IN147060B - - Google Patents

Info

Publication number
IN147060B
IN147060B IN1993/CAL/76A IN1993CA1976A IN147060B IN 147060 B IN147060 B IN 147060B IN 1993CA1976 A IN1993CA1976 A IN 1993CA1976A IN 147060 B IN147060 B IN 147060B
Authority
IN
India
Application number
IN1993/CAL/76A
Other languages
English (en)
Inventor
Chang Kwei Chu
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN147060B publication Critical patent/IN147060B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/80PNPN diodes, e.g. Shockley diodes or break-over diodes
IN1993/CAL/76A 1975-11-17 1976-11-03 IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/632,433 US4080620A (en) 1975-11-17 1975-11-17 Reverse switching rectifier and method for making same

Publications (1)

Publication Number Publication Date
IN147060B true IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-03

Family

ID=24535507

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1993/CAL/76A IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-11-17 1976-11-03

Country Status (7)

Country Link
US (1) US4080620A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5263078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE848225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1065494A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2331886A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1562509A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN144812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-01-22 1978-07-15 Westinghouse Electric Corp
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device
DE2815606A1 (de) * 1978-04-11 1979-10-31 Fiz Tekhn I Im A F Joffe Akade Thyristor
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
US4638553A (en) * 1982-12-08 1987-01-27 International Rectifier Corporation Method of manufacture of semiconductor device
JPH08242009A (ja) * 1994-12-02 1996-09-17 Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg パワー半導体デバイス
US7868352B2 (en) * 2008-09-23 2011-01-11 Optiswitch Technology Corporation Silicon break over diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1975-01-09

Also Published As

Publication number Publication date
BE848225A (fr) 1977-05-10
JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-10-24
JPS5263078A (en) 1977-05-25
GB1562509A (en) 1980-03-12
FR2331886A1 (fr) 1977-06-10
US4080620A (en) 1978-03-21
CA1065494A (en) 1979-10-30

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