IT8026956A0 - Metodo per ottenere un profilo di drogaggio a gradiente in silicio amorfo. - Google Patents
Metodo per ottenere un profilo di drogaggio a gradiente in silicio amorfo.Info
- Publication number
- IT8026956A0 IT8026956A0 IT8026956A IT2695680A IT8026956A0 IT 8026956 A0 IT8026956 A0 IT 8026956A0 IT 8026956 A IT8026956 A IT 8026956A IT 2695680 A IT2695680 A IT 2695680A IT 8026956 A0 IT8026956 A0 IT 8026956A0
- Authority
- IT
- Italy
- Prior art keywords
- dopping
- profile
- amorphous silicon
- silicon gradient
- gradient
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/108,024 US4251289A (en) | 1979-12-28 | 1979-12-28 | Gradient doping in amorphous silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8026956A0 true IT8026956A0 (it) | 1980-12-24 |
IT1141597B IT1141597B (it) | 1986-10-01 |
Family
ID=22319829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26956/80A IT1141597B (it) | 1979-12-28 | 1980-12-24 | Metodo per ottenere un profilo di drogaggio a gradiente in silicio amorfo |
Country Status (8)
Country | Link |
---|---|
US (1) | US4251289A (it) |
JP (1) | JPS56101741A (it) |
AU (1) | AU538266B2 (it) |
CA (1) | CA1148669A (it) |
DE (1) | DE3048857A1 (it) |
FR (1) | FR2472835A1 (it) |
GB (1) | GB2066858B (it) |
IT (1) | IT1141597B (it) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4533450A (en) * | 1979-12-31 | 1985-08-06 | Exxon Research And Engineering Co. | Control of the hydrogen bonding in reactively sputtered amorphous silicon |
US4539283A (en) * | 1981-01-16 | 1985-09-03 | Canon Kabushiki Kaisha | Amorphous silicon photoconductive member |
US4490453A (en) * | 1981-01-16 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member of a-silicon with nitrogen |
US5258250A (en) * | 1981-01-16 | 1993-11-02 | Canon Kabushiki Kaisha | Photoconductive member |
US5582947A (en) * | 1981-01-16 | 1996-12-10 | Canon Kabushiki Kaisha | Glow discharge process for making photoconductive member |
US4464451A (en) * | 1981-02-06 | 1984-08-07 | Canon Kabushiki Kaisha | Electrophotographic image-forming member having aluminum oxide layer on a substrate |
US4417092A (en) * | 1981-03-16 | 1983-11-22 | Exxon Research And Engineering Co. | Sputtered pin amorphous silicon semi-conductor device and method therefor |
US4490208A (en) * | 1981-07-08 | 1984-12-25 | Agency Of Industrial Science And Technology | Method of producing thin films of silicon |
JPS5868971A (ja) * | 1981-10-19 | 1983-04-25 | Konishiroku Photo Ind Co Ltd | 太陽電池の製造方法 |
US4536460A (en) * | 1981-11-09 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member |
US4423133A (en) * | 1981-11-17 | 1983-12-27 | Canon Kabushiki Kaisha | Photoconductive member of amorphous silicon |
US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
US4483911A (en) * | 1981-12-28 | 1984-11-20 | Canon Kabushiki Kaisha | Photoconductive member with amorphous silicon-carbon surface layer |
DE3303266A1 (de) * | 1982-02-01 | 1983-08-11 | Canon K.K., Tokyo | Fotoeleitfaehiges element |
US4522905A (en) * | 1982-02-04 | 1985-06-11 | Canon Kk | Amorphous silicon photoconductive member with interface and rectifying layers |
US4452874A (en) * | 1982-02-08 | 1984-06-05 | Canon Kabushiki Kaisha | Photoconductive member with multiple amorphous Si layers |
US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
GB2117971A (en) * | 1982-04-05 | 1983-10-19 | Hitachi Ltd | Amorphous silicon photovoltaic device |
EP0103168A3 (en) * | 1982-09-10 | 1986-07-02 | Hitachi, Ltd. | Amorphous silicon solar battery |
JPS5955012A (ja) * | 1982-09-24 | 1984-03-29 | Mitsubishi Chem Ind Ltd | アモルフアスシリコン半導体材料用基板 |
US4471036A (en) * | 1983-06-29 | 1984-09-11 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical photovoltaic cells and electrodes |
