547A Abandoned CA2119547A1 (en) 1993-03-22 1994-03-21 Semiconductor device capacitor and method for manufacturing the same

Country Status (5)

Country Link
JP (1) JPH077088A (de)
KR (1) KR940022841A (de)
CA (1) CA2119547A1 (de)
DE (1) DE4409718A1 (de)
GB (1) GB2276980A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1044948C (zh) * 1994-06-22 1999-09-01 现代电子产业株式会社 用于制造半导体器件叠层电容器的方法
KR0180779B1 (ko) * 1995-02-27 1999-03-20 김주용 반도체소자의 캐패시터 제조방법
GB2321779A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Semiconductor memory device having a capacitor
JPH11186524A (ja) 1997-12-24 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100537195B1 (ko) * 1998-06-29 2006-05-12 주식회사 하이닉스반도체 반도체 메모리장치의 커패시터 제조방법
KR100434496B1 (ko) 2001-12-11 2004-06-05 삼성전자주식회사 단일 실린더 스택형 커패시터 및 이중 몰드를 이용한 제조방법
GB2386471B (en) * 2001-12-11 2004-04-07 Samsung Electronics Co Ltd A method for fabricating a one-cylinder stack capacitor
CN113725165B (zh) * 2021-08-30 2023-07-11 长鑫存储技术有限公司 半导体结构及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2504606B2 (ja) * 1990-05-18 1996-06-05 株式会社東芝 半導体記憶装置およびその製造方法
KR920001760A (ko) * 1990-06-29 1992-01-30 김광호 디램셀의 적층형 캐패시터 제조방법

Also Published As

Publication number Publication date
DE4409718A1 (de) 1994-09-29
KR940022841A (ko) 1994-10-21
GB2276980A (en) 1994-10-12
GB9405612D0 (en) 1994-05-11
JPH077088A (ja) 1995-01-10

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Legal Events

Date Code Title Description
FZDE Discontinued