CA1152626A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
CA1152626A
CA1152626A CA000354239A CA354239A CA1152626A CA 1152626 A CA1152626 A CA 1152626A CA 000354239 A CA000354239 A CA 000354239A CA 354239 A CA354239 A CA 354239A CA 1152626 A CA1152626 A CA 1152626A
Authority
CA
Canada
Prior art keywords
assembly block
cap
semiconductor laser
base
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000354239A
Other languages
English (en)
French (fr)
Inventor
Antonius A.M. Van Alem
Johan C.J. Finck
Peter W.M. Van De Water
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uniphase Opto Holdings Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of CA1152626A publication Critical patent/CA1152626A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA000354239A 1979-06-26 1980-06-18 Semiconductor laser device Expired CA1152626A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7904954 1979-06-26
NLAANVRAGE7904954,A NL181963C (nl) 1979-06-26 1979-06-26 Halfgeleiderlaserinrichting.

Publications (1)

Publication Number Publication Date
CA1152626A true CA1152626A (en) 1983-08-23

Family

ID=19833419

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000354239A Expired CA1152626A (en) 1979-06-26 1980-06-18 Semiconductor laser device

Country Status (12)

Country Link
US (1) US4351051A (US07943777-20110517-C00090.png)
JP (1) JPS566494A (US07943777-20110517-C00090.png)
AU (1) AU523568B2 (US07943777-20110517-C00090.png)
BE (1) BE883986A (US07943777-20110517-C00090.png)
CA (1) CA1152626A (US07943777-20110517-C00090.png)
CH (1) CH648156A5 (US07943777-20110517-C00090.png)
DE (1) DE3023706A1 (US07943777-20110517-C00090.png)
ES (1) ES8103501A1 (US07943777-20110517-C00090.png)
FR (1) FR2465335B1 (US07943777-20110517-C00090.png)
GB (1) GB2052140B (US07943777-20110517-C00090.png)
IT (1) IT1131636B (US07943777-20110517-C00090.png)
NL (1) NL181963C (US07943777-20110517-C00090.png)

Families Citing this family (39)

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JPS57177579A (en) * 1981-04-24 1982-11-01 Nec Corp Photosemiconductor device
DE3128418A1 (de) * 1981-07-17 1983-02-03 Siemens AG, 1000 Berlin und 8000 München Gehaeuse fuer elektronische bauelemente, insbesondere optoelektronische halbleiterbauelemente
JPS5821889A (ja) * 1981-07-31 1983-02-08 Sony Corp 半導体組立構造
JPS5880887A (ja) * 1981-11-09 1983-05-16 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5884486A (ja) * 1981-11-13 1983-05-20 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS5858368U (ja) * 1981-10-15 1983-04-20 株式会社東芝 半導体レ−ザダイオ−ド装置
JPS5898995A (ja) * 1981-12-09 1983-06-13 Nec Corp 光半導体装置
JPS58145169A (ja) * 1982-02-23 1983-08-29 Nec Corp 光半導体装置
US4536062A (en) * 1982-07-21 1985-08-20 Litton Systems, Inc. Thermal stabilization for an acousto-optic device
US4615031A (en) * 1982-07-27 1986-09-30 International Standard Electric Corporation Injection laser packages
JPS5923583A (ja) * 1982-07-30 1984-02-07 Canon Inc レ−ザユニツト
FR2531819A1 (fr) * 1982-08-12 1984-02-17 Demeure Loic Embase pour laser a semi-conducteur et son procede de fabrication
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
US4832251A (en) * 1983-12-13 1989-05-23 General Electric Company Method of mounting semiconductor lasers providing improved lasing spot alignment
EP0172485B1 (de) * 1984-08-08 1989-01-11 Siemens Aktiengesellschaft Gemeinsames Gehäuse für zwei Halbleiterkörper
EP0216174A1 (de) * 1985-09-25 1987-04-01 Siemens Aktiengesellschaft Lichtweichen-Einheit
US4818099A (en) * 1985-10-25 1989-04-04 Preikschat F K Optical radar system
US4761788A (en) * 1985-10-28 1988-08-02 American Telephone And Telegraph Company Stripline mount for semiconductor lasers
US4768070A (en) * 1986-03-20 1988-08-30 Hitachi, Ltd Optoelectronics device
US4757197A (en) * 1986-05-01 1988-07-12 Lee Wai Hon Semiconductor laser and detector device
JPS6340387A (ja) * 1986-08-05 1988-02-20 Sharp Corp 半導体レ−ザ装置
US4905216A (en) * 1986-12-04 1990-02-27 Pencom International Corporation Method for constructing an optical head by varying a hologram pattern
JP2682641B2 (ja) * 1988-06-03 1997-11-26 株式会社リコー 半導体レーザー光源装置
GB2224352B (en) * 1988-10-05 1992-09-16 Hamamatsu Photonics Kk Light waveform measuring apparatus
US4953006A (en) * 1989-07-27 1990-08-28 Northern Telecom Limited Packaging method and package for edge-coupled optoelectronic device
US5075765A (en) * 1990-09-21 1991-12-24 Unisys Low stress multichip module
DE9211110U1 (de) * 1992-08-19 1992-10-29 Bodenseewerk Gerätetechnik GmbH, 7770 Überlingen Anordnung zum Einbau von Halbleiter-Laserdioden in optomechanische Systeme
US5302778A (en) * 1992-08-28 1994-04-12 Eastman Kodak Company Semiconductor insulation for optical devices
JP2661521B2 (ja) * 1993-09-25 1997-10-08 日本電気株式会社 半導体受光装置
JP3682221B2 (ja) * 2000-11-28 2005-08-10 シャープ株式会社 半導体レーザ装置
EP1483816A4 (en) * 2002-02-14 2006-08-30 Finisar Corp HEADER ASSEMBLY WITH INTEGRATED COOLING DEVICE
KR20050007459A (ko) * 2002-04-16 2005-01-18 엑스룸 포토닉스 리미티드 통합 커넥터를 구비한 전자 광학 회로 및 그 제조 방법
US20040021214A1 (en) * 2002-04-16 2004-02-05 Avner Badehi Electro-optic integrated circuits with connectors and methods for the production thereof
US7061949B1 (en) 2002-08-16 2006-06-13 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
WO2005036226A1 (en) * 2003-10-15 2005-04-21 Xloom Photonics Ltd. Electro-optical circuitry having integrated connector and methods for the production thereof
WO2005048421A1 (ja) * 2003-11-14 2005-05-26 Sanyo Electric Co., Ltd 半導体レーザ装置
US20050196173A1 (en) * 2003-12-29 2005-09-08 Finisar Corporation Receive optical assembly with angled optical receiver
US20090093137A1 (en) * 2007-10-08 2009-04-09 Xloom Communications, (Israel) Ltd. Optical communications module
JP7240160B2 (ja) * 2018-12-11 2023-03-15 新光電気工業株式会社 ステム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1403801A (en) * 1973-01-30 1975-08-28 Standard Telephones Cables Ltd Semiconductor device stud mount
US3857993A (en) * 1973-11-21 1974-12-31 Raytheon Co Beam lead semiconductor package
GB1463233A (en) * 1975-02-13 1977-02-02 Standard Telephones Cables Ltd Injection laser assembly
DE2741700A1 (de) * 1977-09-16 1979-03-22 Siemens Ag Einrichtung zum ueberwachen der emission eines halbleiterstrahlers
JPS54101296A (en) * 1978-01-26 1979-08-09 Nec Corp Photo semiconductor device
JPS54142988A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Photo semiconductor device
US4240090A (en) * 1978-06-14 1980-12-16 Rca Corporation Electroluminescent semiconductor device with fiber-optic face plate

Also Published As

Publication number Publication date
DE3023706C2 (US07943777-20110517-C00090.png) 1987-02-26
AU523568B2 (en) 1982-08-05
BE883986A (fr) 1980-12-24
CH648156A5 (de) 1985-02-28
IT1131636B (it) 1986-06-25
NL181963B (nl) 1987-07-01
ES492751A0 (es) 1981-02-16
NL181963C (nl) 1987-12-01
ES8103501A1 (es) 1981-02-16
US4351051A (en) 1982-09-21
IT8022937A0 (it) 1980-06-23
JPS566494A (en) 1981-01-23
AU5951180A (en) 1981-01-08
GB2052140B (en) 1983-04-27
FR2465335A1 (fr) 1981-03-20
DE3023706A1 (de) 1981-01-15
JPS571914B2 (US07943777-20110517-C00090.png) 1982-01-13
NL7904954A (nl) 1980-12-30
FR2465335B1 (fr) 1985-10-31
GB2052140A (en) 1981-01-21

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Legal Events

Date Code Title Description
MKEX Expiry
MKEX Expiry

Effective date: 20000823