CA1065494A - Reverse switching rectifier and method for making same - Google Patents

Reverse switching rectifier and method for making same

Info

Publication number
CA1065494A
CA1065494A CA265,764A CA265764A CA1065494A CA 1065494 A CA1065494 A CA 1065494A CA 265764 A CA265764 A CA 265764A CA 1065494 A CA1065494 A CA 1065494A
Authority
CA
Canada
Prior art keywords
type
zone
wafer
emitter zone
cathode electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA265,764A
Other languages
English (en)
French (fr)
Inventor
Chang K. Chu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1065494A publication Critical patent/CA1065494A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/80PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)
CA265,764A 1975-11-17 1976-11-16 Reverse switching rectifier and method for making same Expired CA1065494A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/632,433 US4080620A (en) 1975-11-17 1975-11-17 Reverse switching rectifier and method for making same

Publications (1)

Publication Number Publication Date
CA1065494A true CA1065494A (en) 1979-10-30

Family

ID=24535507

Family Applications (1)

Application Number Title Priority Date Filing Date
CA265,764A Expired CA1065494A (en) 1975-11-17 1976-11-16 Reverse switching rectifier and method for making same

Country Status (7)

Country Link
US (1) US4080620A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5263078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE848225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1065494A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2331886A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1562509A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN144812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-01-22 1978-07-15 Westinghouse Electric Corp
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device
DE2815606A1 (de) * 1978-04-11 1979-10-31 Fiz Tekhn I Im A F Joffe Akade Thyristor
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
US4638553A (en) * 1982-12-08 1987-01-27 International Rectifier Corporation Method of manufacture of semiconductor device
JPH08242009A (ja) * 1994-12-02 1996-09-17 Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg パワー半導体デバイス
US7868352B2 (en) * 2008-09-23 2011-01-11 Optiswitch Technology Corporation Silicon break over diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1975-01-09

Also Published As

Publication number Publication date
BE848225A (fr) 1977-05-10
JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-10-24
JPS5263078A (en) 1977-05-25
GB1562509A (en) 1980-03-12
FR2331886A1 (fr) 1977-06-10
IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-03
US4080620A (en) 1978-03-21

Similar Documents

Publication Publication Date Title
US3919060A (en) Method of fabricating semiconductor device embodying dielectric isolation
EP0205217A2 (en) Semiconductor devices
US4638551A (en) Schottky barrier device and method of manufacture
CA1065494A (en) Reverse switching rectifier and method for making same
US6043516A (en) Semiconductor component with scattering centers within a lateral resistor region
KR100582106B1 (ko) 반도체 디바이스 제조 방법
CN116093152A (zh) 半导体器件
CA1078074A (en) High speed high power two terminal solid state switch fired by dv/dt
KR100322288B1 (ko) 고체억제기
US4497109A (en) Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation
US6707131B2 (en) Semiconductor device and manufacturing method for the same
US4825266A (en) Semiconductor diode
US4142201A (en) Light-controlled thyristor with anode-base surface firing
US5204273A (en) Method for the manufacturing of a thyristor with defined lateral resistor
JP3718223B2 (ja) 縦の溝を有する高電圧用の半導体デバイス
US5089427A (en) Semiconductor device and method
JPS5912026B2 (ja) サイリスタ
JP4154074B2 (ja) サージアブソーバ
GB2135514A (en) Self protected thyristor
US3877059A (en) Single diffused monolithic darlington circuit and method of manufacture thereof
US4035825A (en) Thyristor with branched base
US3894891A (en) Method for making a space charge limited transistor having recessed dielectric isolation
US6963088B2 (en) Semiconductor component
JPS63262870A (ja) ゲート遮断サイリスタ及びその製造方法
CA1050171A (en) Semiconductor heat sensitive switching device