BR9200322A - Sistema de deteccao magnetorresistiva e sensor magnetorresistivo - Google Patents

Sistema de deteccao magnetorresistiva e sensor magnetorresistivo

Info

Publication number
BR9200322A
BR9200322A BR929200322A BR9200322A BR9200322A BR 9200322 A BR9200322 A BR 9200322A BR 929200322 A BR929200322 A BR 929200322A BR 9200322 A BR9200322 A BR 9200322A BR 9200322 A BR9200322 A BR 9200322A
Authority
BR
Brazil
Prior art keywords
magnetorresistive
sensor
detection system
detection
magnetorresistive sensor
Prior art date
Application number
BR929200322A
Other languages
English (en)
Inventor
Stuart S Papworth Parkin
Kevin P Roche
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR9200322A publication Critical patent/BR9200322A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
BR929200322A 1991-02-08 1992-01-31 Sistema de deteccao magnetorresistiva e sensor magnetorresistivo BR9200322A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65356791A 1991-02-08 1991-02-08

Publications (1)

Publication Number Publication Date
BR9200322A true BR9200322A (pt) 1992-10-13

Family

ID=24621406

Family Applications (1)

Application Number Title Priority Date Filing Date
BR929200322A BR9200322A (pt) 1991-02-08 1992-01-31 Sistema de deteccao magnetorresistiva e sensor magnetorresistivo

Country Status (10)

Country Link
US (1) US5341118A (pt)
EP (1) EP0498640A3 (pt)
JP (1) JP2612988B2 (pt)
KR (1) KR960001289B1 (pt)
CN (1) CN1044044C (pt)
BR (1) BR9200322A (pt)
CA (1) CA2060561C (pt)
MY (1) MY108176A (pt)
SG (1) SG42852A1 (pt)
TW (1) TW211077B (pt)

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JP2629583B2 (ja) * 1993-05-13 1997-07-09 日本電気株式会社 磁気抵抗効果膜およびその製造方法
DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur
US5475304A (en) * 1993-10-01 1995-12-12 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall
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JPH0950613A (ja) * 1995-08-03 1997-02-18 Sony Corp 磁気抵抗効果素子及び磁界検出装置
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US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
US6590750B2 (en) 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5666248A (en) * 1996-09-13 1997-09-09 International Business Machines Corporation Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields
US5731936A (en) * 1996-09-26 1998-03-24 International Business Machines Corporation Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability
US5936400A (en) * 1996-12-23 1999-08-10 Federal Products Co. Magnetoresistive displacement sensor and variable resistor using a moving domain wall
US5976681A (en) * 1997-06-30 1999-11-02 Ford Global Technologies, Inc. Giant magnetoresistors with high sensitivity and reduced hysteresis
US6404191B2 (en) * 1997-08-08 2002-06-11 Nve Corporation Read heads in planar monolithic integrated circuit chips
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
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US5920446A (en) * 1998-01-06 1999-07-06 International Business Machines Corporation Ultra high density GMR sensor
US6104633A (en) 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
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US6197439B1 (en) 1999-01-28 2001-03-06 International Business Machines Corporation Laminated magnetic structures with ultra-thin transition metal spacer layers
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
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US6669983B2 (en) 2001-10-25 2003-12-30 Tdk Corporation Manufacturing method of thin-film magnetic head with magnetoresistive effect element
JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
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JP3695459B2 (ja) * 2003-10-30 2005-09-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法
US7190560B2 (en) 2004-02-18 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned CPP sensor using Fe/Cr/Fe structure
US7221545B2 (en) * 2004-02-18 2007-05-22 Hitachi Global Storage Technologies Netherlands B.V. High HC reference layer structure for self-pinned GMR heads
US8068315B2 (en) * 2007-09-26 2011-11-29 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers
TWI452319B (zh) * 2012-01-09 2014-09-11 Voltafield Technology Corp 磁阻感測元件
JP2015060970A (ja) * 2013-09-19 2015-03-30 株式会社東芝 磁気抵抗素子および磁気メモリ
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Also Published As

Publication number Publication date
US5341118A (en) 1994-08-23
CA2060561A1 (en) 1992-08-09
MY108176A (en) 1996-08-30
TW211077B (pt) 1993-08-11
KR920017027A (ko) 1992-09-26
JPH04360009A (ja) 1992-12-14
EP0498640A3 (en) 1993-10-13
JP2612988B2 (ja) 1997-05-21
CN1063960A (zh) 1992-08-26
SG42852A1 (en) 1997-10-17
CN1044044C (zh) 1999-07-07
EP0498640A2 (en) 1992-08-12
KR960001289B1 (ko) 1996-01-25
CA2060561C (en) 1998-05-05

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