CA1205571A - Semiconductor device having cmos structures - Google Patents
Semiconductor device having cmos structuresInfo
- Publication number
- CA1205571A CA1205571A CA000445161A CA445161A CA1205571A CA 1205571 A CA1205571 A CA 1205571A CA 000445161 A CA000445161 A CA 000445161A CA 445161 A CA445161 A CA 445161A CA 1205571 A CA1205571 A CA 1205571A
- Authority
- CA
- Canada
- Prior art keywords
- type
- conductivity
- channel mos
- semiconductor device
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 4
- 230000010354 integration Effects 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 description 27
- 230000007423 decrease Effects 0.000 description 18
- 238000002955 isolation Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/387—Devices controllable only by the variation of applied heat
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2218/1983 | 1983-01-12 | ||
| JP58002218A JPS59127857A (ja) | 1983-01-12 | 1983-01-12 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1205571A true CA1205571A (en) | 1986-06-03 |
Family
ID=11523215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000445161A Expired CA1205571A (en) | 1983-01-12 | 1984-01-12 | Semiconductor device having cmos structures |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0114061A3 (en, 2012) |
| JP (1) | JPS59127857A (en, 2012) |
| CA (1) | CA1205571A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4789917A (en) * | 1987-08-31 | 1988-12-06 | National Semiconductor Corp. | MOS I/O protection using switched body circuit design |
| NL8802423A (nl) * | 1988-10-03 | 1990-05-01 | Imec Inter Uni Micro Electr | Werkwijze voor het bedrijven van een mos-structuur en daarvoor geschikte mos-structuur. |
| IT1293736B1 (it) * | 1997-07-18 | 1999-03-10 | Flame Spray Snc | Apparecchiatura per l'applicazione di rivestimenti protettivi con tecnica a plasma |
| CN104601164A (zh) * | 2015-02-04 | 2015-05-06 | 苏州大学 | 一种基于3只mos管设计的反相器和滤波电路 |
| JP6856640B2 (ja) * | 2016-06-20 | 2021-04-07 | 三菱電機株式会社 | 並列駆動回路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3493824A (en) * | 1967-08-31 | 1970-02-03 | Gen Telephone & Elect | Insulated-gate field effect transistors utilizing a high resistivity substrate |
| JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
| DE2947311C2 (de) * | 1978-11-24 | 1982-04-01 | Hitachi, Ltd., Tokyo | Integrierte Halbleiterschaltung |
-
1983
- 1983-01-12 JP JP58002218A patent/JPS59127857A/ja active Granted
-
1984
- 1984-01-11 EP EP84100232A patent/EP0114061A3/en not_active Withdrawn
- 1984-01-12 CA CA000445161A patent/CA1205571A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59127857A (ja) | 1984-07-23 |
| JPH0430188B2 (en, 2012) | 1992-05-21 |
| EP0114061A3 (en) | 1985-10-09 |
| EP0114061A2 (en) | 1984-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |