CA1047171A - Manufacture of semiconductor insulating films by electrophoresis - Google Patents

Manufacture of semiconductor insulating films by electrophoresis

Info

Publication number
CA1047171A
CA1047171A CA243,160A CA243160A CA1047171A CA 1047171 A CA1047171 A CA 1047171A CA 243160 A CA243160 A CA 243160A CA 1047171 A CA1047171 A CA 1047171A
Authority
CA
Canada
Prior art keywords
slice
dispersion
semiconductor
glass
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA243,160A
Other languages
English (en)
French (fr)
Inventor
Maria A. A. A. Collaris
Henricus A. Debruijn
Petrus G. H. J. Smits
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1047171A publication Critical patent/CA1047171A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Conductive Materials (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
CA243,160A 1975-01-16 1976-01-08 Manufacture of semiconductor insulating films by electrophoresis Expired CA1047171A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7500492A NL7500492A (nl) 1975-01-16 1975-01-16 Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.

Publications (1)

Publication Number Publication Date
CA1047171A true CA1047171A (en) 1979-01-23

Family

ID=19822999

Family Applications (1)

Application Number Title Priority Date Filing Date
CA243,160A Expired CA1047171A (en) 1975-01-16 1976-01-08 Manufacture of semiconductor insulating films by electrophoresis

Country Status (11)

Country Link
JP (1) JPS556292B2 (sv)
AU (1) AU504812B2 (sv)
CA (1) CA1047171A (sv)
CH (1) CH599677A5 (sv)
DE (1) DE2600321C3 (sv)
FR (1) FR2298189A1 (sv)
GB (1) GB1532471A (sv)
IT (1) IT1054204B (sv)
MX (1) MX143640A (sv)
NL (1) NL7500492A (sv)
SE (1) SE7600278L (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN147572B (sv) * 1977-02-24 1980-04-19 Rca Corp
IN147578B (sv) * 1977-02-24 1980-04-19 Rca Corp
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2158463B (en) * 1982-04-06 1986-11-19 Stc Plc Forming ceramic films
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
DE4343810C1 (de) * 1993-12-22 1995-04-20 Roland Man Druckmasch Fotoelektrischer Meßkopf

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
IE33405B1 (en) * 1968-12-09 1974-06-12 Gen Electric Semiconductor wafers sub-dividable into pellets and methods of fabricating same
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices

Also Published As

Publication number Publication date
DE2600321C3 (de) 1981-09-03
FR2298189B1 (sv) 1982-04-16
IT1054204B (it) 1981-11-10
DE2600321B2 (de) 1980-12-04
JPS556292B2 (sv) 1980-02-15
CH599677A5 (sv) 1978-05-31
AU1018776A (en) 1977-07-21
AU504812B2 (en) 1979-11-01
MX143640A (es) 1981-06-17
SE7600278L (sv) 1976-07-19
JPS5197375A (sv) 1976-08-26
NL7500492A (nl) 1976-07-20
DE2600321A1 (de) 1976-07-22
FR2298189A1 (fr) 1976-08-13
GB1532471A (en) 1978-11-15

Similar Documents

Publication Publication Date Title
US6312766B1 (en) Article comprising fluorinated diamond-like carbon and method for fabricating article
EP0725440B1 (en) Silicon carbide metal diffusion barrier layer
JP2542876B2 (ja) 薄膜過電圧保護装置
CA1296878C (en) Electrical overstress protection material and process
EP0009978B1 (en) Hybrid type integrated circuit device
CA1047171A (en) Manufacture of semiconductor insulating films by electrophoresis
CN1655334A (zh) 接触结构制造方法
CN1429400A (zh) 用于在碳化硅中形成通孔的方法以及所获得的器件和电路
JPH06279592A (ja) 半導体性の静電気散逸性ポリマー複合材料およびその製造法
CA1251418A (en) Method of producing discharge display device
KR20100098380A (ko) 원자 층 증착 공정
JP2856847B2 (ja) 不活性化層を備える半導体デバイス
US7078795B2 (en) High voltage module and method for producing same
RU2001119053A (ru) Композиционный материал и его применение
CN1951162B (zh) 元件配置基板及其制备方法
JPH09172066A (ja) 風橋の形成方法
US20040119169A1 (en) Radio frequency integrated circuit having increased substrate resistance enabling three dimensional interconnection with feedthroughs
KR101022954B1 (ko) 방열핀과 이 방열핀을 포함하는 패키지 기판 및 그제조방법
US6087729A (en) Low dielectric constant composite film for integrated circuits of an inorganic aerogel and an organic filler grafted to the inorganic material
JPS62103372A (ja) プラズマを使用した化学蒸気堆積による薄膜形成方法および装置
US6946336B2 (en) Method of making a nanoscale electronic device
CN105657303A (zh) 一种用于激光电视散热的强散热结构及其制备方法
JPS61267329A (ja) ＩｎＰのパツシベ−シヨン方法および用途
KR20220085011A (ko) 고방열 고분자 조성물 및 이를 포함하는 고방열 성형품
CN113881284A (zh) 纳米石墨打印液及其制备方法、有机发光二极管