FR2195072A1 - - Google Patents

Info

Publication number
FR2195072A1
FR2195072A1 FR7326850A FR7326850A FR2195072A1 FR 2195072 A1 FR2195072 A1 FR 2195072A1 FR 7326850 A FR7326850 A FR 7326850A FR 7326850 A FR7326850 A FR 7326850A FR 2195072 A1 FR2195072 A1 FR 2195072A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7326850A
Other languages
French (fr)
Other versions
FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2195072A1 publication Critical patent/FR2195072A1/fr
Application granted granted Critical
Publication of FR2195072B1 publication Critical patent/FR2195072B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
FR7326850A 1972-07-28 1973-07-23 Expired FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2237086A DE2237086C3 (de) 1972-07-28 1972-07-28 Steuerbares Halbleitergleichrichterbauelement

Publications (2)

Publication Number Publication Date
FR2195072A1 true FR2195072A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-03-01
FR2195072B1 FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-09-09

Family

ID=5851972

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7326850A Expired FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-07-28 1973-07-23

Country Status (11)

Country Link
US (1) US3864726A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4960179A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AR (1) AR195353A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR7304811D0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH567802A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2237086C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES193616Y (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1445738A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT992742B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE386011B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331886A1 (fr) * 1975-11-17 1977-06-10 Westinghouse Electric Corp Redresseur a commutation inverse et procede pour le fabriquer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445974A (en) * 1993-03-31 1995-08-29 Siemens Components, Inc. Method of fabricating a high-voltage, vertical-trench semiconductor device
CN112420815B (zh) * 2020-11-19 2021-09-24 电子科技大学 一种碳化硅门极可关断晶闸管及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1599432A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1967-12-28 1970-07-15

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1599432A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1967-12-28 1970-07-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331886A1 (fr) * 1975-11-17 1977-06-10 Westinghouse Electric Corp Redresseur a commutation inverse et procede pour le fabriquer

Also Published As

Publication number Publication date
ES193616Y (es) 1975-02-16
SE386011B (sv) 1976-07-26
DE2237086A1 (de) 1974-02-07
GB1445738A (en) 1976-08-11
IT992742B (it) 1975-09-30
ES193616U (es) 1974-10-16
JPS4960179A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-11
DE2237086C3 (de) 1979-01-18
CH567802A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-10-15
AR195353A1 (es) 1973-09-28
DE2237086B2 (de) 1978-05-18
BR7304811D0 (pt) 1975-08-26
US3864726A (en) 1975-02-04
FR2195072B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-09-09

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Legal Events

Date Code Title Description
ST Notification of lapse