BR112021016310A2 - Filtro de absorção óptico para dispositivo integrado - Google Patents
Filtro de absorção óptico para dispositivo integrado Download PDFInfo
- Publication number
- BR112021016310A2 BR112021016310A2 BR112021016310-7A BR112021016310A BR112021016310A2 BR 112021016310 A2 BR112021016310 A2 BR 112021016310A2 BR 112021016310 A BR112021016310 A BR 112021016310A BR 112021016310 A2 BR112021016310 A2 BR 112021016310A2
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor
- layer
- optical
- absorption layer
- filter
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 259
- 230000003287 optical effect Effects 0.000 title claims abstract description 235
- 239000004065 semiconductor Substances 0.000 claims abstract description 374
- 230000005855 radiation Effects 0.000 claims abstract description 140
- 230000005284 excitation Effects 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 239000006096 absorbing agent Substances 0.000 claims description 184
- 238000006243 chemical reaction Methods 0.000 claims description 129
- 238000000151 deposition Methods 0.000 claims description 37
- 239000003989 dielectric material Substances 0.000 claims description 34
- 238000012876 topography Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 238000001917 fluorescence detection Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000001228 spectrum Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical group CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 4
- 230000006872 improvement Effects 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 89
- 238000004458 analytical method Methods 0.000 abstract description 16
- 239000002356 single layer Substances 0.000 abstract 1
- 125000003729 nucleotide group Chemical group 0.000 description 36
- 230000008569 process Effects 0.000 description 28
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 239000002773 nucleotide Substances 0.000 description 25
- 239000000969 carrier Substances 0.000 description 23
- 238000003860 storage Methods 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 239000000523 sample Substances 0.000 description 20
- 238000012546 transfer Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 13
- 238000000926 separation method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 230000014509 gene expression Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000001514 detection method Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 108020004414 DNA Proteins 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 9
- 230000035508 accumulation Effects 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 8
- 239000012491 analyte Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910007709 ZnTe Inorganic materials 0.000 description 7
- 230000008033 biological extinction Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 108020004707 nucleic acids Proteins 0.000 description 6
- 102000039446 nucleic acids Human genes 0.000 description 6
- 150000007523 nucleic acids Chemical class 0.000 description 6
- 238000012163 sequencing technique Methods 0.000 description 6
- 230000002123 temporal effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 238000002866 fluorescence resonance energy transfer Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 239000004020 conductor Substances 0.000 description 4
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- 230000000670 limiting effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 230000002068 genetic effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000037361 pathway Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 239000012114 Alexa Fluor 647 Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 102000053602 DNA Human genes 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 206010056740 Genital discharge Diseases 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 108091028043 Nucleic acid sequence Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000004820 blood count Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002073 fluorescence micrograph Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- -1 silicon carbon hydrogen Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
