JPS5541536B2 - - Google Patents
Info
- Publication number
- JPS5541536B2 JPS5541536B2 JP13742776A JP13742776A JPS5541536B2 JP S5541536 B2 JPS5541536 B2 JP S5541536B2 JP 13742776 A JP13742776 A JP 13742776A JP 13742776 A JP13742776 A JP 13742776A JP S5541536 B2 JPS5541536 B2 JP S5541536B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/632,433 US4080620A (en) | 1975-11-17 | 1975-11-17 | Reverse switching rectifier and method for making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5263078A JPS5263078A (en) | 1977-05-25 |
| JPS5541536B2 true JPS5541536B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-10-24 |
Family
ID=24535507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51137427A Granted JPS5263078A (en) | 1975-11-17 | 1976-11-17 | Semiconductor switching element |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN144812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-01-22 | 1978-07-15 | Westinghouse Electric Corp | |
| JPS549585A (en) * | 1977-06-24 | 1979-01-24 | Hitachi Ltd | High-dielectric-strength semiconductor device |
| DE2815606A1 (de) * | 1978-04-11 | 1979-10-31 | Fiz Tekhn I Im A F Joffe Akade | Thyristor |
| US4278476A (en) * | 1979-12-05 | 1981-07-14 | Westinghouse Electric Corp. | Method of making ion implanted reverse-conducting thyristor |
| DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
| US4638553A (en) * | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
| JPH08242009A (ja) * | 1994-12-02 | 1996-09-17 | Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg | パワー半導体デバイス |
| US7868352B2 (en) * | 2008-09-23 | 2011-01-11 | Optiswitch Technology Corporation | Silicon break over diode |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| US3688164A (en) * | 1969-10-01 | 1972-08-29 | Hitachi Ltd | Multi-layer-type switch device |
| BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
| DE2006729C3 (de) * | 1970-02-13 | 1980-02-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Halbleiterdiode |
| DE2211116A1 (de) * | 1972-03-08 | 1973-09-13 | Semikron Gleichrichterbau | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps |
| DE2237086C3 (de) * | 1972-07-28 | 1979-01-18 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Steuerbares Halbleitergleichrichterbauelement |
| JPS501633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-05-04 | 1975-01-09 |
-
1975
- 1975-11-17 US US05/632,433 patent/US4080620A/en not_active Expired - Lifetime
-
1976
- 1976-11-03 IN IN1993/CAL/76A patent/IN147060B/en unknown
- 1976-11-10 BE BE172270A patent/BE848225A/xx unknown
- 1976-11-11 GB GB46913/76A patent/GB1562509A/en not_active Expired
- 1976-11-16 FR FR7634495A patent/FR2331886A1/fr not_active Withdrawn
- 1976-11-16 CA CA265,764A patent/CA1065494A/en not_active Expired
- 1976-11-17 JP JP51137427A patent/JPS5263078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2331886A1 (fr) | 1977-06-10 |
| US4080620A (en) | 1978-03-21 |
| JPS5263078A (en) | 1977-05-25 |
| GB1562509A (en) | 1980-03-12 |
| IN147060B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-11-03 |
| BE848225A (fr) | 1977-05-10 |
| CA1065494A (en) | 1979-10-30 |