FR2339256A1 - Redresseur a commutation inverse - Google Patents
Redresseur a commutation inverseInfo
- Publication number
- FR2339256A1 FR2339256A1 FR7701236A FR7701236A FR2339256A1 FR 2339256 A1 FR2339256 A1 FR 2339256A1 FR 7701236 A FR7701236 A FR 7701236A FR 7701236 A FR7701236 A FR 7701236A FR 2339256 A1 FR2339256 A1 FR 2339256A1
- Authority
- FR
- France
- Prior art keywords
- reverse switching
- switching rectifier
- rectifier
- reverse
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65130376A | 1976-01-22 | 1976-01-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2339256A1 true FR2339256A1 (fr) | 1977-08-19 |
Family
ID=24612347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7701236A Withdrawn FR2339256A1 (fr) | 1976-01-22 | 1977-01-17 | Redresseur a commutation inverse |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE850349A (fr) |
CA (1) | CA1070434A (fr) |
DE (1) | DE2701991A1 (fr) |
FR (1) | FR2339256A1 (fr) |
GB (1) | GB1568526A (fr) |
IN (1) | IN144812B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2537778A1 (fr) * | 1982-12-08 | 1984-06-15 | Int Rectifier Corp | Procede de metallisation d'une plaquette de silicium monocristallin |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1639459A1 (de) * | 1968-03-16 | 1971-04-01 | Tokyo Shibaura Electric Co | Halbleitergesteuerte Gleichrichtervorrichtung mit verbesserten Einschalteigenschaften;ein Verfahren zur Herstellung einer derartigen Gleichrichtervorrichtung |
DE2048159A1 (de) * | 1969-10-01 | 1971-04-08 | Hitachi Ltd | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
FR2254107A1 (en) * | 1973-12-05 | 1975-07-04 | Asea Ab | Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations |
FR2331886A1 (fr) * | 1975-11-17 | 1977-06-10 | Westinghouse Electric Corp | Redresseur a commutation inverse et procede pour le fabriquer |
-
1976
- 1976-12-24 IN IN2259/CAL/1976A patent/IN144812B/en unknown
- 1976-12-29 CA CA268,878A patent/CA1070434A/fr not_active Expired
-
1977
- 1977-01-12 GB GB1099/77A patent/GB1568526A/en not_active Expired
- 1977-01-13 BE BE174052A patent/BE850349A/fr unknown
- 1977-01-17 FR FR7701236A patent/FR2339256A1/fr not_active Withdrawn
- 1977-01-19 DE DE19772701991 patent/DE2701991A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1639459A1 (de) * | 1968-03-16 | 1971-04-01 | Tokyo Shibaura Electric Co | Halbleitergesteuerte Gleichrichtervorrichtung mit verbesserten Einschalteigenschaften;ein Verfahren zur Herstellung einer derartigen Gleichrichtervorrichtung |
DE2048159A1 (de) * | 1969-10-01 | 1971-04-08 | Hitachi Ltd | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
FR2254107A1 (en) * | 1973-12-05 | 1975-07-04 | Asea Ab | Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations |
FR2331886A1 (fr) * | 1975-11-17 | 1977-06-10 | Westinghouse Electric Corp | Redresseur a commutation inverse et procede pour le fabriquer |
Non-Patent Citations (1)
Title |
---|
EXBK/70 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2537778A1 (fr) * | 1982-12-08 | 1984-06-15 | Int Rectifier Corp | Procede de metallisation d'une plaquette de silicium monocristallin |
Also Published As
Publication number | Publication date |
---|---|
IN144812B (fr) | 1978-07-15 |
CA1070434A (fr) | 1980-01-22 |
DE2701991A1 (de) | 1977-07-28 |
GB1568526A (en) | 1980-05-29 |
BE850349A (fr) | 1977-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK578977A (da) | Vante | |
SE7703306L (sv) | Motstandsalstrande simdrekt | |
IT1072284B (it) | Condensatore elettrico a strati perfezionato | |
FR2336825A1 (fr) | Regulateur de commutation | |
BR7707225A (pt) | Unidade de retificadores | |
DE3218952A1 (de) | Gleichrichterschaltung | |
BR7705272A (pt) | Conversor linear/rotativo | |
SE424485B (sv) | Tyristor | |
BE856300A (fr) | Agencement de commutation | |
BE852225A (fr) | Selecteur de commutation tournant | |
FR2339295A1 (fr) | Circuit de commutation a thyristor interrupteur | |
NL7700105A (nl) | Electrische schakelinrichting. | |
AT375214B (de) | Hochstrom-gleichrichteranordnung | |
IT1085731B (it) | Tiristore | |
FR2331886A1 (fr) | Redresseur a commutation inverse et procede pour le fabriquer | |
IT1084637B (it) | Motore monofase a passo a passo. | |
DK152157C (da) | Gruppeafbryder | |
BE850349A (fr) | Redresseur a commutation inverse | |
BE879488A (fr) | Circuit de commutation a division de temps | |
FR2347781A1 (fr) | Thyristor a conduction inverse | |
SE7712240L (sv) | Omkopplare | |
BE858671A (fr) | Perfectionnements aux etages de commutation electroniques | |
JPS52147722A (en) | Switching dccdc converter | |
IT1077914B (it) | Complesso di commutazione | |
FR2274140A1 (fr) | Thyristor a conduction inverse |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |