FR2331886A1 - Redresseur a commutation inverse et procede pour le fabriquer - Google Patents

Redresseur a commutation inverse et procede pour le fabriquer

Info

Publication number
FR2331886A1
FR2331886A1 FR7634495A FR7634495A FR2331886A1 FR 2331886 A1 FR2331886 A1 FR 2331886A1 FR 7634495 A FR7634495 A FR 7634495A FR 7634495 A FR7634495 A FR 7634495A FR 2331886 A1 FR2331886 A1 FR 2331886A1
Authority
FR
France
Prior art keywords
manufacturing
reverse switching
switching rectifier
rectifier
reverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7634495A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2331886A1 publication Critical patent/FR2331886A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
FR7634495A 1975-11-17 1976-11-16 Redresseur a commutation inverse et procede pour le fabriquer Withdrawn FR2331886A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/632,433 US4080620A (en) 1975-11-17 1975-11-17 Reverse switching rectifier and method for making same

Publications (1)

Publication Number Publication Date
FR2331886A1 true FR2331886A1 (fr) 1977-06-10

Family

ID=24535507

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7634495A Withdrawn FR2331886A1 (fr) 1975-11-17 1976-11-16 Redresseur a commutation inverse et procede pour le fabriquer

Country Status (7)

Country Link
US (1) US4080620A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5263078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE848225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1065494A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2331886A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1562509A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339256A1 (fr) * 1976-01-22 1977-08-19 Westinghouse Electric Corp Redresseur a commutation inverse

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device
DE2815606A1 (de) * 1978-04-11 1979-10-31 Fiz Tekhn I Im A F Joffe Akade Thyristor
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
US4638553A (en) * 1982-12-08 1987-01-27 International Rectifier Corporation Method of manufacture of semiconductor device
JPH08242009A (ja) * 1994-12-02 1996-09-17 Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg パワー半導体デバイス
US7868352B2 (en) * 2008-09-23 2011-01-11 Optiswitch Technology Corporation Silicon break over diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048159A1 (de) * 1969-10-01 1971-04-08 Hitachi Ltd Halbleitervorrichtung und Verfahren zu ihrer Herstellung
FR2080988A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-02-13 1971-11-26 Siemens Ag
FR2195072A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-07-28 1974-03-01 Semikron Gleichrichterbau

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1975-01-09

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048159A1 (de) * 1969-10-01 1971-04-08 Hitachi Ltd Halbleitervorrichtung und Verfahren zu ihrer Herstellung
FR2080988A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-02-13 1971-11-26 Siemens Ag
FR2195072A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-07-28 1974-03-01 Semikron Gleichrichterbau

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339256A1 (fr) * 1976-01-22 1977-08-19 Westinghouse Electric Corp Redresseur a commutation inverse

Also Published As

Publication number Publication date
BE848225A (fr) 1977-05-10
JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-10-24
JPS5263078A (en) 1977-05-25
GB1562509A (en) 1980-03-12
IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-03
US4080620A (en) 1978-03-21
CA1065494A (en) 1979-10-30

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Legal Events

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ST Notification of lapse