BE848225A - Redresseur a commutation inverse et procede pour le fabriquer, - Google Patents
Redresseur a commutation inverse et procede pour le fabriquer,Info
- Publication number
- BE848225A BE848225A BE172270A BE172270A BE848225A BE 848225 A BE848225 A BE 848225A BE 172270 A BE172270 A BE 172270A BE 172270 A BE172270 A BE 172270A BE 848225 A BE848225 A BE 848225A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- reverse switching
- switching rectifier
- rectifier
- reverse
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/632,433 US4080620A (en) | 1975-11-17 | 1975-11-17 | Reverse switching rectifier and method for making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE848225A true BE848225A (fr) | 1977-05-10 |
Family
ID=24535507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE172270A BE848225A (fr) | 1975-11-17 | 1976-11-10 | Redresseur a commutation inverse et procede pour le fabriquer, |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4080620A (fr) |
| JP (1) | JPS5263078A (fr) |
| BE (1) | BE848225A (fr) |
| CA (1) | CA1065494A (fr) |
| FR (1) | FR2331886A1 (fr) |
| GB (1) | GB1562509A (fr) |
| IN (1) | IN147060B (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN144812B (fr) * | 1976-01-22 | 1978-07-15 | Westinghouse Electric Corp | |
| JPS549585A (en) * | 1977-06-24 | 1979-01-24 | Hitachi Ltd | High-dielectric-strength semiconductor device |
| DE2815606A1 (de) * | 1978-04-11 | 1979-10-31 | Fiz Tekhn I Im A F Joffe Akade | Thyristor |
| US4278476A (en) * | 1979-12-05 | 1981-07-14 | Westinghouse Electric Corp. | Method of making ion implanted reverse-conducting thyristor |
| DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
| US4638553A (en) * | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
| JPH08242009A (ja) * | 1994-12-02 | 1996-09-17 | Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg | パワー半導体デバイス |
| US7868352B2 (en) * | 2008-09-23 | 2011-01-11 | Optiswitch Technology Corporation | Silicon break over diode |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| US3688164A (en) * | 1969-10-01 | 1972-08-29 | Hitachi Ltd | Multi-layer-type switch device |
| BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
| DE2006729C3 (de) * | 1970-02-13 | 1980-02-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Halbleiterdiode |
| DE2211116A1 (de) * | 1972-03-08 | 1973-09-13 | Semikron Gleichrichterbau | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps |
| DE2237086C3 (de) * | 1972-07-28 | 1979-01-18 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Steuerbares Halbleitergleichrichterbauelement |
| JPS501633A (fr) * | 1973-05-04 | 1975-01-09 |
-
1975
- 1975-11-17 US US05/632,433 patent/US4080620A/en not_active Expired - Lifetime
-
1976
- 1976-11-03 IN IN1993/CAL/76A patent/IN147060B/en unknown
- 1976-11-10 BE BE172270A patent/BE848225A/fr unknown
- 1976-11-11 GB GB46913/76A patent/GB1562509A/en not_active Expired
- 1976-11-16 CA CA265,764A patent/CA1065494A/fr not_active Expired
- 1976-11-16 FR FR7634495A patent/FR2331886A1/fr not_active Withdrawn
- 1976-11-17 JP JP51137427A patent/JPS5263078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4080620A (en) | 1978-03-21 |
| JPS5541536B2 (fr) | 1980-10-24 |
| IN147060B (fr) | 1979-11-03 |
| JPS5263078A (en) | 1977-05-25 |
| FR2331886A1 (fr) | 1977-06-10 |
| GB1562509A (en) | 1980-03-12 |
| CA1065494A (fr) | 1979-10-30 |
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