CA2055306A1 - Fractions resiniques de silsesquioxane d'hydrogene et leur emploi comme produits de revetement - Google Patents
Fractions resiniques de silsesquioxane d'hydrogene et leur emploi comme produits de revetementInfo
- Publication number
- CA2055306A1 CA2055306A1 CA2055306A CA2055306A CA2055306A1 CA 2055306 A1 CA2055306 A1 CA 2055306A1 CA 2055306 A CA2055306 A CA 2055306A CA 2055306 A CA2055306 A CA 2055306A CA 2055306 A1 CA2055306 A1 CA 2055306A1
- Authority
- CA
- Canada
- Prior art keywords
- fractions
- hydrogen silsesquioxane
- silsesquioxane resin
- coating materials
- resin fractions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 title abstract 3
- 229920005989 resin Polymers 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005524 ceramic coating Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/32—Post-polymerisation treatment
- C08G77/36—Fractionation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Ceramic Products (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/618,865 US5063267A (en) | 1990-11-28 | 1990-11-28 | Hydrogen silsesquioxane resin fractions and their use as coating materials |
US618,865 | 1990-11-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2055306A1 true CA2055306A1 (fr) | 1992-05-29 |
CA2055306C CA2055306C (fr) | 1996-06-18 |
Family
ID=24479445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002055306A Expired - Fee Related CA2055306C (fr) | 1990-11-28 | 1991-11-12 | Fractions resiniques de silsesquioxane d'hydrogene et leur emploi comme produits de revetement |
Country Status (8)
Country | Link |
---|---|
US (1) | US5063267A (fr) |
EP (1) | EP0493879B1 (fr) |
JP (1) | JPH04275337A (fr) |
KR (1) | KR960007346B1 (fr) |
CA (1) | CA2055306C (fr) |
DE (1) | DE69100590T2 (fr) |
ES (1) | ES2047987T3 (fr) |
TW (1) | TW218858B (fr) |
Families Citing this family (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
JP2844896B2 (ja) * | 1990-10-17 | 1999-01-13 | 信越化学工業株式会社 | 耐熱性絶縁塗料 |
US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
US5436029A (en) * | 1992-07-13 | 1995-07-25 | Dow Corning Corporation | Curing silicon hydride containing materials by exposure to nitrous oxide |
CA2100277A1 (fr) * | 1992-07-20 | 1994-01-21 | Loren Andrew Haluska | Scellement de substrats poreux pour materiel d'electronique |
US5310583A (en) * | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
JP3153367B2 (ja) * | 1992-11-24 | 2001-04-09 | ダウ・コ−ニング・コ−ポレ−ション | ポリハイドロジェンシルセスキオキサンの分子量分別方法 |
US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
TW492989B (en) * | 1993-03-19 | 2002-07-01 | Dow Corning | Stabilization of hydrogen silsesquioxane resin solutions |
US5320868A (en) * | 1993-09-13 | 1994-06-14 | Dow Corning Corporation | Method of forming SI-O containing coatings |
US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
US6423651B1 (en) * | 1993-12-27 | 2002-07-23 | Kawasaki Steel Corporation | Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film |
US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
MX9504934A (es) * | 1994-12-12 | 1997-01-31 | Morton Int Inc | Revestimientos en polvo de pelicula delgada lisa. |
US5501875A (en) | 1994-12-27 | 1996-03-26 | Dow Corning Corporation | Metal coated silica precursor powders |
JPH08245792A (ja) * | 1995-03-10 | 1996-09-24 | Mitsubishi Electric Corp | シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法 |
US5618878A (en) * | 1995-04-07 | 1997-04-08 | Dow Corning Corporation | Hydrogen silsesquioxane resin coating composition |
US5635240A (en) * | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
US5985229A (en) * | 1995-09-21 | 1999-11-16 | Toagosei Co., Ltd. | Solid silica derivative and process for producing the same |
US5609925A (en) | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
US5766522A (en) * | 1996-07-19 | 1998-06-16 | Morton International, Inc. | Continuous processing of powder coating compositions |
US6114414A (en) * | 1996-07-19 | 2000-09-05 | Morton International, Inc. | Continuous processing of powder coating compositions |
US6583187B1 (en) | 1996-07-19 | 2003-06-24 | Andrew T. Daly | Continuous processing of powder coating compositions |
US6075074A (en) * | 1996-07-19 | 2000-06-13 | Morton International, Inc. | Continuous processing of powder coating compositions |
US5711987A (en) * | 1996-10-04 | 1998-01-27 | Dow Corning Corporation | Electronic coatings |
US5807611A (en) * | 1996-10-04 | 1998-09-15 | Dow Corning Corporation | Electronic coatings |
US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
US20100273011A1 (en) * | 1996-12-20 | 2010-10-28 | Bianxiao Zhong | Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates |
DE19654488A1 (de) * | 1996-12-27 | 1998-07-02 | Sueddeutsche Kalkstickstoff | Verfahren zur Fraktionierung viscoser Silicone |
US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
EP0860462A3 (fr) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Composition et procédé pour la formation d'un film mince de silice |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6043330A (en) * | 1997-04-21 | 2000-03-28 | Alliedsignal Inc. | Synthesis of siloxane resins |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
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US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
US6340722B1 (en) | 1998-09-04 | 2002-01-22 | The University Of Akron | Polymerization, compatibilized blending, and particle size control of powder coatings in a supercritical fluid |
DE19848474C1 (de) | 1998-10-21 | 2000-01-13 | Bosch Gmbh Robert | Verfahren und Vorrichtung zur Herstellung keramischer Formkörper mittels Setterplatten und Verendung des Verfahrens zur Herstellung keramischer Mehrschichthybride |
CA2374944A1 (fr) * | 1999-06-10 | 2000-12-21 | Nigel Hacker | Enduit antireflet spin-on-glass pour photolithographie |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6572974B1 (en) | 1999-12-06 | 2003-06-03 | The Regents Of The University Of Michigan | Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins |
US6143360A (en) | 1999-12-13 | 2000-11-07 | Dow Corning Corporation | Method for making nanoporous silicone resins from alkylydridosiloxane resins |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
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US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
JP2001131479A (ja) * | 2000-10-30 | 2001-05-15 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液 |
USH2219H1 (en) * | 2000-10-31 | 2008-07-01 | The United States Of America As Represented By The Secretary Of The Navy | Method for coating small particles |
US6399210B1 (en) | 2000-11-27 | 2002-06-04 | Dow Corning Corporation | Alkoxyhydridosiloxane resins |
US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
FR2830856B1 (fr) * | 2001-10-15 | 2004-07-30 | Pechiney Aluminium | Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire |
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JP5085649B2 (ja) | 2006-06-28 | 2012-11-28 | ダウ コーニング コーポレーション | 電子吸引基を有する塩基性添加剤を含有するシルセスキオキサン樹脂システム |
KR101293937B1 (ko) * | 2006-06-28 | 2013-08-09 | 다우 코닝 코포레이션 | 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템 |
CN101501139B (zh) | 2006-08-04 | 2011-08-17 | 陶氏康宁公司 | 硅氧烷树脂和硅氧烷组合物 |
CN101563300B (zh) * | 2006-12-20 | 2012-09-05 | 陶氏康宁公司 | 用固化的有机硅树脂组合物涂布或层压的玻璃基底 |
