BR112015026316A2 - dispositivo emissor de luz - Google Patents
dispositivo emissor de luzInfo
- Publication number
- BR112015026316A2 BR112015026316A2 BR112015026316A BR112015026316A BR112015026316A2 BR 112015026316 A2 BR112015026316 A2 BR 112015026316A2 BR 112015026316 A BR112015026316 A BR 112015026316A BR 112015026316 A BR112015026316 A BR 112015026316A BR 112015026316 A2 BR112015026316 A2 BR 112015026316A2
- Authority
- BR
- Brazil
- Prior art keywords
- light
- emitting device
- transmitting member
- light emitting
- emitting
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
resumo patente de invenção: "dispositivo emissor de luz". a presente invenção refere-se a um dispositivo emissor de luz cujo objetivo é prover um dispositivo emissor de luz que apresente um tamanho menor e menos irregularidades de cor. o dispositivo emissor de luz inclui um elemento emissor de luz cuja superfície superior é uma face de extração de luz, um membro transmissor de luz que tem uma superfície superior e uma superfície inferior e cobre a face de extração de luz do elemento emissor de luz, um membro transmissor de luz que contém fósforo, uma superfície superior e uma superfície inferior do membro transmissor de luz que são superfícies planas e paralelas uma à outra e uma superfície lateral do membro transmissor de luz que tem um componente saliente que se projeta para o lado e fica em contato com a superfície inferior.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-086357 | 2013-04-17 | ||
JP2013086357 | 2013-04-17 | ||
PCT/JP2014/058530 WO2014171277A1 (ja) | 2013-04-17 | 2014-03-26 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112015026316A2 true BR112015026316A2 (pt) | 2017-07-25 |
BR112015026316B1 BR112015026316B1 (pt) | 2022-01-11 |
Family
ID=51731230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015026316-0A BR112015026316B1 (pt) | 2013-04-17 | 2014-03-26 | Dispositivo emissor de luz |
Country Status (5)
Country | Link |
---|---|
US (1) | US9496465B2 (pt) |
JP (1) | JP6444299B2 (pt) |
BR (1) | BR112015026316B1 (pt) |
MX (1) | MX349884B (pt) |
WO (1) | WO2014171277A1 (pt) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015204057A1 (de) * | 2015-03-06 | 2016-09-08 | Osram Gmbh | Herstellen eines Beleuchtungsmoduls |
JP2016167518A (ja) * | 2015-03-09 | 2016-09-15 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
JP6481559B2 (ja) * | 2015-08-18 | 2019-03-13 | 日亜化学工業株式会社 | 発光装置 |
JP6332294B2 (ja) * | 2015-11-30 | 2018-05-30 | 日亜化学工業株式会社 | 発光装置 |
US10510934B2 (en) | 2015-11-30 | 2019-12-17 | Nichia Corporation | Light emitting device |
JP6399017B2 (ja) | 2016-02-29 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置 |
CN109791968A (zh) | 2016-07-26 | 2019-05-21 | 克利公司 | 发光二极管、组件和相关方法 |
JP7082270B2 (ja) | 2017-08-28 | 2022-06-08 | 日亜化学工業株式会社 | 発光装置 |
JP6729537B2 (ja) | 2017-11-20 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6733646B2 (ja) | 2017-11-30 | 2020-08-05 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
US20190198720A1 (en) | 2017-12-22 | 2019-06-27 | Lumileds Llc | Particle systems and patterning for monolithic led arrays |
DE102018101170A1 (de) | 2018-01-19 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil |
JP6777127B2 (ja) * | 2018-03-30 | 2020-10-28 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN110323213B (zh) * | 2018-03-30 | 2024-05-03 | 日亚化学工业株式会社 | 发光装置的制造方法 |
US11121298B2 (en) | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US10923628B2 (en) | 2018-09-27 | 2021-02-16 | Lumileds Llc | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10964845B2 (en) | 2018-09-27 | 2021-03-30 | Lumileds Llc | Micro light emitting devices |
US11271033B2 (en) | 2018-09-27 | 2022-03-08 | Lumileds Llc | Micro light emitting devices |
US10811460B2 (en) | 2018-09-27 | 2020-10-20 | Lumileds Holding B.V. | Micrometer scale light emitting diode displays on patterned templates and substrates |
JP6940776B2 (ja) * | 2018-11-05 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
CN109802015B (zh) * | 2018-12-25 | 2024-02-20 | 广东晶科电子股份有限公司 | 一种半导体器件及其封装方法 |
WO2020212111A1 (en) | 2019-04-18 | 2020-10-22 | Lumileds Holding B.V. | Lighting device |
JP7288343B2 (ja) * | 2019-05-16 | 2023-06-07 | スタンレー電気株式会社 | 発光装置 |
US11101411B2 (en) * | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
CN111081850A (zh) * | 2019-12-03 | 2020-04-28 | 弘凯光电(深圳)有限公司 | Led封装结构及其制作方法 |
US11674795B2 (en) | 2019-12-18 | 2023-06-13 | Lumileds Llc | Miniature pattern projector using microLEDs and micro-optics |
US11923398B2 (en) | 2019-12-23 | 2024-03-05 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11404473B2 (en) | 2019-12-23 | 2022-08-02 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11688832B2 (en) | 2020-04-16 | 2023-06-27 | Creeled, Inc. | Light-altering material arrangements for light-emitting devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US12040432B2 (en) | 2020-10-30 | 2024-07-16 | Lumileds Llc | Light emitting diode devices with patterned TCO layer including different thicknesses |
US11631786B2 (en) | 2020-11-12 | 2023-04-18 | Lumileds Llc | III-nitride multi-wavelength LED arrays with etch stop layer |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
WO2023248771A1 (ja) * | 2022-06-21 | 2023-12-28 | 京セラ株式会社 | 発光装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
JP5526782B2 (ja) * | 2007-11-29 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP5278023B2 (ja) | 2009-02-18 | 2013-09-04 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP5482378B2 (ja) | 2009-04-20 | 2014-05-07 | 日亜化学工業株式会社 | 発光装置 |
JP2011204376A (ja) | 2010-03-24 | 2011-10-13 | Stanley Electric Co Ltd | 半導体発光装置 |
JP5572013B2 (ja) * | 2010-06-16 | 2014-08-13 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
JP5566785B2 (ja) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
JP2012038889A (ja) | 2010-08-06 | 2012-02-23 | Koito Mfg Co Ltd | 蛍光部材および発光モジュール |
JP2012079776A (ja) * | 2010-09-30 | 2012-04-19 | Citizen Holdings Co Ltd | 半導体発光装置及びその製造方法 |
JP2013038187A (ja) * | 2011-08-05 | 2013-02-21 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP5956167B2 (ja) * | 2012-01-23 | 2016-07-27 | スタンレー電気株式会社 | 発光装置、車両用灯具及び発光装置の製造方法 |
-
2014
- 2014-03-26 JP JP2015512379A patent/JP6444299B2/ja active Active
- 2014-03-26 BR BR112015026316-0A patent/BR112015026316B1/pt active IP Right Grant
- 2014-03-26 US US14/785,027 patent/US9496465B2/en active Active
- 2014-03-26 WO PCT/JP2014/058530 patent/WO2014171277A1/ja active Application Filing
- 2014-03-26 MX MX2015014349A patent/MX349884B/es active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
MX349884B (es) | 2017-08-17 |
US20160079486A1 (en) | 2016-03-17 |
WO2014171277A1 (ja) | 2014-10-23 |
BR112015026316B1 (pt) | 2022-01-11 |
JP6444299B2 (ja) | 2018-12-26 |
MX2015014349A (es) | 2016-06-07 |
JPWO2014171277A1 (ja) | 2017-02-23 |
US9496465B2 (en) | 2016-11-15 |
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Legal Events
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B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B350 | Update of information on the portal [chapter 15.35 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 26/03/2014, OBSERVADAS AS CONDICOES LEGAIS. |