JPS5263078A - Semiconductor switching element - Google Patents

Semiconductor switching element

Info

Publication number
JPS5263078A
JPS5263078A JP51137427A JP13742776A JPS5263078A JP S5263078 A JPS5263078 A JP S5263078A JP 51137427 A JP51137427 A JP 51137427A JP 13742776 A JP13742776 A JP 13742776A JP S5263078 A JPS5263078 A JP S5263078A
Authority
JP
Japan
Prior art keywords
switching element
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51137427A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kuei Chiyu Chiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5263078A publication Critical patent/JPS5263078A/ja
Publication of JPS5541536B2 publication Critical patent/JPS5541536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)
JP51137427A 1975-11-17 1976-11-17 Semiconductor switching element Granted JPS5263078A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/632,433 US4080620A (en) 1975-11-17 1975-11-17 Reverse switching rectifier and method for making same

Publications (2)

Publication Number Publication Date
JPS5263078A true JPS5263078A (en) 1977-05-25
JPS5541536B2 JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-10-24

Family

ID=24535507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51137427A Granted JPS5263078A (en) 1975-11-17 1976-11-17 Semiconductor switching element

Country Status (7)

Country Link
US (1) US4080620A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5263078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE848225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1065494A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2331886A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1562509A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN144812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-01-22 1978-07-15 Westinghouse Electric Corp
DE2815606A1 (de) * 1978-04-11 1979-10-31 Fiz Tekhn I Im A F Joffe Akade Thyristor
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
US4638553A (en) * 1982-12-08 1987-01-27 International Rectifier Corporation Method of manufacture of semiconductor device
JPH08242009A (ja) * 1994-12-02 1996-09-17 Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg パワー半導体デバイス
US7868352B2 (en) * 2008-09-23 2011-01-11 Optiswitch Technology Corporation Silicon break over diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1975-01-09

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1975-01-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device

Also Published As

Publication number Publication date
BE848225A (fr) 1977-05-10
JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-10-24
GB1562509A (en) 1980-03-12
FR2331886A1 (fr) 1977-06-10
IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-03
US4080620A (en) 1978-03-21
CA1065494A (en) 1979-10-30

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