GB9405612D0 - Semiconductor device capacitor and method for manufacturing the same - Google Patents
Semiconductor device capacitor and method for manufacturing the sameInfo
- Publication number
- GB9405612D0 GB9405612D0 GB9405612A GB9405612A GB9405612D0 GB 9405612 D0 GB9405612 D0 GB 9405612D0 GB 9405612 A GB9405612 A GB 9405612A GB 9405612 A GB9405612 A GB 9405612A GB 9405612 D0 GB9405612 D0 GB 9405612D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- same
- semiconductor device
- device capacitor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
- C07D417/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings
- C07D417/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings linked by a chain containing hetero atoms as chain links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930004396A KR940022841A (en) | 1993-03-22 | 1993-03-22 | Capacitor of Semiconductor Device and Manufacturing Method Thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9405612D0 true GB9405612D0 (en) | 1994-05-11 |
| GB2276980A GB2276980A (en) | 1994-10-12 |
Family
ID=19352552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9405612A Withdrawn GB2276980A (en) | 1993-03-22 | 1994-03-22 | Semiconductor device stacked capacitor and method of manufacture |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH077088A (en) |
| KR (1) | KR940022841A (en) |
| CA (1) | CA2119547A1 (en) |
| DE (1) | DE4409718A1 (en) |
| GB (1) | GB2276980A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725165A (en) * | 2021-08-30 | 2021-11-30 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044948C (en) * | 1994-06-22 | 1999-09-01 | 现代电子产业株式会社 | Method for fabricating stack capacitor of semiconductor device |
| KR0180779B1 (en) * | 1995-02-27 | 1999-03-20 | 김주용 | Method for manufacturing semiconductor capacitor |
| GB2321779A (en) * | 1996-08-16 | 1998-08-05 | United Microelectronics Corp | Semiconductor memory device having a capacitor |
| JPH11186524A (en) | 1997-12-24 | 1999-07-09 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| KR100537195B1 (en) * | 1998-06-29 | 2006-05-12 | 주식회사 하이닉스반도체 | Capacitor Manufacturing Method of Semiconductor Memory Device |
| GB2386471B (en) | 2001-12-11 | 2004-04-07 | Samsung Electronics Co Ltd | A method for fabricating a one-cylinder stack capacitor |
| KR100434496B1 (en) | 2001-12-11 | 2004-06-05 | 삼성전자주식회사 | One cylinder stack capacitor and fabrication method thereof using double mold |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2504606B2 (en) * | 1990-05-18 | 1996-06-05 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
| KR920001760A (en) * | 1990-06-29 | 1992-01-30 | 김광호 | Manufacturing method of stacked capacitor of DRAM cell |
-
1993
- 1993-03-22 KR KR1019930004396A patent/KR940022841A/en not_active Application Discontinuation
-
1994
- 1994-03-18 JP JP6049094A patent/JPH077088A/en active Pending
- 1994-03-21 CA CA002119547A patent/CA2119547A1/en not_active Abandoned
- 1994-03-22 GB GB9405612A patent/GB2276980A/en not_active Withdrawn
- 1994-03-22 DE DE4409718A patent/DE4409718A1/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725165A (en) * | 2021-08-30 | 2021-11-30 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
| CN113725165B (en) * | 2021-08-30 | 2023-07-11 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4409718A1 (en) | 1994-09-29 |
| KR940022841A (en) | 1994-10-21 |
| GB2276980A (en) | 1994-10-12 |
| CA2119547A1 (en) | 1994-09-23 |
| JPH077088A (en) | 1995-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |