CA2060561A1 - Capteur magnetoresistif utilisant les oscillations dans une magnetoresistance - Google Patents

Capteur magnetoresistif utilisant les oscillations dans une magnetoresistance

Info

Publication number
CA2060561A1
CA2060561A1 CA2060561A CA2060561A CA2060561A1 CA 2060561 A1 CA2060561 A1 CA 2060561A1 CA 2060561 A CA2060561 A CA 2060561A CA 2060561 A CA2060561 A CA 2060561A CA 2060561 A1 CA2060561 A1 CA 2060561A1
Authority
CA
Canada
Prior art keywords
magnetoresistance
sensor
oscillations
sensor based
magnetoresistive sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2060561A
Other languages
English (en)
Other versions
CA2060561C (fr
Inventor
Stuart Stephen Papworth Parkin
Kevin Patrick Roche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
Stuart Stephen Papworth Parkin
Kevin Patrick Roche
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stuart Stephen Papworth Parkin, Kevin Patrick Roche, International Business Machines Corporation filed Critical Stuart Stephen Papworth Parkin
Publication of CA2060561A1 publication Critical patent/CA2060561A1/fr
Application granted granted Critical
Publication of CA2060561C publication Critical patent/CA2060561C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Magnetic Heads (AREA)
CA002060561A 1991-02-08 1992-02-03 Capteur magnetoresistif utilisant les oscillations dans une magnetoresistance Expired - Fee Related CA2060561C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65356791A 1991-02-08 1991-02-08
US07/653,567 1991-02-08

Publications (2)

Publication Number Publication Date
CA2060561A1 true CA2060561A1 (fr) 1992-08-09
CA2060561C CA2060561C (fr) 1998-05-05

Family

ID=24621406

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002060561A Expired - Fee Related CA2060561C (fr) 1991-02-08 1992-02-03 Capteur magnetoresistif utilisant les oscillations dans une magnetoresistance

Country Status (10)

Country Link
US (1) US5341118A (fr)
EP (1) EP0498640A3 (fr)
JP (1) JP2612988B2 (fr)
KR (1) KR960001289B1 (fr)
CN (1) CN1044044C (fr)
BR (1) BR9200322A (fr)
CA (1) CA2060561C (fr)
MY (1) MY108176A (fr)
SG (1) SG42852A1 (fr)
TW (1) TW211077B (fr)

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US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
US6590750B2 (en) 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5666248A (en) * 1996-09-13 1997-09-09 International Business Machines Corporation Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields
US5731936A (en) * 1996-09-26 1998-03-24 International Business Machines Corporation Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability
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US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US6337215B1 (en) * 1997-12-01 2002-01-08 International Business Machines Corporation Magnetic particles having two antiparallel ferromagnetic layers and attached affinity recognition molecules
US5920446A (en) * 1998-01-06 1999-07-06 International Business Machines Corporation Ultra high density GMR sensor
US6104633A (en) * 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
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US6197439B1 (en) 1999-01-28 2001-03-06 International Business Machines Corporation Laminated magnetic structures with ultra-thin transition metal spacer layers
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
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US6639763B1 (en) 2000-03-15 2003-10-28 Tdk Corporation Magnetic transducer and thin film magnetic head
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JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
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TWI452319B (zh) 2012-01-09 2014-09-11 Voltafield Technology Corp 磁阻感測元件
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Also Published As

Publication number Publication date
CA2060561C (fr) 1998-05-05
JP2612988B2 (ja) 1997-05-21
KR960001289B1 (ko) 1996-01-25
BR9200322A (pt) 1992-10-13
MY108176A (en) 1996-08-30
KR920017027A (ko) 1992-09-26
JPH04360009A (ja) 1992-12-14
US5341118A (en) 1994-08-23
EP0498640A3 (en) 1993-10-13
TW211077B (fr) 1993-08-11
EP0498640A2 (fr) 1992-08-12
SG42852A1 (en) 1997-10-17
CN1063960A (zh) 1992-08-26
CN1044044C (zh) 1999-07-07

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