DE3427637A1 (de) * | 1983-07-26 | 1985-02-14 | Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo | Photorezeptor und verfahren zu seiner herstellung |
DE3417732A1 (de) * | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens |
JPS613471A (ja) * | 1984-06-15 | 1986-01-09 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
US4681061A (en) * | 1985-04-05 | 1987-07-21 | Square D Company | Button indicator and switch assembly |
JPH0228372A (ja) * | 1988-04-20 | 1990-01-30 | Konica Corp | イメージセンサ |
TWI298472B (en) * | 2003-12-15 | 2008-07-01 | Hannstar Display Corp | Pixel driving circuit and method thereof |
US7601246B2 (en) * | 2004-09-29 | 2009-10-13 | Lam Research Corporation | Methods of sputtering a protective coating on a semiconductor substrate |
EP2351873B1 (en) * | 2008-10-30 | 2018-03-21 | Panasonic Intellectual Property Management Co., Ltd. | Photoelectrochemical cell and energy system using the same |
JP5274663B2 (ja) | 2009-08-05 | 2013-08-28 | パナソニック株式会社 | 光電気化学セル及びそれを用いたエネルギーシステム |
WO2011049933A1 (en) * | 2009-10-19 | 2011-04-28 | The University Of Toledo | Back contact buffer layer for thin-film solar cells |
TWI497730B (zh) * | 2009-10-20 | 2015-08-21 | Iner Aec Executive Yuan | 一種薄膜光伏裝置及其製造方法 |
WO2011058723A1 (ja) * | 2009-11-10 | 2011-05-19 | パナソニック株式会社 | 光電気化学セル及びそれを用いたエネルギーシステム |
US9159851B2 (en) | 2010-05-26 | 2015-10-13 | The University Of Toledo | Photovoltaic structures having a light scattering interface layer and methods of making the same |
US9112103B1 (en) | 2013-03-11 | 2015-08-18 | Rayvio Corporation | Backside transparent substrate roughening for UV light emitting diode |
WO2014064769A1 (ja) * | 2012-10-23 | 2014-05-01 | 三洋電機株式会社 | 太陽電池 |
CN105132875B (zh) * | 2015-08-31 | 2017-07-28 | 辽宁工业大学 | 一种扩散法制备高浓度梯度azo单晶导电薄膜的方法 |
EP4379427A1 (en) * | 2022-12-01 | 2024-06-05 | Consejo Superior De Investigaciones Científicas | Silicon carbide dosimeter for high dose pulsed radiation |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3271637A (en) * | 1963-07-22 | 1966-09-06 | Nasa | Gaas solar detector using manganese as a doping agent |
GB1062998A (en) * | 1964-12-16 | 1967-03-22 | Ca Atomic Energy Ltd | Large volume lithium-drifted diodes |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4177473A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | Amorphous semiconductor member and method of making the same |
US4177474A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
US4178415A (en) * | 1978-03-22 | 1979-12-11 | Energy Conversion Devices, Inc. | Modified amorphous semiconductors and method of making the same |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
-
1979
- 1979-12-28 US US06/108,024 patent/US4251289A/en not_active Expired - Lifetime
-
1980
- 1980-09-17 CA CA000360413A patent/CA1148669A/en not_active Expired
- 1980-12-23 AU AU65809/80A patent/AU538266B2/en not_active Ceased
- 1980-12-23 DE DE19803048857 patent/DE3048857A1/de not_active Withdrawn
- 1980-12-24 IT IT26956/80A patent/IT1141597B/it active
- 1980-12-26 FR FR8027634A patent/FR2472835A1/fr active Granted
- 1980-12-27 JP JP18516180A patent/JPS56101741A/ja active Pending
- 1980-12-29 GB GB8041380A patent/GB2066858B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2066858B (en) | 1983-08-24 |
CA1148669A (en) | 1983-06-21 |
IT1141597B (it) | 1986-10-01 |
FR2472835B1 (it) | 1985-04-05 |
GB2066858A (en) | 1981-07-15 |
DE3048857A1 (de) | 1981-09-17 |
AU6580980A (en) | 1981-07-02 |
JPS56101741A (en) | 1981-08-14 |
US4251289A (en) | 1981-02-17 |
FR2472835A1 (fr) | 1981-07-03 |
AU538266B2 (en) | 1984-08-09 |
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