JPS4960179A - - Google Patents

Info

Publication number
JPS4960179A
JPS4960179A JP48067863A JP6786373A JPS4960179A JP S4960179 A JPS4960179 A JP S4960179A JP 48067863 A JP48067863 A JP 48067863A JP 6786373 A JP6786373 A JP 6786373A JP S4960179 A JPS4960179 A JP S4960179A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48067863A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4960179A publication Critical patent/JPS4960179A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
JP48067863A 1972-07-28 1973-06-18 Pending JPS4960179A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2237086A DE2237086C3 (de) 1972-07-28 1972-07-28 Steuerbares Halbleitergleichrichterbauelement

Publications (1)

Publication Number Publication Date
JPS4960179A true JPS4960179A (ja) 1974-06-11

Family

ID=5851972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48067863A Pending JPS4960179A (ja) 1972-07-28 1973-06-18

Country Status (11)

Country Link
US (1) US3864726A (ja)
JP (1) JPS4960179A (ja)
AR (1) AR195353A1 (ja)
BR (1) BR7304811D0 (ja)
CH (1) CH567802A5 (ja)
DE (1) DE2237086C3 (ja)
ES (1) ES193616Y (ja)
FR (1) FR2195072B1 (ja)
GB (1) GB1445738A (ja)
IT (1) IT992742B (ja)
SE (1) SE386011B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080620A (en) * 1975-11-17 1978-03-21 Westinghouse Electric Corporation Reverse switching rectifier and method for making same
US5445974A (en) * 1993-03-31 1995-08-29 Siemens Components, Inc. Method of fabricating a high-voltage, vertical-trench semiconductor device
CN112420815B (zh) * 2020-11-19 2021-09-24 电子科技大学 一种碳化硅门极可关断晶闸管及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
SE352779B (ja) * 1967-12-28 1973-01-08 Asea Ab

Also Published As

Publication number Publication date
DE2237086B2 (de) 1978-05-18
DE2237086C3 (de) 1979-01-18
AR195353A1 (es) 1973-09-28
GB1445738A (en) 1976-08-11
ES193616Y (es) 1975-02-16
US3864726A (en) 1975-02-04
CH567802A5 (ja) 1975-10-15
BR7304811D0 (pt) 1975-08-26
FR2195072A1 (ja) 1974-03-01
IT992742B (it) 1975-09-30
SE386011B (sv) 1976-07-26
DE2237086A1 (de) 1974-02-07
FR2195072B1 (ja) 1977-09-09
ES193616U (es) 1974-10-16

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