CA1088382A - Method of making a large scale integrated device having a planar surface - Google Patents

Method of making a large scale integrated device having a planar surface

Info

Publication number
CA1088382A
CA1088382A CA271,002A CA271002A CA1088382A CA 1088382 A CA1088382 A CA 1088382A CA 271002 A CA271002 A CA 271002A CA 1088382 A CA1088382 A CA 1088382A
Authority
CA
Canada
Prior art keywords
layer
metal
masking
insulating layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA271,002A
Other languages
English (en)
French (fr)
Inventor
Ekkehard F. Miersch
Hwa N. Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1088382A publication Critical patent/CA1088382A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CA271,002A 1976-02-06 1977-02-03 Method of making a large scale integrated device having a planar surface Expired CA1088382A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65581476A 1976-02-06 1976-02-06
US655,814 1976-02-06

Publications (1)

Publication Number Publication Date
CA1088382A true CA1088382A (en) 1980-10-28

Family

ID=24630480

Family Applications (1)

Application Number Title Priority Date Filing Date
CA271,002A Expired CA1088382A (en) 1976-02-06 1977-02-03 Method of making a large scale integrated device having a planar surface

Country Status (6)

Country Link
JP (1) JPS5827664B2 (de)
CA (1) CA1088382A (de)
DE (1) DE2703473A1 (de)
FR (1) FR2340620A1 (de)
GB (1) GB1521431A (de)
IT (1) IT1079545B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184909A (en) * 1978-08-21 1980-01-22 International Business Machines Corporation Method of forming thin film interconnection systems
JPS59170692A (ja) * 1983-03-16 1984-09-26 Ebara Corp 水封入熱交換器
CN108139240B (zh) 2015-10-27 2021-02-26 舍弗勒技术股份两合公司 具有用于提供多种工作电压的内置电气线路的轴承装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1267738B (de) * 1962-10-29 1968-05-09 Intellux Inc Verfahren zur Herstellung von elektrischen Verbindungen zwischen den Stromkreisen von mehrlagigen gedruckten elektrischen Schaltungen
US3464855A (en) * 1966-09-06 1969-09-02 North American Rockwell Process for forming interconnections in a multilayer circuit board
DE1765013A1 (de) * 1968-03-21 1971-07-01 Telefunken Patent Verfahren zur Herstellung von Mehrebenenschaltungen
DE2059425A1 (de) * 1970-12-02 1972-06-22 Siemens Ag Partieller Aufbau von gedruckten Mehrlagenschaltungen
JPS4960870A (de) * 1972-10-16 1974-06-13
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
JPS5120681A (en) * 1974-07-27 1976-02-19 Oki Electric Ind Co Ltd Handotaisochino seizohoho
NL7415841A (nl) * 1974-12-05 1976-06-09 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting, vervaardigd volgens de werkwijze.
JPS5272571A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Production of semiconductor device

Also Published As

Publication number Publication date
JPS5295987A (en) 1977-08-12
DE2703473A1 (de) 1977-08-11
IT1079545B (it) 1985-05-13
FR2340620B1 (de) 1979-09-28
FR2340620A1 (fr) 1977-09-02
DE2703473C2 (de) 1991-01-24
GB1521431A (en) 1978-08-16
JPS5827664B2 (ja) 1983-06-10

Similar Documents

Publication Publication Date Title
US4184909A (en) Method of forming thin film interconnection systems
US4560436A (en) Process for etching tapered polyimide vias
EP0100735B1 (de) "Lift-off"-Verfahren zum Herstellen von selbstausrichtenden Kontakten
US5686354A (en) Dual damascene with a protective mask for via etching
US4541169A (en) Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4070501A (en) Forming self-aligned via holes in thin film interconnection systems
EP0082515A2 (de) Verfahren zum Herstellen koplanarer Leiter-/Isolierschichten
US4872050A (en) Interconnection structure in semiconductor device and manufacturing method of the same
US4536249A (en) Integrated circuit processing methods
EP0558260A1 (de) Herstellungsverfahren von Kontaktöffnungen in integrierten Schaltungen
EP0076215B1 (de) Schattenmaske für Abhebetechnik
US4855252A (en) Process for making self-aligned contacts
US4520554A (en) Method of making a multi-level metallization structure for semiconductor device
EP0188735B1 (de) Einstellen der Neigung der Seitenflächen eines Kontaktlochs in einer isolierenden Schicht
CA1120611A (en) Forming interconnections for multilevel interconnection metallurgy systems
US3856648A (en) Method of forming contact and interconnect geometries for semiconductor devices and integrated circuits
CA1088382A (en) Method of making a large scale integrated device having a planar surface
US4317700A (en) Method of fabrication of planar bubble domain device structures
GB2059679A (en) Method of making composite bodies
JPH0750694B2 (ja) 導電層形成方法
US20020127850A1 (en) Integrated circuit with stop layer and method of manufacturing the same
JP2830636B2 (ja) 半導体装置の製造方法
US4693783A (en) Method of producing interconnections in a semiconductor integrated circuit structure
JPH0570301B2 (de)
EP0446939A2 (de) Verfahren zum Herstellen einer Halbleitervorrichtung

Legal Events

Date Code Title Description
MKEX Expiry