- G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6486—Measuring fluorescence of biological material, e.g. DNA, RNA, cells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/12—Specific details about manufacturing devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
- G01N2021/6471—Special filters, filter wheel
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Molecular Biology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Optical Integrated Circuits (AREA)
- Optical Filters (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962813997P | 2019-03-05 | 2019-03-05 | |
| US62/813,997 | 2019-03-05 | ||
| US201962831237P | 2019-04-09 | 2019-04-09 | |
| US62/831,237 | 2019-04-09 | ||
| PCT/US2020/020847 WO2020180899A1 (en) | 2019-03-05 | 2020-03-03 | Optical absorption filter for an integrated device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112021016310A2 true BR112021016310A2 (pt) | 2021-10-13 |
Family
ID=70155332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112021016310-7A BR112021016310A2 (pt) | 2019-03-05 | 2020-03-03 | Filtro de absorção óptico para dispositivo integrado |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US20200284957A1 (https=) |
| EP (1) | EP3924723A1 (https=) |
| JP (1) | JP2022523997A (https=) |
| KR (1) | KR20210132176A (https=) |
| CN (1) | CN113544493A (https=) |
| AU (1) | AU2020231492A1 (https=) |
| BR (1) | BR112021016310A2 (https=) |
| CA (1) | CA3131274A1 (https=) |
| MX (1) | MX2021010690A (https=) |
| TW (1) | TW202107066A (https=) |
| WO (1) | WO2020180899A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI576617B (zh) * | 2012-07-16 | 2017-04-01 | 唯亞威方案公司 | 光學濾波器及感測器系統 |
| US11604307B1 (en) * | 2019-09-24 | 2023-03-14 | United States Of America As Represented By The Administrator Of Nasa | Dark mirror optical stack and related systems |
| US12283602B2 (en) * | 2020-10-09 | 2025-04-22 | Spectricity | Image sensor with improved color accuracy |
| CN113740961B (zh) * | 2021-08-26 | 2022-10-21 | 赛丽科技(苏州)有限公司 | 一种集成介质光波导的光吸收器和光吸收芯片 |
| CN118216003A (zh) * | 2021-10-22 | 2024-06-18 | 伊鲁米纳公司 | 半导体光感测 |
| KR102782344B1 (ko) | 2022-04-08 | 2025-03-18 | 한국전자통신연구원 | 삽입 손실과 반사 손실을 개선할 수 있는 도파관 모듈 |
| CN114936519B (zh) * | 2022-05-12 | 2025-09-05 | 中国人民解放军国防科技大学 | 一种可控模式光滤波器及优化方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD227831A1 (de) * | 1984-08-02 | 1985-09-25 | Werk Fernsehelektronik Veb | Verfahren zur herstellung einer schicht mit bereichen unterschiedlicher optischer transmission |
| JPH04133004A (ja) * | 1990-09-25 | 1992-05-07 | Matsushita Electric Works Ltd | 紫外赤外線カットフィルタ |
| IL106265A (en) * | 1992-07-13 | 1999-07-14 | Hughes Aircraft Co | Extrinsic semiconductor optical filter |
| JPH0812316A (ja) * | 1994-06-29 | 1996-01-16 | A G Technol Kk | シリコン系薄膜のスパッタリング成膜方法 |
| AU5802698A (en) * | 1996-12-19 | 1998-07-15 | Energy Conversion Devices Inc. | Selective solar radiation control coatings for windows and plastic films characterized by an absence of silver |
| US6572975B2 (en) * | 2001-08-24 | 2003-06-03 | General Electric Company | Optically coated article and method for its preparation |
| US7031566B2 (en) * | 2002-06-04 | 2006-04-18 | Lake Shore Cryotronics, Inc. | Spectral filter for green and shorter wavelengths |
| AU2003302230A1 (en) * | 2002-10-16 | 2004-06-18 | Lake Shore Cryotronics, Inc. | Method of manufacturing a spectral filter for green and longer wavelengths |
| US7221455B2 (en) * | 2004-01-20 | 2007-05-22 | The Regents Of The Unversity Of California | Integrated, fluorescence-detecting microanalytical system |
| JP4481720B2 (ja) * | 2004-05-14 | 2010-06-16 | 日本電産コパル株式会社 | Ｎｄフィルタ及び光量絞り装置 |
| US20050287040A1 (en) * | 2004-06-29 | 2005-12-29 | Molecular Devices Corporation | Fluorescence validation plate |
| JP4595687B2 (ja) * | 2004-07-20 | 2010-12-08 | 住友金属鉱山株式会社 | 吸収型多層膜ｎｄフィルター |
| JP4613706B2 (ja) * | 2004-11-24 | 2011-01-19 | 住友金属鉱山株式会社 | 吸収型多層膜ｎｄフィルター |
| JP2007012947A (ja) * | 2005-06-30 | 2007-01-18 | Citizen Electronics Co Ltd | 半導体受光装置 |
| TWI288252B (en) * | 2005-08-01 | 2007-10-11 | Asia Optical Co Inc | Neutral filter able to improve the flatness of the spectrum of the penetrating light |
| WO2007095172A2 (en) * | 2006-02-14 | 2007-08-23 | Massachusetts Institute Of Technology | Light-absorbing structure and methods of making |
| US7903338B1 (en) * | 2006-07-08 | 2011-03-08 | Cirrex Systems Llc | Method and system for managing light at an optical interface |
| US8665520B2 (en) * | 2006-08-30 | 2014-03-04 | Canon Denshi Kabushiki Kaisha | Neutral density optical filter and image pickup apparatus |
| JP2008102363A (ja) * | 2006-10-19 | 2008-05-01 | Nidec Copal Corp | Ｎｄフィルタ及びこれを用いた光量絞り装置 |
| US7489402B2 (en) * | 2006-12-04 | 2009-02-10 | Finesse Solutions, Llc | Optical collection geometries for phase fluorimetry |
| US20120099188A1 (en) * | 2010-10-20 | 2012-04-26 | AEgis Technologies Group, Inc. | Laser Protection Structures and Methods of Fabrication |
| JP2012163756A (ja) * | 2011-02-07 | 2012-08-30 | Tanaka Engineering Inc | 低反射性遮光構造 |
| TWI576617B (zh) * | 2012-07-16 | 2017-04-01 | 唯亞威方案公司 | 光學濾波器及感測器系統 |
| US9727178B2 (en) * | 2013-09-05 | 2017-08-08 | Apple Inc. | Opaque white coating with non-conductive mirror |
| CN105917003A (zh) | 2013-11-17 | 2016-08-31 | 宽腾矽公司 | 用于生物和化学试样的快速分析的有源像素集成装置 |
| EP2986957B1 (en) * | 2014-05-01 | 2021-09-29 | Bio-Rad Laboratories, Inc. | Imaging assembly for emitted light |
| MX384725B (es) * | 2014-08-08 | 2025-03-14 | Quantum Si Inc | Dispositivo integrado con fuente de luz externa para el sondeo, detección y análisis de moléculas. |
| CN106796175B (zh) * | 2014-08-08 | 2021-01-05 | 宽腾矽公司 | 用于探测、检测和分析分子的光学系统和检测芯片 |
| EP3186617A4 (en) * | 2014-08-27 | 2018-04-25 | Pacific Biosciences Of California, Inc. | Arrays of integrated analytcal devices |
| KR101587643B1 (ko) * | 2014-10-14 | 2016-01-25 | 광운대학교 산학협력단 | 비훈색성 투과형 컬러필터 및 그 제조방법 |
| WO2016125236A1 (ja) * | 2015-02-02 | 2016-08-11 | 株式会社日立ハイテクノロジーズ | 多色蛍光分析装置 |
| US20160238759A1 (en) * | 2015-02-18 | 2016-08-18 | Materion Corporation | Near infrared optical interference filters with improved transmission |
| US10246742B2 (en) | 2015-05-20 | 2019-04-02 | Quantum-Si Incorporated | Pulsed laser and bioanalytic system |
| AU2016264737B2 (en) * | 2015-05-20 | 2021-09-09 | Quantum-Si Incorporated | Pulsed laser and bioanalytic system |
| US9968927B2 (en) * | 2015-05-22 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical biosensor device |
| WO2017010280A1 (ja) * | 2015-07-13 | 2017-01-19 | コニカミノルタ株式会社 | 熱線遮蔽フィルム |
| US9518923B1 (en) * | 2015-12-07 | 2016-12-13 | International Business Machines Corporation | System and methods for fluorescence detection |
| US9864116B2 (en) * | 2015-12-28 | 2018-01-09 | Apple Inc. | Electronic devices having infrared-transparent window coatings |
| BR112020000799A2 (pt) * | 2017-07-24 | 2020-07-14 | Quantum-Si Incorporated | estruturas fotônicas de rejeição óptica |
| JP7475129B2 (ja) * | 2018-11-28 | 2024-04-26 | キヤノン電子株式会社 | 遮光部材、遮光部材を用いた撮像装置 |
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- 2020-03-03 AU AU2020231492A patent/AU2020231492A1/en not_active Abandoned
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| EP3924723A1 (en) | 2021-12-22 |
| US20220011486A1 (en) | 2022-01-13 |
| MX2021010690A (es) | 2021-10-01 |
| CA3131274A1 (en) | 2020-09-10 |
| AU2020231492A1 (en) | 2021-09-16 |
| TW202107066A (zh) | 2021-02-16 |
| US20200284957A1 (en) | 2020-09-10 |
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