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US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
EP2265674A1 (fr) * | 2008-03-04 | 2010-12-29 | Dow Corning Corporation | Composition de silicone, adhésif de silicone et substrats revêtus et laminés |
US8450442B2 (en) * | 2008-03-04 | 2013-05-28 | Dow Corning Corporation | Borosiloxane composition, borosiloxane adhesive, coated and laminated substrates |
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TW201004795A (en) * | 2008-07-31 | 2010-02-01 | Dow Corning | Laminated glass |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US9012547B2 (en) | 2010-11-09 | 2015-04-21 | Dow Corning Corporation | Hydrosilylation cured silicone resins plasticized by organophosphorous compounds |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
CN103842368B (zh) | 2011-09-20 | 2017-02-22 | 道康宁公司 | 含铱硅氢加成催化剂及含有该催化剂的组合物 |
CN103814038A (zh) | 2011-09-20 | 2014-05-21 | 道康宁公司 | 含钌硅氢加成催化剂及含有该催化剂的组合物 |
CN103814040B (zh) | 2011-09-20 | 2016-08-31 | 道康宁公司 | 含镍硅氢加成催化剂及含有该催化剂的组合物 |
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US10473822B2 (en) | 2014-04-09 | 2019-11-12 | Dow Silicones Corporation | Optical element |
DE112015001719T5 (de) | 2014-04-09 | 2016-12-29 | Dow Corning Corporation | Hydrophober Artikel |
EP3194502A4 (fr) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Formulations de polysiloxane et revêtements pour applications optoélectroniques |
WO2016204014A1 (fr) * | 2015-06-17 | 2016-12-22 | 株式会社ダイセル | Composition durcissable |
WO2017142648A1 (fr) | 2016-02-19 | 2017-08-24 | Dow Corning Corporation | Silsesquioxanes polymères vieillis |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
JPS5710627A (en) * | 1980-06-24 | 1982-01-20 | Hitachi Chem Co Ltd | Preparation of polysiloxane with fractionated molecular weight |
JP2513595B2 (ja) * | 1984-11-28 | 1996-07-03 | 富士通株式会社 | ラダ−型シリコン樹脂の分子量分別法 |
US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
EP0255226A3 (fr) * | 1986-06-26 | 1990-07-11 | Minnesota Mining And Manufacturing Company | Adhésif sensible à la pression à base de polysiloxane ayant des propriétés améliorées |
DE3760773D1 (en) * | 1986-07-25 | 1989-11-16 | Oki Electric Ind Co Ltd | Negative resist material, method for its manufacture and method for using it |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
JPH01203013A (ja) * | 1988-02-08 | 1989-08-15 | Fujitsu Ltd | 高分子化合物の分子量分別方法 |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
-
1990
- 1990-11-28 US US07/618,865 patent/US5063267A/en not_active Expired - Lifetime
-
1991
- 1991-10-21 TW TW080108285A patent/TW218858B/zh not_active IP Right Cessation
- 1991-11-12 CA CA002055306A patent/CA2055306C/fr not_active Expired - Fee Related
- 1991-11-13 EP EP91310448A patent/EP0493879B1/fr not_active Expired - Lifetime
- 1991-11-13 ES ES91310448T patent/ES2047987T3/es not_active Expired - Lifetime
- 1991-11-13 DE DE91310448T patent/DE69100590T2/de not_active Expired - Lifetime
- 1991-11-19 JP JP3303095A patent/JPH04275337A/ja active Granted
- 1991-11-26 KR KR1019910021202A patent/KR960007346B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69100590T2 (de) | 1994-05-11 |
JPH0579693B2 (fr) | 1993-11-04 |
EP0493879A2 (fr) | 1992-07-08 |
KR960007346B1 (ko) | 1996-05-31 |
DE69100590D1 (de) | 1993-12-09 |
ES2047987T3 (es) | 1994-03-01 |
JPH04275337A (ja) | 1992-09-30 |
KR920009891A (ko) | 1992-06-25 |
US5063267A (en) | 1991-11-05 |
EP0493879A3 (en) | 1992-09-30 |
TW218858B (fr) | 1994-01-11 |
CA2055306C (fr) | 1996-06-18 |
EP0493879B1 (fr) | 1993-11-03 |
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EEER | Examination request | ||
MKLA | Lapsed |