CA1245330A - Back reflector system and devices utilizing same - Google Patents
Back reflector system and devices utilizing sameInfo
- Publication number
- CA1245330A CA1245330A CA000423034A CA423034A CA1245330A CA 1245330 A CA1245330 A CA 1245330A CA 000423034 A CA000423034 A CA 000423034A CA 423034 A CA423034 A CA 423034A CA 1245330 A CA1245330 A CA 1245330A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- transparent
- oxide
- highly reflective
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims abstract description 86
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 76
- 239000000956 alloy Substances 0.000 claims abstract description 76
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 20
- 239000011737 fluorine Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229940071182 stannate Drugs 0.000 claims abstract description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 9
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 7
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 7
- 229940112669 cuprous oxide Drugs 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 6
- -1 HfNx Inorganic materials 0.000 claims description 5
- 150000004770 chalcogenides Chemical class 0.000 claims description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910010421 TiNx Inorganic materials 0.000 claims description 3
- 229910008328 ZrNx Inorganic materials 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 229910015617 MoNx Inorganic materials 0.000 claims description 2
- 229940044194 cadmium Drugs 0.000 claims 5
- 229960001296 zinc oxide Drugs 0.000 claims 4
- 229910008764 WNx Inorganic materials 0.000 claims 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 11
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000009102 absorption Effects 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052729 chemical element Inorganic materials 0.000 description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001188 F alloy Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229940116367 cadmium sulfide Drugs 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229940020445 flector Drugs 0.000 description 2
- YRNLXSUVDAMZLU-UHFFFAOYSA-N germanium;oxotin Chemical compound [Ge].[Sn]=O YRNLXSUVDAMZLU-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000036366 Sensation of pressure Diseases 0.000 description 1
- VDRSDNINOSAWIV-UHFFFAOYSA-N [F].[Si] Chemical compound [F].[Si] VDRSDNINOSAWIV-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000003138 coordinated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000005402 stannate group Chemical group 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35937182A | 1982-03-18 | 1982-03-18 | |
| US359,371 | 1982-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1245330A true CA1245330A (en) | 1988-11-22 |
Family
ID=23413524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000423034A Expired CA1245330A (en) | 1982-03-18 | 1983-03-07 | Back reflector system and devices utilizing same |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS58170075A (pt) |
| AU (1) | AU540909B2 (pt) |
| BR (1) | BR8301160A (pt) |
| CA (1) | CA1245330A (pt) |
| DE (1) | DE3308598A1 (pt) |
| FR (1) | FR2523768B1 (pt) |
| GB (1) | GB2116775B (pt) |
| IE (1) | IE54573B1 (pt) |
| IL (1) | IL67926A (pt) |
| IN (1) | IN161241B (pt) |
| IT (1) | IT1160506B (pt) |
| MX (1) | MX153416A (pt) |
| NL (1) | NL8300925A (pt) |
| SE (1) | SE457300B (pt) |
| ZA (1) | ZA831342B (pt) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58171869A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS58171870A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS6034076A (ja) * | 1983-08-05 | 1985-02-21 | Taiyo Yuden Co Ltd | 非晶質シリコン太陽電池 |
| AU4168285A (en) * | 1984-05-02 | 1985-11-07 | Energy Conversion Devices Inc. | Photoresponsive device incorporating improved back reflector |
| DE3502218A1 (de) * | 1985-01-24 | 1986-07-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Fuer photovoltaische solargeneratoren verwendbare solarzelle |
| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| JPH0656883B2 (ja) * | 1986-03-03 | 1994-07-27 | 鐘淵化学工業株式会社 | 半導体装置 |
| JPS62259480A (ja) * | 1986-05-01 | 1987-11-11 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPH01304786A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 光発電素子 |
| JPH0273672A (ja) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | 薄膜光電変換素子 |
| AU650782B2 (en) * | 1991-09-24 | 1994-06-30 | Canon Kabushiki Kaisha | Solar cell |
| JP2994812B2 (ja) * | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | 太陽電池 |
| JPH0677510A (ja) * | 1992-08-24 | 1994-03-18 | Canon Inc | 光起電力素子 |
| CN1096119C (zh) * | 1994-10-06 | 2002-12-11 | 钟渊化学工业株式会社 | 薄膜太阳能电池 |
| US5626687A (en) * | 1995-03-29 | 1997-05-06 | The United States Of America As Represented By The United States Department Of Energy | Thermophotovoltaic in-situ mirror cell |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| US20120318352A1 (en) * | 2011-06-14 | 2012-12-20 | General Electric Company | Photovoltaic device with reflection enhancing layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
| US3973994A (en) * | 1974-03-11 | 1976-08-10 | Rca Corporation | Solar cell with grooved surface |
| US3988167A (en) * | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| IT1092849B (it) * | 1977-03-28 | 1985-07-12 | Rca Corp | Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55125680A (en) | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
| DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
-
1983
- 1983-02-16 IL IL67926A patent/IL67926A/xx unknown
- 1983-02-22 IN IN211/CAL/83A patent/IN161241B/en unknown
- 1983-02-28 ZA ZA831342A patent/ZA831342B/xx unknown
- 1983-03-04 IT IT19923/83A patent/IT1160506B/it active
- 1983-03-07 CA CA000423034A patent/CA1245330A/en not_active Expired
- 1983-03-08 GB GB08306327A patent/GB2116775B/en not_active Expired
- 1983-03-08 IE IE502/83A patent/IE54573B1/en not_active IP Right Cessation
- 1983-03-09 BR BR8301160A patent/BR8301160A/pt unknown
- 1983-03-10 DE DE19833308598 patent/DE3308598A1/de not_active Ceased
- 1983-03-11 AU AU12415/83A patent/AU540909B2/en not_active Ceased
- 1983-03-11 FR FR838304009A patent/FR2523768B1/fr not_active Expired - Fee Related
- 1983-03-14 NL NL8300925A patent/NL8300925A/nl not_active Application Discontinuation
- 1983-03-14 SE SE8301366A patent/SE457300B/sv not_active IP Right Cessation
- 1983-03-18 JP JP58045837A patent/JPS58170075A/ja active Pending
- 1983-03-18 MX MX196625A patent/MX153416A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| MX153416A (es) | 1986-10-07 |
| IN161241B (pt) | 1987-10-31 |
| GB8306327D0 (en) | 1983-04-13 |
| SE8301366D0 (sv) | 1983-03-14 |
| AU1241583A (en) | 1984-09-20 |
| IL67926A0 (en) | 1983-06-15 |
| SE8301366L (sv) | 1983-09-19 |
| IT8319923A0 (it) | 1983-03-04 |
| FR2523768A1 (fr) | 1983-09-23 |
| NL8300925A (nl) | 1983-10-17 |
| ZA831342B (en) | 1983-11-30 |
| IE830502L (en) | 1983-09-18 |
| FR2523768B1 (fr) | 1991-03-29 |
| IE54573B1 (en) | 1989-11-22 |
| JPS58170075A (ja) | 1983-10-06 |
| BR8301160A (pt) | 1983-11-22 |
| DE3308598A1 (de) | 1983-09-22 |
| IL67926A (en) | 1986-04-29 |
| GB2116775A (en) | 1983-09-28 |
| AU540909B2 (en) | 1984-12-06 |
| IT1160506B (it) | 1987-03-11 |
| SE457300B (sv) | 1988-12-12 |
| GB2116775B (en) | 1986-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4379943A (en) | Current enhanced photovoltaic device | |
| US4419533A (en) | Photovoltaic device having incident radiation directing means for total internal reflection | |
| EP0122778B1 (en) | Narrow band gap photovoltaic devices with enhanced open circuit voltage | |
| CA1245330A (en) | Back reflector system and devices utilizing same | |
| US7064263B2 (en) | Stacked photovoltaic device | |
| EP0104907B1 (en) | Method of making amorphous semiconductor alloys and devices using microwave energy | |
| GB2124826A (en) | Amorphous semiconductor materials | |
| IE52205B1 (en) | Method for optimizing photoresponsive amorphous alloys and devices | |
| KR890004497B1 (ko) | 다중 셀의 감광성 비정질 합금 및 소자 | |
| KR910002764B1 (ko) | 비결정 반도체의 제법 및 장치 | |
| US5104455A (en) | Amorphous semiconductor solar cell | |
| JP2692091B2 (ja) | 炭化ケイ素半導体膜およびその製造方法 | |
| EP0058543B1 (en) | Photoresponsive amorphous semiconductor alloys | |
| JP2936033B2 (ja) | 太陽電池 | |
| JP2908617B2 (ja) | 太陽電池 | |
| GB2083703A (en) | Amorphous semiconductors | |
| JP2908616B2 (ja) | 太陽電池 | |
| JPH07240531A (ja) | 太陽電池およびその製造方法、並びに多層薄膜形成方法 | |
| CA1213375A (en) | Semiconductor device having a body of amorphous silicon | |
| JP2936032B2 (ja) | 太陽電池 | |
| JP2784821B2 (ja) | 光起電力素子 | |
| JP2784819B2 (ja) | 光起電力素子 | |
| AU8339082A (en) | Amorphous semiconductor method and devices | |
| JPH065896A (ja) | 太陽電池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |