MX143640A - Mejoras en metodo para fabricar dispositivos semiconductores - Google Patents
Mejoras en metodo para fabricar dispositivos semiconductoresInfo
- Publication number
- MX143640A MX143640A MX163017A MX16301776A MX143640A MX 143640 A MX143640 A MX 143640A MX 163017 A MX163017 A MX 163017A MX 16301776 A MX16301776 A MX 16301776A MX 143640 A MX143640 A MX 143640A
- Authority
- MX
- Mexico
- Prior art keywords
- semiconducting devices
- manufacturing
- manufacturing semiconducting
- devices
- semiconducting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7500492A NL7500492A (nl) | 1975-01-16 | 1975-01-16 | Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
MX143640A true MX143640A (es) | 1981-06-17 |
Family
ID=19822999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX163017A MX143640A (es) | 1975-01-16 | 1976-01-13 | Mejoras en metodo para fabricar dispositivos semiconductores |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS556292B2 (es) |
AU (1) | AU504812B2 (es) |
CA (1) | CA1047171A (es) |
CH (1) | CH599677A5 (es) |
DE (1) | DE2600321C3 (es) |
FR (1) | FR2298189A1 (es) |
GB (1) | GB1532471A (es) |
IT (1) | IT1054204B (es) |
MX (1) | MX143640A (es) |
NL (1) | NL7500492A (es) |
SE (1) | SE7600278L (es) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN147578B (es) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
IN147572B (es) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
GB2117796B (en) * | 1982-04-06 | 1985-06-19 | Standard Telephones Cables Ltd | Forming ceramic layers; dielectric structures |
GB2158463B (en) * | 1982-04-06 | 1986-11-19 | Stc Plc | Forming ceramic films |
GB2117795A (en) * | 1982-04-06 | 1983-10-19 | Standard Telephones Cables Ltd | Fabricating capacitors; forming ceramic films |
DE4343810C1 (de) * | 1993-12-22 | 1995-04-20 | Roland Man Druckmasch | Fotoelektrischer Meßkopf |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3303399A (en) * | 1964-01-30 | 1967-02-07 | Ibm | Glasses for encapsulating semiconductor devices and resultant devices |
IE33405B1 (en) * | 1968-12-09 | 1974-06-12 | Gen Electric | Semiconductor wafers sub-dividable into pellets and methods of fabricating same |
US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
-
1975
- 1975-01-16 NL NL7500492A patent/NL7500492A/xx not_active Application Discontinuation
-
1976
- 1976-01-07 DE DE2600321A patent/DE2600321C3/de not_active Expired
- 1976-01-08 CA CA243,160A patent/CA1047171A/en not_active Expired
- 1976-01-12 AU AU10187/76A patent/AU504812B2/en not_active Expired
- 1976-01-13 MX MX163017A patent/MX143640A/es unknown
- 1976-01-13 IT IT19210/76A patent/IT1054204B/it active
- 1976-01-13 SE SE7600278A patent/SE7600278L/ not_active Application Discontinuation
- 1976-01-13 CH CH34376A patent/CH599677A5/xx not_active IP Right Cessation
- 1976-01-13 JP JP251576A patent/JPS556292B2/ja not_active Expired
- 1976-01-13 GB GB1175/76A patent/GB1532471A/en not_active Expired
- 1976-01-16 FR FR7601087A patent/FR2298189A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
AU504812B2 (en) | 1979-11-01 |
JPS556292B2 (es) | 1980-02-15 |
GB1532471A (en) | 1978-11-15 |
AU1018776A (en) | 1977-07-21 |
JPS5197375A (es) | 1976-08-26 |
DE2600321A1 (de) | 1976-07-22 |
FR2298189B1 (es) | 1982-04-16 |
DE2600321B2 (de) | 1980-12-04 |
IT1054204B (it) | 1981-11-10 |
CH599677A5 (es) | 1978-05-31 |
SE7600278L (sv) | 1976-07-19 |
NL7500492A (nl) | 1976-07-20 |
CA1047171A (en) | 1979-01-23 |
FR2298189A1 (fr) | 1976-08-13 |
DE2600321C3 (de) | 1981-09-03 |
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