GB1062998A - Large volume lithium-drifted diodes - Google Patents

Large volume lithium-drifted diodes

Info

Publication number
GB1062998A
GB1062998A GB4062265A GB4062265A GB1062998A GB 1062998 A GB1062998 A GB 1062998A GB 4062265 A GB4062265 A GB 4062265A GB 4062265 A GB4062265 A GB 4062265A GB 1062998 A GB1062998 A GB 1062998A
Authority
GB
United Kingdom
Prior art keywords
lithium
diffused
crystal
drifted
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4062265A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atomic Energy of Canada Ltd AECL
Original Assignee
Atomic Energy of Canada Ltd AECL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atomic Energy of Canada Ltd AECL filed Critical Atomic Energy of Canada Ltd AECL
Publication of GB1062998A publication Critical patent/GB1062998A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,062,998. Semi-conductor devices. ATOMIC ENERGY OF CANADA Ltd. Sept. 23, 1965 [Dec. 16, 1964], No. 40622/65. Heading H1K. Lithium is diffused into at least two surfaces of a crystal of P-type semi-conductor material, a bias potential is applied between these surfaces and an electrical contact placed centrally on an end surface not diffused with lithium, and the crystal is heated so that lithium ions drift inwards from the diffused surfaces until the P-type region is reduced to a small central core. This core may be removed by drilling, machining, or etching and a P + contact applied to the surrounding intrinsic region. The resulting PIN diode is particularly intended for use as a radiation detector.
GB4062265A 1964-12-16 1965-09-23 Large volume lithium-drifted diodes Expired GB1062998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA918916 1964-12-16

Publications (1)

Publication Number Publication Date
GB1062998A true GB1062998A (en) 1967-03-22

Family

ID=4142144

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4062265A Expired GB1062998A (en) 1964-12-16 1965-09-23 Large volume lithium-drifted diodes

Country Status (4)

Country Link
DE (1) DE1288207B (en)
FR (1) FR1450317A (en)
GB (1) GB1062998A (en)
NL (1) NL6514924A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same

Also Published As

Publication number Publication date
FR1450317A (en) 1966-05-06
DE1288207B (en) 1969-01-30
NL6514924A (en) 1966-06-17

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