BR112013016541A2 - interface aprimorada entre uma camada de material i-iii-vi2 e um substrato de molibdênio - Google Patents

interface aprimorada entre uma camada de material i-iii-vi2 e um substrato de molibdênio

Info

Publication number
BR112013016541A2
BR112013016541A2 BR112013016541A BR112013016541A BR112013016541A2 BR 112013016541 A2 BR112013016541 A2 BR 112013016541A2 BR 112013016541 A BR112013016541 A BR 112013016541A BR 112013016541 A BR112013016541 A BR 112013016541A BR 112013016541 A2 BR112013016541 A2 BR 112013016541A2
Authority
BR
Brazil
Prior art keywords
layer
iii
adaptation
material layer
molybdenum substrate
Prior art date
Application number
BR112013016541A
Other languages
English (en)
Inventor
Donna S Zupanski-Nielsen
Emmanuel Roche
Harikla Deligianni
Jesus Salvador Jaime Ferrer
Kathleen B Reuter
Lubomyr Romankiw
Maurice Mason
Pierre-Philippe Grand
Qiang Huang
Raman Vaidyanathan
Original Assignee
Nexcis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexcis filed Critical Nexcis
Publication of BR112013016541A2 publication Critical patent/BR112013016541A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

interface aprimorada entre uma camada de material i-iii-vi2 e um substrato de molibdênio a presente invenção refere-se a um método para a fabricação de camada fina feita de uma liga de i-iii-vi, e com propriedades fotovoltaicas. o método de acordo com a invenção compreende primeiro as etapas de: a) depositar uma camada de adaptação (mo) sobre um substrato (sub), b) depositar pelo menos uma camada (semente) que compreende, pelo menos, os elementos i e/ou iii, na dita camada de adaptação. a camada de adaptação é depositada sob condições próximas a vácuo, e a etapa b) compreende uma primeira operação de deposição de uma primeira camada dos elementos i e/ou iii, sob as mesmas condições que a deposição da camada de adaptação, sem expor a camada de adaptação ao ar.
BR112013016541A 2010-12-27 2011-12-20 interface aprimorada entre uma camada de material i-iii-vi2 e um substrato de molibdênio BR112013016541A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10306519A EP2469580A1 (en) 2010-12-27 2010-12-27 Improved interface between a I-III-VI2 material layer and a molybdenum substrate
PCT/EP2011/073401 WO2012089558A1 (en) 2010-12-27 2011-12-20 Improved interface between a i-iii-vi2 material layer and a molybdenum substrate

Publications (1)

Publication Number Publication Date
BR112013016541A2 true BR112013016541A2 (pt) 2016-09-27

Family

ID=43899614

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013016541A BR112013016541A2 (pt) 2010-12-27 2011-12-20 interface aprimorada entre uma camada de material i-iii-vi2 e um substrato de molibdênio

Country Status (11)

Country Link
US (1) US20130269780A1 (pt)
EP (2) EP2469580A1 (pt)
JP (1) JP2014502592A (pt)
KR (1) KR20140031190A (pt)
CN (1) CN103460337B (pt)
AU (1) AU2011351600B2 (pt)
BR (1) BR112013016541A2 (pt)
MA (1) MA34759B1 (pt)
TN (1) TN2013000258A1 (pt)
WO (1) WO2012089558A1 (pt)
ZA (1) ZA201304566B (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9246025B2 (en) 2012-04-25 2016-01-26 Guardian Industries Corp. Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
US9419151B2 (en) 2012-04-25 2016-08-16 Guardian Industries Corp. High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells
US9935211B2 (en) 2012-04-25 2018-04-03 Guardian Glass, LLC Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
US8809674B2 (en) 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
KR101389832B1 (ko) * 2012-11-09 2014-04-30 한국과학기술연구원 구리인듐셀레늄（ｃｉｇｓ） 또는 구리아연주석황（ｃｚｔｓ）계 박막형 태양전지 및 그의 제조방법
FR3028668B1 (fr) * 2014-11-13 2016-12-30 Nexcis Procede de fabrication d'une cellule photovoltaique
US10128237B2 (en) 2016-06-24 2018-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of gate replacement in semiconductor devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480025A (en) * 1987-09-21 1989-03-24 Hitachi Ltd Apparatus for manufacturing semiconductor
JPH0877544A (ja) * 1994-06-30 1996-03-22 Fuji Electric Co Ltd 磁気記録媒体及びその製造方法
JPH0936408A (ja) * 1995-07-25 1997-02-07 Yazaki Corp 薄膜太陽電池の製造方法及びインジウム−セレン合金の製造方法
JP3804881B2 (ja) * 1996-04-29 2006-08-02 株式会社半導体エネルギー研究所 半導体装置の作製装置および半導体装置の作製方法
US20020189665A1 (en) * 2000-04-10 2002-12-19 Davis, Joseph & Negley Preparation of CIGS-based solar cells using a buffered electrodeposition bath
CN1151560C (zh) * 2002-03-08 2004-05-26 清华大学 一种铜铟镓硒薄膜太阳能电池及其制备方法
FR2849532B1 (fr) * 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
JP4676771B2 (ja) * 2004-05-20 2011-04-27 新光電気工業株式会社 化合物半導体太陽電池の製造方法
US7319190B2 (en) * 2004-11-10 2008-01-15 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in CIGS
WO2009076322A2 (en) * 2007-12-06 2009-06-18 Craig Leidholm Methods and devices for processing a precursor layer in a group via environment
DE102009011496A1 (de) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung
US20100255660A1 (en) * 2009-04-07 2010-10-07 Applied Materials, Inc. Sulfurization or selenization in molten (liquid) state for the photovoltaic applications
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WO2011028957A2 (en) * 2009-09-02 2011-03-10 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
CN101771105A (zh) * 2009-12-01 2010-07-07 郭玉钦 连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法

Also Published As

Publication number Publication date
JP2014502592A (ja) 2014-02-03
WO2012089558A1 (en) 2012-07-05
KR20140031190A (ko) 2014-03-12
AU2011351600B2 (en) 2015-09-17
EP2469580A1 (en) 2012-06-27
AU2011351600A1 (en) 2013-07-04
MA34759B1 (fr) 2013-12-03
EP2666184A1 (en) 2013-11-27
US20130269780A1 (en) 2013-10-17
ZA201304566B (en) 2014-09-25
CN103460337A (zh) 2013-12-18
TN2013000258A1 (en) 2014-11-10
EP2666184B1 (en) 2021-01-06
CN103460337B (zh) 2016-09-14

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO ARQUIVAMENTO PUBLICADO NA RPI 2495 DE 30/10/2018.