CA1228425A - Dynamic ram cell with mos trench capacitor in cmos - Google Patents
Dynamic ram cell with mos trench capacitor in cmosInfo
- Publication number
- CA1228425A CA1228425A CA000478628A CA478628A CA1228425A CA 1228425 A CA1228425 A CA 1228425A CA 000478628 A CA000478628 A CA 000478628A CA 478628 A CA478628 A CA 478628A CA 1228425 A CA1228425 A CA 1228425A
- Authority
- CA
- Canada
- Prior art keywords
- memory cell
- dynamic random
- random access
- access memory
- cell according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000003860 storage Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 52
- 150000004767 nitrides Chemical class 0.000 description 20
- 230000015654 memory Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000002866 fluorescence resonance energy transfer Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 208000037062 Polyps Diseases 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 235000013547 stew Nutrition 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62651284A | 1984-06-29 | 1984-06-29 | |
| US626,512 | 1984-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1228425A true CA1228425A (en) | 1987-10-20 |
Family
ID=24510683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000478628A Expired CA1228425A (en) | 1984-06-29 | 1985-04-09 | Dynamic ram cell with mos trench capacitor in cmos |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6115362A (enrdf_load_stackoverflow) |
| CA (1) | CA1228425A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801989A (en) * | 1986-02-20 | 1989-01-31 | Fujitsu Limited | Dynamic random access memory having trench capacitor with polysilicon lined lower electrode |
| EP0236089B1 (en) * | 1986-03-03 | 1992-08-05 | Fujitsu Limited | Dynamic random access memory having trench capacitor |
| JPH0691212B2 (ja) * | 1986-10-07 | 1994-11-14 | 日本電気株式会社 | 半導体メモリ |
| JP2560307B2 (ja) * | 1987-01-28 | 1996-12-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
| WO2012063393A1 (ja) | 2010-11-10 | 2012-05-18 | 本田技研工業株式会社 | 自動車のフロア構造 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57188863A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Field effect type semiconductor device |
| JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
| JPS59110155A (ja) * | 1982-12-16 | 1984-06-26 | Nec Corp | 半導体メモリセル |
-
1985
- 1985-02-20 JP JP60030653A patent/JPS6115362A/ja active Granted
- 1985-04-09 CA CA000478628A patent/CA1228425A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0444428B2 (enrdf_load_stackoverflow) | 1992-07-21 |
| JPS6115362A (ja) | 1986-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |