CA1148669A - Gradient doping in amorphous silicon - Google Patents

Gradient doping in amorphous silicon

Info

Publication number
CA1148669A
CA1148669A CA000360413A CA360413A CA1148669A CA 1148669 A CA1148669 A CA 1148669A CA 000360413 A CA000360413 A CA 000360413A CA 360413 A CA360413 A CA 360413A CA 1148669 A CA1148669 A CA 1148669A
Authority
CA
Canada
Prior art keywords
layer
amorphous silicon
bias voltage
dopant
volts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000360413A
Other languages
English (en)
French (fr)
Inventor
Theodore D. Moustakas
Christopher R. Wronski
Robert A. Friedman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Application granted granted Critical
Publication of CA1148669A publication Critical patent/CA1148669A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10P14/22—
    • H10P14/3202—
    • H10P14/3241—
    • H10P14/3411—
    • H10P14/3441—
    • H10P14/3454—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CA000360413A 1979-12-28 1980-09-17 Gradient doping in amorphous silicon Expired CA1148669A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US108,024 1979-12-28
US06/108,024 US4251289A (en) 1979-12-28 1979-12-28 Gradient doping in amorphous silicon

Publications (1)

Publication Number Publication Date
CA1148669A true CA1148669A (en) 1983-06-21

Family

ID=22319829

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000360413A Expired CA1148669A (en) 1979-12-28 1980-09-17 Gradient doping in amorphous silicon

Country Status (8)

Country Link
US (1) US4251289A (Direct)
JP (1) JPS56101741A (Direct)
AU (1) AU538266B2 (Direct)
CA (1) CA1148669A (Direct)
DE (1) DE3048857A1 (Direct)
FR (1) FR2472835A1 (Direct)
GB (1) GB2066858B (Direct)
IT (1) IT1141597B (Direct)

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US4533450A (en) * 1979-12-31 1985-08-06 Exxon Research And Engineering Co. Control of the hydrogen bonding in reactively sputtered amorphous silicon
US5258250A (en) * 1981-01-16 1993-11-02 Canon Kabushiki Kaisha Photoconductive member
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
US4464451A (en) * 1981-02-06 1984-08-07 Canon Kabushiki Kaisha Electrophotographic image-forming member having aluminum oxide layer on a substrate
US4417092A (en) * 1981-03-16 1983-11-22 Exxon Research And Engineering Co. Sputtered pin amorphous silicon semi-conductor device and method therefor
US4490208A (en) * 1981-07-08 1984-12-25 Agency Of Industrial Science And Technology Method of producing thin films of silicon
JPS5868971A (ja) * 1981-10-19 1983-04-25 Konishiroku Photo Ind Co Ltd 太陽電池の製造方法
US4536460A (en) * 1981-11-09 1985-08-20 Canon Kabushiki Kaisha Photoconductive member
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
US4483911A (en) * 1981-12-28 1984-11-20 Canon Kabushiki Kaisha Photoconductive member with amorphous silicon-carbon surface layer
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
GB2117971A (en) * 1982-04-05 1983-10-19 Hitachi Ltd Amorphous silicon photovoltaic device
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
JPS5955012A (ja) * 1982-09-24 1984-03-29 Mitsubishi Chem Ind Ltd アモルフアスシリコン半導体材料用基板
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
DE3427637A1 (de) * 1983-07-26 1985-02-14 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Photorezeptor und verfahren zu seiner herstellung
DE3417732A1 (de) * 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
JPS613471A (ja) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd 半導体装置
US4681061A (en) * 1985-04-05 1987-07-21 Square D Company Button indicator and switch assembly
JPH0228372A (ja) * 1988-04-20 1990-01-30 Konica Corp イメージセンサ
TWI298472B (en) * 2003-12-15 2008-07-01 Hannstar Display Corp Pixel driving circuit and method thereof
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
EP2351873B1 (en) * 2008-10-30 2018-03-21 Panasonic Intellectual Property Management Co., Ltd. Photoelectrochemical cell and energy system using the same
WO2011016244A1 (ja) 2009-08-05 2011-02-10 パナソニック株式会社 光電気化学セル及びそれを用いたエネルギーシステム
US8829342B2 (en) 2009-10-19 2014-09-09 The University Of Toledo Back contact buffer layer for thin-film solar cells
TWI497730B (zh) * 2009-10-20 2015-08-21 Iner Aec Executive Yuan 一種薄膜光伏裝置及其製造方法
JP4791614B2 (ja) * 2009-11-10 2011-10-12 パナソニック株式会社 光電気化学セル及びそれを用いたエネルギーシステム
WO2011150290A2 (en) 2010-05-26 2011-12-01 The University Of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
US9112103B1 (en) 2013-03-11 2015-08-18 Rayvio Corporation Backside transparent substrate roughening for UV light emitting diode
JPWO2014064769A1 (ja) * 2012-10-23 2016-09-05 パナソニックＩｐマネジメント株式会社 太陽電池
CN105132875B (zh) * 2015-08-31 2017-07-28 辽宁工业大学 一种扩散法制备高浓度梯度azo单晶导电薄膜的方法
EP4379427A1 (en) * 2022-12-01 2024-06-05 Consejo Superior De Investigaciones Científicas Silicon carbide dosimeter for high dose pulsed radiation

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US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
GB1062998A (en) * 1964-12-16 1967-03-22 Ca Atomic Energy Ltd Large volume lithium-drifted diodes
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4178415A (en) * 1978-03-22 1979-12-11 Energy Conversion Devices, Inc. Modified amorphous semiconductors and method of making the same
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Also Published As

Publication number Publication date
FR2472835B1 (Direct) 1985-04-05
AU6580980A (en) 1981-07-02
US4251289A (en) 1981-02-17
GB2066858A (en) 1981-07-15
DE3048857A1 (de) 1981-09-17
FR2472835A1 (fr) 1981-07-03
JPS56101741A (en) 1981-08-14
IT1141597B (it) 1986-10-01
GB2066858B (en) 1983-08-24
IT8026956A0 (it) 1980-12-24
AU538266B2 (en) 1984-08-09

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