DE3308598A1 - Rueckreflektorsystem fuer sperrschicht-fotoelemente - Google Patents
Rueckreflektorsystem fuer sperrschicht-fotoelementeInfo
- Publication number
- DE3308598A1 DE3308598A1 DE19833308598 DE3308598A DE3308598A1 DE 3308598 A1 DE3308598 A1 DE 3308598A1 DE 19833308598 DE19833308598 DE 19833308598 DE 3308598 A DE3308598 A DE 3308598A DE 3308598 A1 DE3308598 A1 DE 3308598A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- reflector system
- amorphous silicon
- oxide
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 82
- 239000000956 alloy Substances 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 78
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 22
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229940071182 stannate Drugs 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 7
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 150000004770 chalcogenides Chemical class 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 3
- YRNLXSUVDAMZLU-UHFFFAOYSA-N germanium;oxotin Chemical compound [Ge].[Sn]=O YRNLXSUVDAMZLU-UHFFFAOYSA-N 0.000 claims description 3
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 6
- 229960004643 cupric oxide Drugs 0.000 claims 3
- 229960001296 zinc oxide Drugs 0.000 claims 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 229910000765 intermetallic Inorganic materials 0.000 claims 2
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 claims 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 7
- 239000002178 crystalline material Substances 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001188 F alloy Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- VDRSDNINOSAWIV-UHFFFAOYSA-N [F].[Si] Chemical compound [F].[Si] VDRSDNINOSAWIV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 however Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35937182A | 1982-03-18 | 1982-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3308598A1 true DE3308598A1 (de) | 1983-09-22 |
Family
ID=23413524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833308598 Ceased DE3308598A1 (de) | 1982-03-18 | 1983-03-10 | Rueckreflektorsystem fuer sperrschicht-fotoelemente |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS58170075A (pt) |
| AU (1) | AU540909B2 (pt) |
| BR (1) | BR8301160A (pt) |
| CA (1) | CA1245330A (pt) |
| DE (1) | DE3308598A1 (pt) |
| FR (1) | FR2523768B1 (pt) |
| GB (1) | GB2116775B (pt) |
| IE (1) | IE54573B1 (pt) |
| IL (1) | IL67926A (pt) |
| IN (1) | IN161241B (pt) |
| IT (1) | IT1160506B (pt) |
| MX (1) | MX153416A (pt) |
| NL (1) | NL8300925A (pt) |
| SE (1) | SE457300B (pt) |
| ZA (1) | ZA831342B (pt) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3502218A1 (de) * | 1985-01-24 | 1986-07-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Fuer photovoltaische solargeneratoren verwendbare solarzelle |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58171870A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS58171869A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS6034076A (ja) * | 1983-08-05 | 1985-02-21 | Taiyo Yuden Co Ltd | 非晶質シリコン太陽電池 |
| EP0167231A1 (en) * | 1984-05-02 | 1986-01-08 | Energy Conversion Devices, Inc. | Photoresponsive device incorporating improved back reflector |
| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| JPH0656883B2 (ja) * | 1986-03-03 | 1994-07-27 | 鐘淵化学工業株式会社 | 半導体装置 |
| JPS62259480A (ja) * | 1986-05-01 | 1987-11-11 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPH01304786A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 光発電素子 |
| JPH0273672A (ja) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | 薄膜光電変換素子 |
| US5324365A (en) * | 1991-09-24 | 1994-06-28 | Canon Kabushiki Kaisha | Solar cell |
| JP2994812B2 (ja) * | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | 太陽電池 |
| JPH0677510A (ja) * | 1992-08-24 | 1994-03-18 | Canon Inc | 光起電力素子 |
| WO1996011500A1 (en) * | 1994-10-06 | 1996-04-18 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Thin film solar cell |
| US5626687A (en) * | 1995-03-29 | 1997-05-06 | The United States Of America As Represented By The United States Department Of Energy | Thermophotovoltaic in-situ mirror cell |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| US20120318352A1 (en) * | 2011-06-14 | 2012-12-20 | General Electric Company | Photovoltaic device with reflection enhancing layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55125680A (en) | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
| DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3973994A (en) * | 1974-03-11 | 1976-08-10 | Rca Corporation | Solar cell with grooved surface |
| US3988167A (en) * | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| EG13199A (en) * | 1977-03-28 | 1981-06-30 | Rca Corp | A photo volataic device having increased absorption efficiency |
-
1983
- 1983-02-16 IL IL67926A patent/IL67926A/xx unknown
- 1983-02-22 IN IN211/CAL/83A patent/IN161241B/en unknown
- 1983-02-28 ZA ZA831342A patent/ZA831342B/xx unknown
- 1983-03-04 IT IT19923/83A patent/IT1160506B/it active
- 1983-03-07 CA CA000423034A patent/CA1245330A/en not_active Expired
- 1983-03-08 IE IE502/83A patent/IE54573B1/en not_active IP Right Cessation
- 1983-03-08 GB GB08306327A patent/GB2116775B/en not_active Expired
- 1983-03-09 BR BR8301160A patent/BR8301160A/pt unknown
- 1983-03-10 DE DE19833308598 patent/DE3308598A1/de not_active Ceased
- 1983-03-11 AU AU12415/83A patent/AU540909B2/en not_active Ceased
- 1983-03-11 FR FR838304009A patent/FR2523768B1/fr not_active Expired - Fee Related
- 1983-03-14 SE SE8301366A patent/SE457300B/sv not_active IP Right Cessation
- 1983-03-14 NL NL8300925A patent/NL8300925A/nl not_active Application Discontinuation
- 1983-03-18 JP JP58045837A patent/JPS58170075A/ja active Pending
- 1983-03-18 MX MX196625A patent/MX153416A/es unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55125680A (en) | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
| DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
Non-Patent Citations (3)
| Title |
|---|
| JP 55-125 680 Abstract * |
| US-Z: IEEE Trans.Electron Devices, Bd. ED-27, No. 4, April 1980, S.662-670 * |
| US-Z: Solar Energy, Bd. 27, No. 4, 1981, S. 283-287 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3502218A1 (de) * | 1985-01-24 | 1986-07-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Fuer photovoltaische solargeneratoren verwendbare solarzelle |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1160506B (it) | 1987-03-11 |
| IL67926A (en) | 1986-04-29 |
| FR2523768A1 (fr) | 1983-09-23 |
| IT8319923A0 (it) | 1983-03-04 |
| AU1241583A (en) | 1984-09-20 |
| SE8301366D0 (sv) | 1983-03-14 |
| IE830502L (en) | 1983-09-18 |
| AU540909B2 (en) | 1984-12-06 |
| NL8300925A (nl) | 1983-10-17 |
| JPS58170075A (ja) | 1983-10-06 |
| GB2116775B (en) | 1986-07-30 |
| GB2116775A (en) | 1983-09-28 |
| SE457300B (sv) | 1988-12-12 |
| IN161241B (pt) | 1987-10-31 |
| IL67926A0 (en) | 1983-06-15 |
| GB8306327D0 (en) | 1983-04-13 |
| BR8301160A (pt) | 1983-11-22 |
| IE54573B1 (en) | 1989-11-22 |
| FR2523768B1 (fr) | 1991-03-29 |
| CA1245330A (en) | 1988-11-22 |
| SE8301366L (sv) | 1983-09-19 |
| ZA831342B (en) | 1983-11-30 |
| MX153416A (es) | 1986-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |