CA1060993A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- CA1060993A CA1060993A CA208,942A CA208942A CA1060993A CA 1060993 A CA1060993 A CA 1060993A CA 208942 A CA208942 A CA 208942A CA 1060993 A CA1060993 A CA 1060993A
- Authority
- CA
- Canada
- Prior art keywords
- source
- substrate
- gate
- drain
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000005669 field effect Effects 0.000 claims abstract description 3
- 238000009413 insulation Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000013459 approach Methods 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 6
- 238000010893 electron trap Methods 0.000 claims description 5
- 230000009183 running Effects 0.000 claims 2
- 230000003334 potential effect Effects 0.000 claims 1
- 230000015654 memory Effects 0.000 description 46
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VLQGDKKHHCKIOJ-UHFFFAOYSA-N NNOS Chemical compound NNOS VLQGDKKHHCKIOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679373A JPS5613029B2 (de) | 1973-09-21 | 1973-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1060993A true CA1060993A (en) | 1979-08-21 |
Family
ID=14442758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA208,942A Expired CA1060993A (en) | 1973-09-21 | 1974-09-11 | Nonvolatile semiconductor memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5613029B2 (de) |
| CA (1) | CA1060993A (de) |
| DE (1) | DE2444906C3 (de) |
| GB (1) | GB1474745A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458376A (en) * | 1977-10-19 | 1979-05-11 | Agency Of Ind Science & Technol | Semiconductor memory unit and its writing method |
| US4375087C1 (en) * | 1980-04-09 | 2002-01-01 | Hughes Aircraft Co | Electrically erasable programmable read-only memory |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1175601A (en) * | 1966-03-28 | 1969-12-23 | Matsushita Electronics Corp | Insulated-Gate Field-Effect Transistor |
| DE2201028C3 (de) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
-
1973
- 1973-09-21 JP JP10679373A patent/JPS5613029B2/ja not_active Expired
-
1974
- 1974-09-09 GB GB3924474A patent/GB1474745A/en not_active Expired
- 1974-09-11 CA CA208,942A patent/CA1060993A/en not_active Expired
- 1974-09-19 DE DE19742444906 patent/DE2444906C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2444906B2 (de) | 1981-05-27 |
| DE2444906A1 (de) | 1975-04-24 |
| DE2444906C3 (de) | 1982-02-04 |
| GB1474745A (en) | 1977-05-25 |
| JPS5613029B2 (de) | 1981-03-25 |
| JPS5057779A (de) | 1975-05-20 |
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